Patents by Inventor Young-Joon Baik

Young-Joon Baik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10697073
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: June 30, 2020
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Young-Jin Ko, Young Joon Baik, Jong-Keuk Park, Kyeong Seok Lee, Inho Kim, Doo Seok Jeong
  • Publication number: 20200131920
    Abstract: According to the present invention, part of carbon dioxide heated by a heater is supplied to a dry gas seal portion of a compressor so that a device for pressurizing and heating a seal gas is not additionally required, configuration can be simplified and cost can be reduced. In addition, a seal gas flow path includes a low-temperature seal gas flow path and a high-temperature seal gas flow path so that, in an initial driving mode, carbon dioxide heated by a high-temperature portion of the heater is used as a seal gas and in a turbine-driving mode, carbon dioxide heated by a low-temperature portion of the heater is used as a seal gas and thus a more efficient operation can be performed.
    Type: Application
    Filed: June 26, 2019
    Publication date: April 30, 2020
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jun Hyun CHO, Bong Su CHOI, Ho Sang RA, Hyung Ki SHIN, Jong Jae CHO, Beom Joon LEE, Chul Woo ROH, Gil Bong LEE, Young Jin BAIK
  • Publication number: 20200095885
    Abstract: The present invention provides a partial admission operation turbine apparatus comprising: a rotor portion rotatably coupled to a rotary shaft of a turbine and including a plurality of rotor blades; a nozzle portion fixedly coupled to the rotary shaft in front of the rotor portion and guiding and supplying a working fluid to the rotor blades through a plurality of nozzle blades; and an inlet disk coupled to the rotary shaft in front of the nozzle portion in a plate shape and having a plurality of admission holes formed therein so as to supply the working fluid to the nozzle portion to partially admit the working fluid into the nozzle portion, wherein each of the admission holes is formed to have a different passage cross-sectional areas, so that the opening and closing of the admission holes are controlled according to operating flow rate conditions to control a partial admission ratio of the working fluid supplied to the nozzle portion.
    Type: Application
    Filed: November 1, 2017
    Publication date: March 26, 2020
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Hyung Ki SHIN, Jun Hyun CHO, Young Jin BAIK, Gil Bong LEE, Beom Joon LEE, Chul Woo ROH, Ho Sang RA, Jong Jae CHO
  • Patent number: 10561619
    Abstract: The present invention relates to a pharmaceutical composition comprising dutasteride and propylene glycol monolaurate, which improves the stability of dutasteride, which is a poorly soluble drug as a 5-alpha reductase inhibitor, and a process for its preparation. More particularly, the present invention also relates to a capsule formulation which is smaller in size than a commercial dutasteride capsule formulation (AVODART®), but has the equivalent dissolution rate by preparing a pharmaceutical composition comprising propylene glycol monolaurate and dutasteride, which can improve the stability of the dutasteride. A dutasteride formulation having enhanced patient's compliance and improved stability and a method for producing the same are provided.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: February 18, 2020
    Assignee: Yuyu Pharma, Inc.
    Inventors: Tae Gon Baik, Seyeon Kim, Kyeongjin Ahn, Ju-Hee Kim, Young-Joon Park
  • Patent number: 10533553
    Abstract: A single-stage compressor including one compressing unit, includes: a housing having a compressing chamber formed therein and including a suction port, which is located in one side of the compressing chamber and into which a working fluid enters, and an injection port, which is located on the compressing chamber to be spaced apart from the suction port by a predetermined distance and into which an intermediate-pressure working fluid is injected; and an intermediate-pressure valve installed on an intermediate-pressure fluid flow path on which the intermediate-pressure working fluid moves and configured to control supply of the intermediate-pressure working fluid so that the intermediate-pressure working fluid is supplied to the injection port in response to an intermediate pressure of the compressing chamber.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: January 14, 2020
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Gil Bong Lee, Young Soo Lee, Beom Joon Lee, Ho Sang Ra, Young Jin Baik, Jun Hyun Cho, Hyung Ki Shin
  • Publication number: 20190323704
    Abstract: In the present invention, a recuperator is used in a refrigerant cycle to make a heat exchange between a refrigerant generated in a condenser and a refrigerant before flowing into a compressor, thereby supercooling the refrigerant to minimize the quality of the refrigerant introduced into an evaporator, elevating temperatures at an inlet and an outlet of the compressor, and increasing condensed heat of the condenser. In the present invention, a recuperator is used to increase condensed heat of the condenser, leading to increasing the heat which circulation water circulating in a steam producing cycle receives from the condenser, whereby steam production efficiency can be improved.
    Type: Application
    Filed: November 1, 2017
    Publication date: October 24, 2019
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Beom Joon LEE, Gil Bong LEE, Young Jin BAIK, Hyung Ki SHIN, Jun Hyun CHO, Chul Woo ROH, Ho Sang RA, Eun Seok WANG, Young Soo LEE
  • Publication number: 20180038003
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Application
    Filed: May 30, 2017
    Publication date: February 8, 2018
    Inventors: Wook Seong LEE, Young-Jin KO, Young Joon BAIK, Jong-Keuk PARK, Kyeong Seok LEE, Inho KIM, Doo Seok JEONG
  • Publication number: 20160221156
    Abstract: A superhard boron carbide thin film with superior high temperature oxidation resistance has a structure in which a boron carbide layer and a silicon carbide layer are repeatedly stacked in an alternating manner. Accordingly, the high temperature oxidation resistance of the boron carbide thin film is enhanced, allowing the application as coating materials for wear resistant tools such as cutting tools.
