Abstract: An electronic image stabilization (EIS) method includes: obtaining video frames derived from an output of an image sensor, wherein each of the video frames has a full field of view (FOV) of the image sensor; obtaining motion information of the video frames; dynamically estimating, by a processing circuit, EIS margins according to FOV variation of a plurality of cropped images within the video frames respectively; and applying stabilization correction to the cropped images according to the motion information and the EIS margins, to generate a plurality of stabilized images.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: An ink composition, a light conversion layer and a light emitting device are provided. The resin composition includes a quantum dot (A), a first resin (B1), a second resin (B2), an ethylenically unsaturated monomer (C), an initiator (D) and a solvent (E). The first resin (B1) is an alkali-insoluble resin, and the second resin (B2) is an alkali-soluble resin. The first resin (B1) includes a compound represented by the following Formula (1): In Formula (1), n is an integer from 1 to 10, X is benzene, toluene or naphthalene, and Y is toluene, methylnaphthalene, tetrahydrodicyclopentadiene, or 4,4?-dimethyl-1,1?-biphenyl.

Abstract: A resin composition and a cured film are provided. The resin composition includes a monomer mixture (A), a siloxane compound (B), a curing agent (C), and inorganic particles (D). The monomer mixture (A) includes a bisphenol fluorene compound (A-1) represented by Formula (I-1). The siloxane compound (B) has a group represented by Formula (II-a).

Abstract: A resin composition, a light conversion layer and a light emitting device are provided. The resin composition includes a quantum dot (A), an alkali-soluble resin (B), an ethylenically unsaturated monomer (C), a photoinitiator (D), a solvent (E) and a phenyl-based compound (F). The phenyl-based compound (F) includes at least one of a compound represented by following Formula (F-1) and a compound represented by following Formula (F-2). Based on a total usage amount of the resin composition as 100 parts by weight, a usage amount of the phenyl-based compound (F) is 0.05 to 5 parts by weight. In Formula (F-1) and Formula (F-2), the definition of R1, R3, R4, Y, Z, m, n and p are the same as defined in the detailed description.

Abstract: Composite dielectric structures for semiconductor die assemblies, and associated systems and methods are disclosed. In some embodiments, the composite dielectric structure includes a flexible dielectric layer configured to conform to irregularities (e.g., particles, defects) at a bonding interface of directly bonded semiconductor dies (or wafers). The flexible dielectric layer may include a polymer material configured to deform in response to localized pressure generated by the irregularities during bonding process steps. The composite dielectric structure includes additional dielectric layers sandwiching the flexible dielectric layer such that the composite dielectric structure can provide robust bonding strength to other dielectric layers through the additional dielectric layers. In some embodiments, a chemical vapor deposition process may be used to form the composite dielectric structure utilizing siloxane derivatives as a precursor.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A corneal storage composition is disclosed. The composition comprises a buffered, balanced, nutrient and electrolyte aqueous solution; ?-PGA; and ferulic acid, in amounts effective to maintain cell integrity and viability of the corneal tissue for a period of greater than 14 days.

Abstract: A black light-shielding photosensitive resin composition, a black matrix, a black light-shielding film, a frame, and a filling material for a splicing area are provided. The black light-shielding photosensitive resin composition includes a resin (A), a pigment (B), a monomer (C), an initiator (D), and a solvent (E). The resin (A) includes an epoxy resin (A-1) and a resin (A-2) having an ethylenic unsaturated functional group. The pigment (B) includes black particles (B-1) and hollow particles (B-2).

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: A vertical-cavity surface-emitting laser includes a substrate. A first mirror is disposed on the substrate. An active layer is disposed on the first mirror. An oxide layer is disposed on the active layer. An aperture is disposed on the active layer. The aperture is surrounded by the oxide layer. A second mirror is disposed on the aperture and the oxide layer. A high-contrast grating is disposed on the second mirror. The high-contrast grating includes a first grating element and a second grating element, and the first grating element and the second grating element are spaced apart from each other with an air gap therebetween. A passivation layer is disposed on the high-contrast grating. A first thickness of the passivation layer on a top surface of the first grating element is greater than a second thickness of the passivation layer on a first sidewall of the first grating element.

Abstract: An electronic device is provided. The electronic device includes a board, a first latch mechanism, and an expansion card. A controller is disposed on the board. The first latch mechanism is disposed on the board. The first latch mechanism is electrically connected to the controller. The expansion card is plugged in the first latch mechanism and disposed over the board. The expansion card is electrically connected to the controller through the first latch mechanism. The controller determines a connecting condition of the first latch mechanism according to a connecting signal provided by the expansion card.

Abstract: An electronic device is provided. The electronic device includes a board, a first latch mechanism, and an expansion card. A controller is disposed on the board. The first latch mechanism is disposed on the board. The first latch mechanism is electrically connected to the controller. The expansion card is plugged in the first latch mechanism and disposed over the board. The expansion card is electrically connected to the controller through the first latch mechanism. The controller determines a connecting condition of the first latch mechanism according to a connecting signal provided by the expansion card.

Abstract: An electronic image stabilization (EIS) method includes: obtaining video frames derived from an output of an image sensor, wherein each of the video frames has a full field of view (FOV) of the image sensor; obtaining motion information of the video frames; dynamically estimating, by a processing circuit, EIS margins according to FOV variation of a plurality of cropped images within the video frames respectively; and applying stabilization correction to the cropped images according to the motion information and the EIS margins, to generate a plurality of stabilized images.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: A semiconductor structure includes an electrode element with an upper surface. The upper surface includes at least one convex curved portion.

Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.