Patents by Inventor Young-Joon Baik
Young-Joon Baik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100065892Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.Type: ApplicationFiled: October 23, 2008Publication date: March 18, 2010Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Gyuweon Hwang, Wook Seong Lee, Jeung-hyun Jeong, Jong-Keuk Park, Young Joon Baik
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Publication number: 20090324824Abstract: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.Type: ApplicationFiled: April 2, 2009Publication date: December 31, 2009Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Young Joon BAIK, Won Mok KIM, Kyeong Seok LEE, Jong-Keuk PARK, Jeung-hyun JEONG, Suyoun LEE, Taek Sung LEE
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Publication number: 20090127102Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.Type: ApplicationFiled: December 10, 2007Publication date: May 21, 2009Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Wook Seong LEE, Young Joon BaiK, Jong-Keuk Park, Gyu Weon Hwang, Jeung-hyun Jeong
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Publication number: 20090074986Abstract: The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.Type: ApplicationFiled: October 31, 2007Publication date: March 19, 2009Applicant: Korea Institute of Science and TechnologyInventors: Heqing Li, Wook Seong Lee, Young Joon Baik, Jong-Keuk Park
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Publication number: 20080280135Abstract: Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.Type: ApplicationFiled: August 3, 2007Publication date: November 13, 2008Inventors: Wook-Seong Lee, Young-Joon Baik, Jeung-Hyun Jeong, Ki-Woong Chae
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Patent number: 6907841Abstract: Disclosed are an apparatus and a method to synthesize powders typed diamond with the size between several tens nm to several ?m in diameter using conventional CVD processes for deposition of diamond films. Gas phase nucleation has been induced on the boundary of plasmas, and as a result the spherical diamond powders accumulated have been obtained on circumferences of the normal substrate. With a modification of a substrate structure, a large area accumulation of the diamond powders of around 100 mm in diameter has been accomplished.Type: GrantFiled: December 27, 2002Date of Patent: June 21, 2005Assignee: Korea Institute of Science and TechnologyInventors: Jae-Kap Lee, Young-Joon Baik, Kwang yong Eun
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Patent number: 6786176Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.Type: GrantFiled: April 15, 2002Date of Patent: September 7, 2004Assignee: Korea Institute of Science and TechnologyInventors: Wook-Seong Lee, Young Joon Baik, Kwang Yong Eun
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Publication number: 20040123801Abstract: Disclosed are an apparatus and a method to synthesize powders typed diamond with the size between several tens nm to several &mgr;m in diameter using conventional CVD processes for deposition of diamond films. Gas phase nucleation has been induced on the boundary of plasmas, and as a result the spherical diamond powders accumulated have been obtained on circumferences of the normal substrate. With a modification of a substrate structure, a large area accumulation of the diamond powders of around 100 mm in diameter has been accomplished.Type: ApplicationFiled: December 27, 2002Publication date: July 1, 2004Applicant: Korea Institute of Science and TechnologyInventors: Jae-Kap Lee, Young-Joon Baik, Kwang yong Eun
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Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby
Patent number: 6652762Abstract: A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.Type: GrantFiled: October 5, 1999Date of Patent: November 25, 2003Assignee: Korea Institute of Science and TechnologyInventors: Young Joon Baik, Eun Song Baik, Dong Ryul Jeon -
METHOD FOR FABRICATING NANO-SIZED DIAMOND WHISKER, AND NANO-SIZED DIAMOND WHISKER FABRICATED THEREBY
Publication number: 20030052080Abstract: A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.Type: ApplicationFiled: October 5, 1999Publication date: March 20, 2003Inventors: YOUNG JOON BAIK, EUN SONG BAIK, DONG RYUL JEON -
Patent number: 6443092Abstract: The present invention relates to a diamond film synthesizing apparatus, and in particular to an apparatus for increasing the deposition area to several inches in diameter by using multiple cathodes (Multi-cathode DC PACVD). In the multi-cathode DC PACVD apparatus according to the present invention, the basic array of the cathodes is determined so that the uniformity of diamond films on a deposition area is maximized. A seven-cathode structure, in which six cathodes are radially arranged at the same distance of 43 mm surrounding one central cathode, in which a basic unit of the array is regular triangle, is designed for depositing uniform diamond films on a 4″ substrate. Here, the shape of six edge cathodes is rod of which the lateral face is joined to the connecting rod, so that non-uniformity of temperature in the edge cathode is minimized and then the reliability of the apparatus is much enhanced.Type: GrantFiled: May 2, 2000Date of Patent: September 3, 2002Assignee: Korea Institute of Science and TechnologyInventors: Jae-Kap Lee, Young Joon Baik, Kwang Yong Eun
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Publication number: 20020110648Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.Type: ApplicationFiled: April 15, 2002Publication date: August 15, 2002Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Wook-Seong Lee, Young Joon Baik, Kwang Yong Eun