    Type: Application
    Filed: December 16, 2015
    Publication date: August 4, 2016
    Applicant: Korea Institute of Science and Technology
    Inventors: Young Joon BAIK, Jong-Keuk PARK, Wook Seong LEE
  • Patent number: 9175387
    Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.
    Type: Grant
    Filed: January 21, 2013
    Date of Patent: November 3, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Hak Joo Lee, Young Joon Baik, Jong Keuk Park
  • Patent number: 9074281
    Abstract: Methods for fabricating uniform nanocrystalline diamond thin films with minimized voids are presented. These uniform nanocrystalline diamond thin films can be formed on any number of treated silicon oxide surfaces such as on hydrogen plasma treated surfaces of silicon oxide-coated substrates or on hydrocarbon plasma pre-treated surfaces of silicon oxide-coated substrates. It is believed that treating these surfaces results in maximizing electrostatic attraction between these treated surfaces with nanodiamond particles during a subsequent ultrasonic seeding of the nanodiamond particles onto these threated surfaces. This can result in the nanodiamond particles being substantially uniformly distributed and bound on the treated silicon oxide surface.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: July 7, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Hak Joo Lee, Young Joon Baik, Jong Keuk Park
  • Patent number: 8973526
    Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: March 10, 2015
    Assignee: Korea Institute of Science and Technology
    Inventors: Wook Seong Lee, Young Joon BaiK, Jong-Keuk Park, Gyu Weon Hwang, Jeung-hyun Jeong
  • Publication number: 20140326319
    Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).
    Type: Application
    Filed: July 16, 2013
    Publication date: November 6, 2014
    Inventors: Won Mok KIM, Jin-soo KIM, Jeung-hyun JEONG, Jong-Keuk PARK, Young Joon BAIK
  • Patent number: 8852406
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Jong Keuk Park, Wook Seong Lee
  • Publication number: 20140255286
    Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.
    Type: Application
    Filed: May 28, 2013
    Publication date: September 11, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Jong-Keuk PARK, Wook Seong LEE
  • Publication number: 20140004032
    Abstract: Provided are a method and an apparatus for rapid growth of a diamond capable of synthesizing a diamond having a large area and increasing a rate of synthesis of the diamond. The method for rapid growth of a diamond according to the present disclosure using a hot filament chemical vapor deposition (HFCVD) method includes: controlling a concentration of atomic hydrogen by controlling a flow rate of a precursor gas including hydrogen and hydrocarbon; and providing a solid phase carbon source which is etched by atomic hydrogen to increase a degree of supersaturation of a carbon source in a chamber of an HFCVD apparatus.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 2, 2014
    Inventors: Young Joon BAIK, Jong Keuk PARK, Wook Seong LEE
  • Publication number: 20130327387
    Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer (6) by controlling a structure of a lower transparent electrode layer (5?) in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell according to the present disclosure, the front transparent electrode layer comprises a lower transparent electrode layer (5?) and an upper transparent electrode layer (6), and the lower transparent electrode layer (5?) comprises an amorphous oxide-based thin film.
    Type: Application
    Filed: December 28, 2012
    Publication date: December 12, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Won Mok KIM, Jin Soo KIM, Jeung Hyun JEONG, Young Joon BAIK, Jong Keuk PARK
  • Publication number: 20130302592
    Abstract: A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH4, H2 and Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH4, H2 and Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH4, H2 and Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.
    Type: Application
    Filed: November 23, 2012
    Publication date: November 14, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong LEE, Hak Joo LEE, Young Joon BAIK, Jong Keuk PARK
  • Publication number: 20130295387
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Application
    Filed: January 18, 2013
    Publication date: November 7, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Jong Keuk PARK, Wook Seong LEE
  • Publication number: 20130260157
    Abstract: A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate.
    Type: Application
    Filed: March 13, 2013
    Publication date: October 3, 2013
    Inventors: Wook Seong LEE, Hak Joo LEE, Young Joon BAIK, Jong Keuk PARK
  • Publication number: 20130104972
    Abstract: Provided is a Se- or S-based thin film solar cell, including a substrate, a rear electrode formed on the substrate, a light absorbing layer formed on the rear electrode and containing at least one of selenium (Se) and sulfur (S), and an rear electrode top layer. The rear electrode top layer is formed between the rear electrode and the light absorbing layer, and contains a large amount of oxygen (O) to control diffusion of sodium (Na) through the rear electrode to the light absorbing layer. In this manner, it is possible to improve the electrical conductivity and interfacial adhesion of the rear electrode while stimulating diffusion of sodium (Na) to improve the efficiency of a thin film solar cell.
    Type: Application
    Filed: August 1, 2012
    Publication date: May 2, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jeung Hyun JEONG, Ju Heon YOON, Won Mok KIM, Young Joon BAIK, Jong Keuk PARK