Abstract: There is provide an image encoding method including transforming an image block into a first latent representation based on an invertible neural network, transforming the first latent representation into a second latent representation based on a non-invertible neural network, estimating a probability distribution of the first latent representation, and performing entropy encoding on the first latent representation based on the probability distribution by using an entropy encoder.

Abstract: The present invention relates to a brain-metastatic lung cancer cell line and a use of Noggin as a marker for brain metastasis of lung cancer. In the present invention, a brain metastatic lung cancer cell line with optimized characteristics for brain metastasis was established by repeatedly transplanting the lung cancer cell line through the carotid artery. In addition, in the brain metastatic lung cancer cell line, the expressions of Noggin protein and its mRNA are reduced, confirming that the motility and invasiveness of cells are reduced and adhesion increased. Therefore, the Noggin protein or its gene is expected to be useful as a biomarker for diagnosis of brain metastasis of lung cancer and its target therapy.

Abstract: Disclosed is a corner structure (100) of a liquefied gas storage tank, wherein the corner structure is installed at a corner of a storage tank for loading liquefied gas and supports sealing walls (51, 52) that prevent leakage of the liquefied gas. The corner structure (100) may include: two insulation members (110) arranged on the inner surface of a hull structure so as to be oriented in different directions; and mobile members (130) which are installed on the respective insulation members (110) and to which the sealing walls (51, 52) are joined. The mobile members (130) may be slidably coupled to the insulation members 110, and a plurality of the mobile members (130) may be arranged spaced apart from each other in a straight line on one of the insulation members.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: Provided are a pixel circuit and a display device having the pixel circuit. The pixel circuit includes an organic light emitting diode, a switching transistor, a storage capacitor, and a driving transistor. The switching transistor is turned off when a scan signal has a first voltage and turned on when the scan signal has a second voltage. The storage capacitor stores a data voltage when the switching transistor is turned on in response to the scan signal. The driving transistor is electrically connected with the organic light emitting diode between a high power supply voltage and a low power supply voltage to provide a driving current to the organic light emitting diode, and includes a first bottom gate electrode that is provided with the first voltage. The driving current corresponds to the data voltage stored in the storage capacitor.

Abstract: Provided is an adhesive composition including lysine, alpha ketoglutaric acid, and water, wherein the lysine and the alpha ketoglutaric acid are present in the form of an aqueous salt solution and do not form precipitates in the aqueous solution.

Abstract: An object of the present invention is to provide a material for organic EL elements, the material being excellent in hole injecting/transporting performance, electron-blocking capability, stability in the form of a thin film, and durability. Another object of the present invention is to provide an organic EL element having high efficiency, a low driving voltage, and a long lifespan, by combining the aforementioned material with various materials for organic EL elements, the materials being excellent in hole/electron injecting/transporting performance, electron-blocking capability, stability in the form of a thin film, and durability, such that the properties of the individual materials can be effectively exhibited.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor device includes a source structure, a bit line, a stacked structure between the source structure and the bit line, a source contact structure penetrating the stacked structure and electrically coupled to the source structure, and a protective pattern interposed between the source contact structure and the source structure and having a varying thickness depending on an area of the protective pattern.

Abstract: A semiconductor device includes a source structure, a bit line, a stacked structure between the source structure and the bit line, a source contact structure penetrating the stacked structure and electrically coupled to the source structure, and a protective pattern interposed between the source contact structure and the source structure and having a varying thickness depending on an area of the protective pattern.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Abstract: Disclosed herein is an experiment apparatus for estimating ground surface deformation during gas hydrate recovery. The experiment apparatus may include: a high-pressure cell having a space in which a sample containing gas hydrate is stored; a pressurizing member mounted to move in one direction in the high-pressure cell, and moved to pressurize the sample stored in the space, wherein the surface of the sample is observed along the longitudinal direction of the pressurizing member through the pressurizing member from outside; and a recovery member inserted into the sample so as to recover the gas hydrate contained in the sample to the outside.