Patents by Inventor Young-Ahn Leem
Young-Ahn Leem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10852617Abstract: A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 ?m and no greater than about 30 ?m.Type: GrantFiled: March 7, 2019Date of Patent: December 1, 2020Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee Kwon, Kisoo Kim, Sung Bock Kim, Young Ahn Leem
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Publication number: 20190278151Abstract: A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 ?m and no greater than about 30 ?m.Type: ApplicationFiled: March 7, 2019Publication date: September 12, 2019Inventors: Oh Kee KWON, Kisoo KIM, Sung Bock KIM, Young Ahn LEEM
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Patent number: 9927484Abstract: Provided herein is a radio frequency probe apparatus including a RF waveguide including a ground electrode and a signal electrode, a register connected to the signal electrode, a RF connector including an outer conductor connected to the ground electrode, an inner conductor connected to the signal electrode, and a dielectric body filling a portion between the outer conductor and the inner conductor, and a single tip probe connected to the signal electrode of the RF waveguide, or the register.Type: GrantFiled: June 27, 2016Date of Patent: March 27, 2018Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee Kwon, Young Tak Han, Ki Soo Kim, Su Hwan Oh, Chul Wook Lee, Young Ahn Leem
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Publication number: 20170023635Abstract: Provided herein is a radio frequency probe apparatus including a RF waveguide including a ground electrode and a signal electrode, a register connected to the signal electrode, a RF connector including an outer conductor connected to the ground electrode, an inner conductor connected to the signal electrode, and a dielectric body filling a portion between the outer conductor and the inner conductor, and a single tip probe connected to the signal electrode of the RF waveguide, or the register.Type: ApplicationFiled: June 27, 2016Publication date: January 26, 2017Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee KWON, Young Tak HAN, Ki Soo KIM, Su Hwan OH, Chul Wook LEE, Young Ahn LEEM
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Publication number: 20160013621Abstract: Provided is a method of manufacturing a distributed feedback laser diode array (DFB-LDA) including: forming active layers corresponding to a plurality of channels using electron beam lithography; forming a plurality of mask patterns between the active layers; and growing the active layers using electron beam lithography, wherein the opening widths of the plurality of mask patterns corresponding to the plurality of channels are different from one another.Type: ApplicationFiled: January 29, 2015Publication date: January 14, 2016Applicant: Electronics and Telecommunications Research InstituteInventors: Young Ahn LEEM, Kisoo KIM, Oh Kee KWON, Young-Tak Han
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Patent number: 9036969Abstract: Provided are a spot size converter and a method of manufacturing the spot size converter. The method includes stacking a lower clad layer, a core layer, and a first upper clad layer on a substrate, tapering the first upper clad layer and the core layer in a first direction on a side of the substrate, forming a waveguide layer on the first upper clad layer and the lower clad layer, and etching the waveguide layer, the first upper clad layer, the core layer, and the lower clad layer such that the waveguide layer is wider than a tapered portion of the core layer on the side of the substrate and has the same width as that of the core layer on another side of the substrate.Type: GrantFiled: September 14, 2012Date of Patent: May 19, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee Kwon, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem, Young-Tak Han, Yongsoon Baek, Yun C. Chung
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Publication number: 20150110144Abstract: A distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.Type: ApplicationFiled: December 15, 2014Publication date: April 23, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Oh Kee KWON, Su Hwan OH, Young Ahn LEEM, O-Kyun KWON, Young-Tak HAN, Yongsoon BAEK, Yun C. CHUNG
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Patent number: 8937980Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.Type: GrantFiled: September 13, 2012Date of Patent: January 20, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Oh Kee Kwon, Su Hwan Oh, Young Ahn Leem, O-Kyun Kwon, Young-Tak Han, Yongsoon Baek, Yun C. Chung
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Publication number: 20140334512Abstract: Provided is a distributed feedback-laser diode (DFB-LD) and manufacturing method thereof. The DFB-LD includes a substrate; a lower clad layer having a grating on the substrate; an active waveguide extended in a first direction on the lower clad layer; an upper clad layer on the active waveguide; a signal pad on the upper clad layer; and at least one ground pad spaced apart from the active waveguide, the upper clad layer, and the signal pad in a second direction crossing the first direction, the at least one ground pad being coupled to the lower clad layer.Type: ApplicationFiled: March 5, 2014Publication date: November 13, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Oh Kee KWON, Young-Tak HAN, Chul-Wook LEE, Young Ahn LEEM
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Patent number: 8853633Abstract: Provided are a THz-wave generation/detection module and a device including the same, which increase heating efficiency and are miniaturized. The module includes a photomixer chip, a lens, a PCB, and a package. The photomixer chip includes an active layer, an antenna, and a plurality of electrode pads. The lens is disposed on the photomixer chip. The PCB includes a plurality of solder balls connected to the electrode pads, under the photomixer chip. The package surrounds a bottom and side of the PCB, and dissipates heating of the active layer, which is transferred from the electrode pad of the photomixer chip to the PCB, to outside.Type: GrantFiled: December 2, 2011Date of Patent: October 7, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Sang-Pil Han, Kyung Hyun Park, Hyunsung Ko, Namje Kim, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem
