Patents by Inventor Young-gu Jin

Young-gu Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200029047
    Abstract: A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor includes at least two first photogates symmetrically arranged in a central portion of a pixel, at least two first gates configured to remove an overflow charge generated in the at least two first photogates, and a first gate group. The at least two first gates are arranged symmetrically in an outer portion of the pixel. The first gate group includes a plurality of gates configured to store and transmit charges generated in the at least two first photogates. The first gate group is arranged in the outer portion of the pixel.
    Type: Application
    Filed: March 4, 2019
    Publication date: January 23, 2020
    Inventors: YOUNG-GU JIN, YOUNG-CHAN KIM, SUNG-HO CHOI
  • Publication number: 20200013811
    Abstract: An image sensor includes unit pixels, and from among the unit pixels, a first unit pixel and a second unit pixel that are adjacent to each other each include a first tap having a first photo gate, to which a first signal having a first phase difference with respect to an optical signal is applied, and a second tap having a second photo gate, to which a second signal having a second phase difference with respect to the optical signal is applied. A location of the first tap in the first unit pixel and a location of the first tap in the second unit pixel, and a location of the second tap in the first unit pixel and a location of the second tap in the second unit pixel are symmetrical with each other based on one point between the first unit pixel and the second unit pixel.
    Type: Application
    Filed: January 31, 2019
    Publication date: January 9, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-gu JIN, Young-chan Kim, Tae-sub Jung
  • Patent number: 10529755
    Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: January 7, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Yon Lee, Gwi Deok Lee, Masaru Ishii, Young Gu Jin
  • Publication number: 20190296070
    Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.
    Type: Application
    Filed: November 30, 2018
    Publication date: September 26, 2019
    Inventors: Young Gu JIN, Young Chan KIM, Min-Sun KEEL
  • Publication number: 20190280038
    Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.
    Type: Application
    Filed: September 7, 2018
    Publication date: September 12, 2019
    Inventors: MIN-SUN KEEL, DOO WON KWON, HYUN SURK Ryu, YOUNG CHAN KIM, YOUNG GU JIN
  • Patent number: 10388682
    Abstract: The image sensor includes: a semiconductor substrate having a first conductivity type and including a first surface, a second surface opposite to the first surface, and a well region adjacent to the first surface. A first vertical transfer gate and a second vertical transfer gate are spaced apart from each other and extend in a thickness direction of the semiconductor substrate from the first surface to pass through at least a part of the well region. A photoelectric conversion region has a second conductivity type, which is different from the first conductivity type, is located in the semiconductor substrate between the well region and the second surface, and overlaps the first vertical transfer gate and the second vertical transfer gate in the thickness direction of the semiconductor substrate. A wiring structure is located on the first surface of the semiconductor substrate.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: August 20, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Young-Gu Jin
  • Publication number: 20190208150
    Abstract: A pixel array in a three-dimensional image sensor includes depth pixels and an ambient light cancellation (ALC) circuit. The depth pixels operate in response to photo control signals having different phases, and generate distance information of an object based on light reflected by the object. The ALC circuit removes an ambient light component from the reflected light, and is shared by the depth pixels. Each depth pixel includes a photoelectric conversion region, a floating diffusion region, a photo gate, and a drain gate. The photoelectric conversion region collects photo charges based on the reflected light. The floating diffusion region accumulates the photo charges. The photo gate is activated in response to one of the photo control signals. The photoelectric conversion region accumulates the photo charges when the photo gate is activated, and the photo charges in the photoelectric conversion region are released when the drain gate is activated.
