Abstract: Provided is a semiconductor package including a substrate including a first surface and a second surface opposite to the first surface, a connecting circuit arranged on the first surface of the substrate, a through silicon via (TSV) structure penetrating the substrate, a first passivation layer arranged on the connecting circuit, a second passivation layer arranged on the second surface, a first bumping pad arranged inside the first passivation layer, and a second bumping pad arranged inside the second passivation layer, wherein the first bumping pad includes a first pad plug, and a first seed layer surrounding a lower surface and sidewalls of the first pad plug, wherein the second bumping pad includes a second pad plug, and a second seed layer surrounding an upper surface and sidewalls of the second pad plug, and wherein the first seed layer and the second seed layer include materials having different reactivities to water.

Abstract: A parallel optical module includes a light-emitting or light-receiving element array 101 placed on a substrate 100, an optical connector 103 optically connecting the optical element array 101 and an external optical fiber array 105, the optical connector 103 having a shape of at least an octahedron which is bilaterally symmetrical about the center of the outer shape thereof viewed along the optical axis direction, and an engaging member 104 placed on the same substrate 100 as the substrate on which the optical element array 101 is mounted, the engaging member having a groove onto which the optical connector 103 is fitted. A side wall of the groove of the engaging member 104 has an inclination corresponding to, among each surface of the optical connector 103, a second surface 110 adjacent to a first surface 109 facing the optical element array 101 in the direction perpendicular to the substrate.

Abstract: A parallel optical module includes a light-emitting or light-receiving element array 101 placed on a substrate 100, an optical connector 103 optically connecting the optical element array 101 and an external optical fiber array 105, the optical connector 103 having a shape of at least an octahedron which is bilaterally symmetrical about the center of the outer shape thereof viewed along the optical axis direction, and an engaging member 104 placed on the same substrate 100 as the substrate on which the optical element array 101 is mounted, the engaging member having a groove onto which the optical connector 103 is fitted. A side wall of the groove of the engaging member 104 has an inclination corresponding to, among each surface of the optical connector 103, a second surface 110 adjacent to a first surface 109 facing the optical element array 101 in the direction perpendicular to the substrate.

Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

Abstract: A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

Abstract: A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

Abstract: A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

Abstract: An optical module is formed by sticking the optical element mounting substrate and the sealing substrate together, then by sealing the stuck body. The optical mounting substrate includes an optical element on its top surface and it is used to guide electrical signals to its back side through a through-via hole provided in itself. The sealing substrate includes a lens at its back side and a recessed part used to hold an optical fiber at its front side.

Abstract: The invention provides an optical waveguide for enabling the reduction of a coupling loss caused by difference in the size of a mode field diameter between optical waveguide modes different in the mode field diameter and a coupling loss caused by reflection on a boundary caused by the difference of media and an optical device using it. Structure provided with a mode field diameter converter provided with an antireflection part required to reduce a coupling loss between a microoptical circuit and a single mode optical fiber is integrally produced using effective refractive index control based upon photonic crystal structure.

Abstract: The invention provides an optical waveguide for enabling the reduction of a coupling loss caused by difference in the size of a mode field diameter between optical waveguide modes different in the mode field diameter and a coupling loss caused by reflection on a boundary caused by the difference of media and an optical device using it. Structure provided with a mode field diameter converter provided with an antireflection part required to reduce a coupling loss between a microoptical circuit and a single mode optical fiber is integrally produced using effective refractive index control based upon photonic crystal structure.

Abstract: A photonic crystal has a relatively simple configuration and exhibits a sufficiently large refractive index change. An optical functional device uses the photonic crystal, and a process fabricates such an optical functional device. The photonic crystal includes at least one polymer as a material and changes in refractive index by changing the temperature of the polymer to thereby control the band structure of the photonic crystal. For example, a polymer is charged into holes arranged in a two-dimensional photonic crystal and is heated using a thin-film heater or is cooled using a Peltier device. The temperature is controlled by a temperature controller.

Abstract: A semiconductor optical amplifier module comprises: a demultiplexer made of a semiconductor material to separate an optical input signal containing a plurality of wavelength components into a plurality of demultiplexed signals, each of the demultiplexed signals having a different one of the wavelength component; a plurality of semiconductor optical amplifiers each optically coupled to the demultiplexer to amplify a corresponding one of the demultiplexed signals; and a multiplexer made of the semiconductor material and optically coupled to the plurality of semiconductor optical amplifiers to combine the demultiplexed signals amplified by the semiconductor optical amplifiers to produce a multiplexed signal. The demultiplexer, the semiconductor amplifiers and the multiplexer are integrated on a single semiconductor substrate.