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Patent number: 8837537Abstract: A high-efficiency laser diode is provided. Since a ?/4 phase-shifted distributed feedback (DFB) laser diode has a great coupling coefficient, mode stability is poor due to spatial hole burning when multiplication of the coupling coefficient by length of a resonator is equal to or greater than 2. In the inventive concept, a region capable of controlling spatial hole burning is inserted into a semiconductor laser diode structure. Thus, an ultrahigh-speed pulse laser diode having a repetition rate in the band ranging from 100 GHz to 300 GHz is obtained. In addition, a single-mode laser diode with improved energy use efficiency is implemented by changing the configuration of a laser diode.Type: GrantFiled: September 13, 2012Date of Patent: September 16, 2014Assignee: Electronics and Telecommunications Research InstituteInventor: Young Ahn Leem
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Patent number: 8774243Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.Type: GrantFiled: February 8, 2011Date of Patent: July 8, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Namje Kim, Kyung Hyun Park, Young Ahn Leem, Chul-Wook Lee, Sang-Pil Han, Dong-Hun Lee, Min Yong Jeon
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Patent number: 8644714Abstract: Provided is a multi-wavelength optical source generator. The multi-wavelength optical source generator includes: a gain part generating a plurality of lights through a plurality of gain waveguides; a reflective part transmitting or reflecting lights provided from each of the plurality of gain waveguides according to a wavelength; and a multiplexing part multiplexing a plurality of lights transmitted and outputted through the reflective part.Type: GrantFiled: December 14, 2011Date of Patent: February 4, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Oh-Kee Kwon, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem, Yongsoon Baek
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Patent number: 8599893Abstract: Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light.Type: GrantFiled: September 6, 2011Date of Patent: December 3, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Namje Kim, Kyung Hyun Park, Young Ahn Leem, Hyunsung Ko, Sang-Pil Han, Chul-Wook Lee, Dong-Hun Lee
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Publication number: 20130287054Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.Type: ApplicationFiled: September 13, 2012Publication date: October 31, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee KWON, Su Hwan Oh, Young Ahn Leem, O-Kyun Kwon, Young-Tak Han, Yongsoon Baek, Yun C. Chung
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Publication number: 20130266263Abstract: Provided are a spot size converter and a method of manufacturing the spot size converter. The method includes stacking a lower clad layer, a core layer, and a first upper clad layer on a substrate, tapering the first upper clad layer and the core layer in a first direction on a side of the substrate, forming a waveguide layer on the first upper clad layer and the lower clad layer, and etching the waveguide layer, the first upper clad layer, the core layer, and the lower clad layer such that the waveguide layer is wider than a tapered portion of the core layer on the side of the substrate and has the same width as that of the core layer on another side of the substrate.Type: ApplicationFiled: September 14, 2012Publication date: October 10, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee KWON, Chul-Wook LEE, Dong-Hun LEE, Young Ahn LEEM, Young-Tak HAN, Yongsoon BAEK, Yun C. CHUNG
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Publication number: 20130148975Abstract: Provided is a multichannel transmitter optical module which includes a plurality of light source units configured to generate light, a plurality of an electro-absorption modulators (EAMs) configured to modulate the generated light to an optical signal through a radio frequency (RF) signal, a plurality of RF transmission lines configured to apply the RF signal to the EAMs, and a combiner configured to combine the modulated optical signal. The RF transmission lines are connected to the EAMs in a traveling wave (TW) electrode manner. The multichannel transmitter optical module has alleviated crosstalk and is compactly integrated to have a small size.Type: ApplicationFiled: August 14, 2012Publication date: June 13, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee KWON, Young-Tak Han, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem, Jang Uk Shin, Sang Ho Park, Yun C. Chung, Yongsoon Baek
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Publication number: 20130148675Abstract: A high-efficiency laser diode is provided. Since a ?/4 phase-shifted distributed feedback (DFB) laser diode has a great coupling coefficient, mode stability is poor due to spatial hole burning when multiplication of the coupling coefficient by length of a resonator is equal to or greater than 2. In the inventive concept, a region capable of controlling spatial hole burning is inserted into a semiconductor laser diode structure. Thus, an ultrahigh-speed pulse laser diode having a repetition rate in the band ranging from 100 GHz to 300 GHz is obtained. In addition, a single-mode laser diode with improved energy use efficiency is implemented by changing the configuration of a laser diode.Type: ApplicationFiled: September 13, 2012Publication date: June 13, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventor: Young Ahn LEEM
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Publication number: 20130003771Abstract: Provided are a distributed feedback laser diode and a manufacturing method thereof. The distributed feedback laser diode includes a first area having a first grating layer disposed in a longitudinal direction, a second area disposed adjacent to the first area and having a second grating layer disposed in the longitudinal direction, and an active layer disposed over the first and second areas. Coupling coefficients of the first and second grating layers are made different in the first and second areas by a selective area growth method. The distributed feedback laser diode includes grating layers each having an asymmetric coefficient and is implemented within an optimal range capable of obtaining both a high front facet output and stable single mode characteristics. Thus, high manufacturing yield and low manufacturing cost can be achieved.Type: ApplicationFiled: May 29, 2012Publication date: January 3, 2013Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh Kee KWON, Young Ahn Leem, Dong-Hun Lee, Chul-Wook Lee, Yongsoon Baek, Yun C. Chung
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Patent number: 8346026Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.Type: GrantFiled: August 7, 2007Date of Patent: January 1, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Jeong-Woo Park, Gyungock Kim, Young-Ahn Leem, Hyun-Soo Kim, Bongki Mheen