Abstract: A touch pad input device includes a touch pad having a touch area formed on an upper surface thereof; a switch installed under the touch pad to generate a signal when a downward external force more than a reference value is applied; a restoring means configured to support elastically upward a lower surface of the touch pad; and a housing in which the touch pad, the switch and the restoring means are installed. Even when only one switch is installed under the touch pad, the switch can be stably operated when each area of the touch pad is pushed, and since the separate printed circuit board for transmitting the pushing signal of the switch is omitted, it is possible to provide a simple internal structure and to reduce a manufacturing cost, and all functions of a mouse and an arrow key can be performed.

Abstract: A sliding-type signal input device, according to the present invention, includes: a housing having an inner space with an opened upper side; a slide button mounted in the inner space; a flexible printed circuit board which is coupled to enclose an inner wall of the inner space and/or an outer sidewall of the slide button, and which is provided with two or more terminal switches; and a conductor which is arranged to enclose the other one from among the inner wall of the inner space and the outer sidewall of the slide button, and which comes in contact with the terminal switches when the slide button is moved in a lateral direction so as to connect the terminal switches.

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Abstract: A signal input device, according to one embodiment of the present invention, comprises: a base member including a bottom surface and a protruding part upwardly protruding from the bottom surface; a push button located on the upper side of the protruding part, and having a downward sidewall formed so as to cover the protruding part; a sensor unit provided on any one of an outer side surface of the protruding part or an inner side surface of the downward sidewall; and a contact point provided on the side, on which the sensor unit is not provided, of the outer side surface of the protruding part or on the inner side surface of the downward sidewall, wherein when the push button moves in a lateral direction, the sensor and the contact point come into contact with each other so as to generate a signal.

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Abstract: A semiconductor device having a capacitor includes a substrate which has a transistor, a first insulating pattern which is formed on the substrate and does not overlap a first contact node formed in the substrate, a second insulating pattern which is formed on the substrate, does not overlap a second contact node formed in the substrate, and is separated from the first insulating pattern, a first lower electrode which is formed on part of the substrate and sidewalls of the first insulating pattern, a second lower electrode which is formed on part of the substrate and sidewalls of the second insulating pattern, a dielectric layer pattern which is formed on the first lower electrode and the second lower electrode, and an upper electrode which is formed on the dielectric layer pattern. Related fabrication methods are also discussed.

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

Abstract: A photoresist composition comprises a photosensitive resin including a blend of a photoresist polymer and a dye resin, a photo-acid generator, and a solvent, in which an amount of the dye resin is in a range from about 20 weight percent to about 80 weight percent based on a total weight of the photosensitive resin.

Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.

Abstract: A semiconductor device having a capacitor includes a substrate which has a transistor, a first insulating pattern which is formed on the substrate and does not overlap a first contact node formed in the substrate, a second insulating pattern which is formed on the substrate, does not overlap a second contact node formed in the substrate, and is separated from the first insulating pattern, a first lower electrode which is formed on part of the substrate and sidewalls of the first insulating pattern, a second lower electrode which is formed on part of the substrate and sidewalls of the second insulating pattern, a dielectric layer pattern which is formed on the first lower electrode and the second lower electrode, and an upper electrode which is formed on the dielectric layer pattern. Related fabrication methods are also discussed.

Abstract: Provided are methods for changing a display range in an electronic device having a touchscreen. The method for changing a display range in an electronic device includes: detecting a plurality of touches; determining a plurality of regions in consideration of a plurality of touch points; and changing a display range of at least one region of the plurality of regions in consideration of change in a distance between the plurality of touch points.

Abstract: Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Abstract: A coil component includes a body part containing a magnetic material, a coil part disposed in the body part, and an electrode part disposed on the body part. The coil part includes a support member, a first coil layer disposed on at least one surface of the support member, a first insulating layer stacked on at least one surface of the support member and covering the first coil layer, and a second coil layer disposed on the first insulating layer. The first and second coil layers are electrically connected to each other, and the second coil layer has a larger number of coil turns than the first coil layer. Additionally or alternatively, a conductor of the first coil layer has an aspect ratio less than 1. Methods of manufacturing such coil components are also provided.

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.