Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A Bluetooth Integrated Circuit includes a receiver, a transmitter, and a control circuit. The receiver circuit is configured to receive a scan request packet from an electronic device, and the scan request packet being transmitted by the electronic device in accordance with a Bluetooth wireless low energy standard. The transmitter circuit is configured to transmit a data packet or an advertising packet, and the control circuit is coupled to the receiver circuit and the transmitter circuit. When the receiver circuit receives the scan request packet, the control circuit detects a transmission rate at which the scan request packet is transmitted by the electronic device and controls the transmitter circuit to transmit the data packet or the advertising packet at the data rate related to the scan request packet.

Abstract: A Bluetooth Integrated Circuit includes a receiver, a transmitter, and a control circuit. The receiver circuit is configured to receive a scan request packet from an electronic device, and the scan request packet being transmitted by the electronic device in accordance with a Bluetooth wireless low energy standard. The transmitter circuit is configured to transmit a data packet or an advertising packet, and the control circuit is coupled to the receiver circuit and the transmitter circuit. When the receiver circuit receives the scan request packet, the control circuit detects a transmission rate at which the scan request packet is transmitted by the electronic device and controls the transmitter circuit to transmit the data packet or the advertising packet at the data rate related to the scan request packet.

Abstract: A method for obtaining an external IP address and its network protocol system are provided. A rack system of the network protocol system comprises a rack management controller (RMC), a power distribution unit and at least one node server. When a Dynamic Host Configuration Protocol (DHCP) service is lost in the rack system, a jumper of the rack management controller is detected to obtain an identification code. Then, a first temporary IP address of the rack management controller is obtained based on the identification code and a first table, and a first command package is sent to the power distribution unit by the rack management controller. After the first command package is received by the power distribution unit, an IP assign service is activated to set a second temporary IP address of the node server so that the node server can still communicate with the system management terminal.

Abstract: A method for obtaining an external IP address and its network protocol system are provided. A rack system of the network protocol system comprises a rack management controller (RMC), a power distribution unit and at least one node server. When a Dynamic Host Configuration Protocol (DHCP) service is lost in the rack system, a jumper of the rack management controller is detected to obtain an identification code. Then, a first temporary IP address of the rack management controller is obtained based on the identification code and a first table, and a first command package is sent to the power distribution unit by the rack management controller. After the first command package is received by the power distribution unit, an IP assign service is activated to set a second temporary IP address of the node server so that the node server can still communicate with the system management terminal.