Patents by Inventor Young Tak Roh

Young Tak Roh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-tolerant unit MOSFET hardened against single event effect and total ionization dose effect
    Patent number: 10756167
    Abstract: Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: August 25, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Hee Chul Lee, Young Tak Roh
  • Radiation-tolerant unit MOSFET hardened against single event effect and total ionizing dose effect
    Patent number: 10756028
    Abstract: Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: August 25, 2020
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Hee Chul Lee, Young Tak Roh
  • RADIATION-TOLERANT UNIT MOSFET HARDENED AGAINST SINGLE EVENT EFFECT AND TOTAL IONIZATION DOSE EFFECT
    Publication number: 20190312102
    Abstract: Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.
    Type: Application
    Filed: November 14, 2018
    Publication date: October 10, 2019
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Hee Chul Lee, Young Tak Roh
  • RADIATION-TOLERANT UNIT MOSFET HARDENED AGAINST SINGLE EVENT EFFECT AND TOTAL IONIZING DOSE EFFECT
    Publication number: 20190287923
    Abstract: Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.
    Type: Application
    Filed: September 6, 2018
    Publication date: September 19, 2019
    Applicant: Korea Advanced Institute of Science and Technology
    Inventors: Hee Chul Lee, Young Tak Roh