Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1: M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.

Abstract: The present disclosure provides a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method for manufacturing a semiconductor device includes providing a first layer having a first surface, and forming a second layer on the first layer such that a portion of the first surface is not covered by the second layer. The second layer has a second surface that meets the first surface. An inhibitor layer is formed on the first surface and the second surface, and the inhibitor layer on the second surface is selectively removed to expose the second surface. An interest layer is formed on the second surface. Physical properties of the first layer are different from physical properties of the second layer.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: A composition comprising acetylene fluid at least partially solubilized in an improved solvent is described. The improved solvents exhibit non-toxicity and are further characterized by low vapor pressures to minimize solvent carryover during delivery of the acetylene fluid, while retaining suitable acetylene solubilizing capacity.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: A method of forming an oxide layer, the method including forming a first material layer on a semiconductor substrate, the first material layer including a polysiloxane material, wherein, from among Si—H1, Si—H2, and Si—H3 bonds included in the polysiloxane material, a percentage of Si—H2 bonds ranges from about 40% to about 90%, performing a first annealing process on the first material layer in an inert atmosphere, and performing a second annealing process on the first material layer in an oxidative atmosphere.

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.