Abstract: Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract: Provided herein is a gas sensor that includes a substrate, an insulating layer provided on the substrate, a first active layer disposed on the insulating layer, a second active layer which is disposed on the insulating layer and undergoes heterojunction with a portion of the first active layer, a first electrode and a second electrode which are disposed on the first active layer and are spaced apart from each other at a predetermined interval, and a third electrode and a fourth electrode which are disposed on the second active layer and are spaced apart from each other at a predetermined interval. The first active layer and the second active layer include different materials.

Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.

Abstract: Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.

Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.

Abstract: Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas.

Abstract: Provided are an optical modulator modulating optical signals and an optical module including the same. The optical modulator includes a lower clad layer, an optical transmission line extended in a first direction on the lower clad layer, and an upper clad layer on the optical transmission line and the lower clad layer. The optical transmission line may include graphene.

Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.

Abstract: A method of manufacturing a junction electronic device having a 2-Dimensional (2D) material as a channel, includes forming a pattern portion by surface-treating a substrate so that the patterned portion has a higher surface potential than other portions of the substrate; bonding a 2D material to rthe patterned portion having the higher surface potential by spraying a liquid including 2D material flakes onto the substrate; forming a pair of first electrodes in contact with both ends of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes and the 2D material; and forming a second electrode on the dielectric layer. The 2D materials are disposed at desired positions by chemical exfoliation.

Abstract: A mattress and a method of adjusting the pressure of a mattress are provided. The method includes a first process of measuring internal pressure before a user lies on a mattress having at least two zones in which cells having a closed inner space filled with fluid are formed, a second process of measuring an increase in the internal pressure of each cell occurring when the user lies on the mattress, and an average pressure adjusting process of adjusting an amount of the fluid introduced into each cell of the mattress based on a pressure variation caused by a difference between the internal pressure detected from each cell in the first process and the internal pressure detected from each cell in the second process.

Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode.

Abstract: Provided is a gas sensor including a substrate, a sensing electrode extended in a first direction on the substrate, and a plurality of heaters disposed in a second direction crossing the first direction on the substrate. The plurality of heaters is separated at both sides of the sensing electrode. The plurality of heaters includes graphene.

Abstract: Disclosed is a method of manufacturing a junction electronic device by disposing 2-Dimensional (2D) materials at desired positions by chemically exfoliating the 2D materials, and the method includes: forming a pattern by surface-treating a surface of a substrate; transferring a 2D material by spraying a liquid solution, in which 2D material flakes are dissolved, onto the substrate on which the pattern is formed; forming first electrodes at both sides of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes; and forming a second electrode on the dielectric layer.

Abstract: The present invention relates to a method of fabricating a nanowire and graphene-sheet hybrid structure, and a transparent electrode employing the same, in which a hybrid structure, in which a graphene sheet is attached on surfaces of nanowires, is fabricated by fabricating a line pattern, in which nanowires are aligned in a longitudinal direction, by using an electro-spinning method, and then additionally employing a dipping method of dipping the line pattern in a graphene sheet dispersed solution, and the fabricated hybrid structure is applied to the transparent electrode. Accordingly, a crosslinking portion is increased by decreasing a distance between nanowires present inside the line pattern to improve a conductive property of a nanowire metal line. Further, the nanowire with a relative uniform density is present within the fabricated line pattern, so that when the line pattern is fabricated on the entire substrate, it is possible to achieve a uniform distribution of nanowires over a large area.

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract: Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.

Abstract: A method of transferring graphene is provided. A method of transferring graphene in accordance with an exemplary embodiment of the present invention may include forming a graphene layer by composing graphene and a base layer, depositing a self-assembled monolayer on the graphene layer, and separating a combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.

Abstract: Provided is a graphene nanoribbon sensor. The sensor includes a substrate, a graphene layer formed on the substrate in a first direction, and an upper dielectric layer on the graphene layer. Here, the graphene layer may have a plurality of electrode regions respectively separated in the first direction and a channel between the plurality of electrode regions.