Abstract: A system to facilitate AR processing includes receiving captured media from a user device and context information relating to media that is being delivered to a receiving device. The system may use the media being delivered with the captured media to generate one or more virtual objects. The user device may augment a user's view of reality that is reflected in the captured media by overlaying or otherwise incorporating the virtual objects in the user's view of reality.

Abstract: Disclosed are methods and apparatus for providing one or more content items for display to a user of an end-user device. The user provides a comment in relation to a multimedia presentation. Based on this comment, and on content information relating to the multimedia presentation, a set of content items is then selected. This set of elements is provided for display to the user. The user may include any of the displayed content items in his comment.

Abstract: Disclosed is a method of augmenting user-input information that includes associating a first secondary device with primary media content, receiving user-input information input at the first secondary device, and analyzing the user-input information to identify user-content metadata. The method further includes at least one of: receiving primary-content metadata related to the primary media content and deriving primary-content metadata from the primary media content and identifying associations between the user-content metadata and the primary-content metadata.

Abstract: Disclosed are methods and apparatus for displaying a plurality of presentation elements to a user. A progress bar is displayed. A length of the progress bar is representative of a duration of a multimedia presentation. A communication box is also displayed. The communication box comprises a marker and a communication composed by an originator in relation to a certain point or time period within the multimedia presentation. The progress bar and the communication box are displayed such that the marker is in alignment with a position along the length of the progress bar that corresponds to the point or time period in the multimedia presentation in relation to which the communication was composed. The marker may be moved relative to the progress bar.

Abstract: A system to facilitate AR processing includes receiving captured media from a user device and context information relating to media that is being delivered to a receiving device. The system may use the media being delivered with the captured media to generate one or more virtual objects. The user device may augment a user's view of reality that is reflected in the captured media by overlaying or otherwise incorporating the virtual objects in the user's view of reality.

Abstract: A system to facilitate AR processing includes receiving captured media from a user device and context information relating to media that is being delivered to a receiving device. The system may use the media being delivered with the captured media to generate one or more virtual objects. The user device may augment a user's view of reality that is reflected in the captured media by overlaying or otherwise incorporating the virtual objects in the user's view of reality.

Abstract: A method of providing an update to a user mobile communication device, wherein the update comprises at least one new credential for a user mobile communication device following a change of a domain name related to a service, the method comprising changing the domain name, changing a state of an at least one old credential for the user mobile communication device used at the service to transient, granting access to the service to the user mobile communication device in response to a request for access using the at least one transient credential, determining if the user mobile communication device is in an acceptable environment to update to the at least one new credential and, when the user mobile communication device is in an acceptable environment, updating the user mobile communication device to the at least one new credential.

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon.

Abstract: Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate.

Abstract: Disclosed are methods and apparatus for displaying information relating to a portion of a multimedia presentation. A progress bar is provided and displayed. A length of the progress bar is representative of a duration of the multimedia presentation. A user selects a first and a second point in the multimedia presentation, thereby defining a portion of the presentation. Depending on the selection, one or more communications (e.g., comments, online postings, etc.) may be identified. Each of these communications may have been composed in relation to at least a point of the multimedia presentation that is within the defined portion. Information depending on those identified communications may then be displayed to the user.

Abstract: A method includes receiving content-association input, including identification of accessed first content and an index position of a second content, and associating the accessed first content with the second content at the index position. Users accessing the second content are provided information related to the first content in response to the access of the second content. The information provided may be a link to the first content, a description of the first content, a portion of the first content, or the entire first content. Another method includes providing a user interface within an application window while the application window displays a first content and providing a second window in response to selection input via the user interface. The second window displays an indexed second content. Input may be received via the second window to create an association of the first content with the second content at an index position.

Abstract: Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate.

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon.

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon.

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.