    Type: Application
    Filed: October 26, 2018
    Publication date: July 4, 2019
    Inventors: YOUNG-GU JIN, MIN-SUN KEEL, YOUNG-CHAN KIM
  • Publication number: 20190189671
    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young Gu JIN, Doo Won KWON
  • Publication number: 20190189672
    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young Gu JIN, Doo Won KWON
  • Patent number: 10283554
    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: May 7, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Gu Jin, Doo Won Kwon
  • Patent number: 10212367
    Abstract: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: February 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee Lee, Young Gu Jin, Yong Wan Jin
  • Patent number: 10186045
    Abstract: A method of recognizing motion of an object may include periodically obtaining depth data of a first resolution and two-dimensional data of a second resolution with respect to a scene using an image capturing device, wherein the second resolution is higher than the first resolution; determining a motion tracking region by recognizing a target object in the scene based on the depth data, such that the motion tracking region corresponds to a portion of a frame and the portion includes the target object; periodically obtaining tracking region data of the second resolution corresponding to the motion tracking region; and/or analyzing the motion of the target object based on the tracking region data.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: January 22, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Gu Jin, Jung-Seop Kim, Dong-Wook Kwon, Kyung-Il Kim, Min-Ho Kim, Gi-Sang Lee, Sang-Bo Lee, Jin-Kyung Lee, Jin-Wuk Choi
  • Patent number: 10171790
    Abstract: An image capture method performed by a depth sensor includes; emitting a first source signal having a first amplitude towards a scene, and thereafter emitting a second source signal having a second amplitude different from the first amplitude towards the scene, capturing a first image in response to the first source signal and capturing a second image in response to the second source signal, and interpolating the first and second images to generate a final image.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: January 1, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Il Kim, Dong Wook Kwon, Min Ho Kim, Gi Sang Lee, Sang Bo Lee, Jin Kyung Lee, Young Gu Jin, Jin Wuk Choi
  • Publication number: 20180366504
    Abstract: The image sensor includes: a semiconductor substrate having a first conductivity type and including a first surface, a second surface opposite to the first surface, and a well region adjacent to the first surface. A first vertical transfer gate and a second vertical transfer gate are spaced apart from each other and extend in a thickness direction of the semiconductor substrate from the first surface to pass through at least a part of the well region. A photoelectric conversion region has a second conductivity type, which is different from the first conductivity type, is located in the semiconductor substrate between the well region and the second surface, and overlaps the first vertical transfer gate and the second vertical transfer gate in the thickness direction of the semiconductor substrate. A wiring structure is located on the first surface of the semiconductor substrate.
    Type: Application
    Filed: January 15, 2018
    Publication date: December 20, 2018
    Inventor: YOUNG-GU JIN
  • Patent number: 10101874
    Abstract: A method for controlling a user interface of an apparatus to enable intuitive manipulation for an object included in an image is provided. An object with deeper depth in a rear image of the apparatus may become selectable when the user holds a user input means close to the apparatus, while an object with shallower depth in the rear image may become selectable when the user draws the user input means away from the apparatus, thereby allowing the user to intuitively select an object in the rear image.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: October 16, 2018
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Dong-Wook Kwon, Min-Ho Kim, Kyung-Il Kim, Gi-Sang Lee, Sang-Bo Lee, Jin-Kyung Lee, Young-Gu Jin, Jin-Wuk Choi
  • Publication number: 20180190699
    Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.
    Type: Application
    Filed: September 14, 2017
    Publication date: July 5, 2018
    Inventors: TAE YON LEE, GWI DEOK LEE, MASARU ISHll, YOUNG GU JIN
  • Publication number: 20180069046
    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.
    Type: Application
    Filed: March 6, 2017
    Publication date: March 8, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young Gu JIN, Doo Won Kwon
  • Patent number: 9894301
    Abstract: ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: February 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Gu Jin, Min Ho Kim, Tae Chan Kim, Dong Ki Min, Sang Chul Sul, Tae Seok Oh, Kwang Hyun Lee, Tae Yon Lee, Ju Hwan Jung
  • Publication number: 20180013961
    Abstract: An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.
    Type: Application
    Filed: February 17, 2017
    Publication date: January 11, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwang Hee Lee, Young Gu JIN, Yong Wan JIN
  • Publication number: 20170372486
    Abstract: A method of recognizing motion of an object may include periodically obtaining depth data of a first resolution and two-dimensional data of a second resolution with respect to a scene using an image capturing device, wherein the second resolution is higher than the first resolution; determining a motion tracking region by recognizing a target object in the scene based on the depth data, such that the motion tracking region corresponds to a portion of a frame and the portion includes the target object; periodically obtaining tracking region data of the second resolution corresponding to the motion tracking region; and/or analyzing the motion of the target object based on the tracking region data.
    Type: Application
    Filed: June 29, 2017
    Publication date: December 28, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-Gu JIN, Jung-Seop KIM, Dong-Wook KWON, Kyung-II KIM, Min-Ho KIM, Gi-Sang LEE, Sang-Bo LEE, Jin-Kyung LEE, Jin-Wuk CHOI