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Publication number: 20020081433Abstract: In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.Type: ApplicationFiled: November 5, 2001Publication date: June 27, 2002Inventors: Young Joon Baik, Wook-Seong Lee, Kwang Yong Eun, Ki Woong Chae
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Patent number: 6399151Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.Type: GrantFiled: October 27, 1999Date of Patent: June 4, 2002Assignee: Korea Institute of Science and TechnologyInventors: Wook-Seong Lee, Young Joon Baik, Kwang Yong Eun
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Patent number: 6379568Abstract: A diamond field emitter and a fabrication method thereof, in which a pretreatment is performed on a surface of an Si substrate in order that diamond nuclei are uniformly formed on the Si substrate during a diamond deposition, an oxide film such as an SiO2 film is deposited on the pretreated surface of the Si substrate and removed after an etching process so that diamond powder can be selectively remained during the etching process, thus the effect of the surface pretreatment of the Si substrate remains in the selected portion during the etching process, and it is also possible to uniformly deposit the diamond in said portion. According to the present invention, the diamond field emitter having excellent and uniform field emission characteristic can be manufactured because the field emission is easily achieved at a tip shaped field emission section, and, moreover, the diamond placed on an upper end portion of the tip increases electron emission effect.Type: GrantFiled: May 15, 2000Date of Patent: April 30, 2002Assignee: Korea Institute of Science and TechnologyInventors: Young-Joon Baik, Joo-Yong Lee, Dong-Ryul Jeon
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Patent number: 6365230Abstract: In order to provide an excellent toughness and a sufficient adhesive force without any limit in the content of other carbides in the substrate material and Co and in the size of the cemented carbides grains, the present invention provides a diamond film coated cutting tool, comprising a surface layer which cemented carbide grains are grown abnormally on the cemented carbide substrate, and a diamond film formed on the surface layer, and also a method for manufacturing a diamond film coated cutting tool, comprising the steps of heat-treating a surface of a cemented carbide substrate under a decarburizing atmosphere until the surface changes to a &eegr; phase, heat-treating the surface-decarburized cemented carbide substrate under a carburized atmosphere, depositing a diamond film on the carburized surface of the cemented carbide substrate.Type: GrantFiled: December 10, 1999Date of Patent: April 2, 2002Assignee: Korea Institute of Science and TechnologyInventors: Young Joon Baik, Wook-Seong Lee, Kwang Yong Eun, Ki Woong Chae
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Publication number: 20010053422Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.Type: ApplicationFiled: October 27, 1999Publication date: December 20, 2001Inventors: WOOK-SEONG LEE, YOUNG JOON BAIK, KWANG YONG EUN
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Patent number: 6319439Abstract: A method of synthesizing an even free-standing diamond film without growth cracks is disclosed. The intrinsic tensile stress of a diamond film is compensated by an artificial compressive stress with a step down control of the deposition temperature during deposition. After a diamond film is deposited with a predetermined thickness at a deposition temperature, the deposition temperature is decreased in multiple steps during the deposition. The bending of the diamond wafer is minimized by using a tungsten substrate with higher elastic modulus than molybdenum.Type: GrantFiled: February 25, 2000Date of Patent: November 20, 2001Assignee: Korea Institute of Science and TechnologyInventors: Jae-Kap Lee, Young Joon Baik, Kwang Yong Eun
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Publication number: 20010003377Abstract: A heat sink for a semiconductor device comprises a tungsten-copper composite body and a diamond film coated on the surface of the body. A method for fabricating a heat sink for a semiconductor comprises the steps of fabricating a tungsten-copper composite heat sink, modifying a surface of the heat sink by selectively dissolving copper from the surface of the heat sink, carrying out a process for supplying nuclei for growth of a diamond film on the modified surface of the heat sink, and coating the thusly processed surface of the heat sink with a diamond film. Preferably, a process for etching of a tungsten grain precedes selective dissolution of the copper.Type: ApplicationFiled: July 19, 1999Publication date: June 14, 2001Inventors: MYOUNG KI YOO, YOUNG-JOON BAIK, KYUNG TAE HONG
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Patent number: 5916005Abstract: A high curvature diamond field emitter tip fabrication method includes forming on a substrate a diamond film composed of square (100) phase-oriented facets and (111) phase-oriented facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, and etching the diamond film using a oxygen-containing gas plasma. Further, the method includes forming on a substrate a diamond film composed of square (100) facets and (111) facets distributed thereabout and columnar diamond particles having defect density differences between the diamond formed beneath the (100) and (111) diamond growth facets, forming a supporting film on the diamond film, removing the substrate therefrom, and etching the diamond film using an oxygen-containing gas plasma after any one of the previously described steps.Type: GrantFiled: January 31, 1997Date of Patent: June 29, 1999Assignee: Korea Institute of Science and TechnologyInventors: Young-Joon Baik, Kwang Yong Eun