Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: A brain tumor types distinguish system includes an image outputting device and a server computing device. The image outputting device outputs at least three brain images captured from the position of a brain tumor. The server computing device pre-stores a plurality of distinguish pathways corresponding to different types of brain tumors. The server computing device includes an image receiving module, an image pre-processing module, a data comparison module and a distinguish module. The image receiving module receives the brain images. The image pre-processing module pre-processes the brain images to obtain corresponding processed images thereof. The data comparison module compares the brain images and the processed images with the distinguish pathways to obtain at least three comparison results. The distinguish module statistically analyzes the comparison results to obtain a distinguish result.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: An electronic includes a substrate, a plurality of driving units, a first signal line and a second signal line. The substrate has a first side edge extending in a first extension direction and a second side edge extending in a second extension direction. The first side edge and the second side edge are curved in a normal direction of a projection surface of a top surface of the substrate. A curvature of the first side edge is greater than a curvature of the second side edge, and the curvature of the second side edge is not equal to zero. The driving units are disposed along the first side edge, the first signal line is electrically connected to one of the driving units, and a curvature of the first signal line is different from a curvature of the second signal line.

Abstract: An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

Abstract: A stretchable electronic device includes a first electronic unit including a first light emitting element, a second electronic unit including a second light emitting element and disposed adjacent to the first electronic unit, and an elasticity layer having a connecting region connecting the first display unit and the second display unit. In a top view of the stretchable electronic device, a size difference between the connecting region before stretching and the connecting region after stretching is greater than a size difference between the first electronic unit before stretching and the first electronic unit after stretching.

Abstract: An electronic device includes a display panel having a display surface that includes a first region and a second region. The display panel outputs a first light in the first region and a second light in the second region. The first light has a first normal brightness in a first orthogonal direction and a first oblique brightness in a first inclined direction. The second light has a second normal brightness in a second orthogonal direction and a second oblique brightness in a second inclined direction. The included angles between the orthogonal directions and the corresponding inclined directions are acute angles. A ratio of a difference between the first normal brightness and the second normal brightness to the first normal brightness is less than a ratio of a difference between the first oblique brightness and the second oblique brightness to the first oblique brightness is defined as a second ratio.

Abstract: Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a circuit region and a seal ring region surrounding the circuit region. The seal ring region includes a first active region extending lengthwise in a first direction and a first gate structure disposed on the first active region. The first gate structure extends lengthwise in a second direction that is tilted from the first direction. The first direction and the second direction form a tilted angle therebetween.

Abstract: A display device is provided. The display device includes a substrate, a driving transistor, a first insulation layer, a first electrode and a second insulation layer. The driving transistor is disposed on the substrate and includes a gate electrode, and the gate electrode projects a first projection profile on the substrate. The first insulation layer is disposed on the driving transistor. The first electrode is disposed on the first insulation layer, and projects a second projection profile on the substrate. The second insulation layer is disposed on the first electrode and the first insulation layer. The second insulation layer has an opening, the opening exposes a portion of the first electrode, and the opening projects a third projection profile on the substrate.

Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area .

Abstract: A memory device includes a multi-layer stack, a plurality of channel layers and a plurality of ferroelectric layers. The multi-layer stack is disposed on a substrate and includes a plurality of gate layers and a plurality of dielectric layers stacked alternately. The plurality of channel layers penetrate through the multi-layer stack and are laterally spaced apart from each other, wherein the plurality of channel layers include a first channel layer and a second channel layer, and a first electron mobility of the first channel layer is different from a second electron mobility of the second channel layer. Each of the plurality of channel layers are spaced apart from the multi-layer stack by one of the plurality of ferroelectric layers, respectively.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate, and the fin structure includes first semiconductor material layers and second semiconductor material layers alternately stacked. The method also includes forming a dummy gate structure across the fin structure and forming a gate spacer on a sidewall of the dummy gate structure. The method also includes partially oxidizing the gate spacer to form an oxide layer and removing the oxide layer to form a modified gate spacer. The method also includes removing the first semiconductor material layers to form gaps and forming a gate structure in the gaps to wrap around the second semiconductor material layers and over the second semiconductor material layers to cover the modified gate spacer.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: A display device includes a substrate, a gate line and a data line. The substrate includes a first side edge and a second side edge, a curvature of the first side edge is greater than a curvature of the second side edge, and the curvature of the second side edge is not equal to zero. The gate line and the data line are disposed on the substrate, and a curvature of the gate line is different from a curvature of the data line.

Abstract: An earphone device having gesture recognition functions includes a gesture recognition element, a signal transmission unit, and a voice output element. The gesture recognition element includes a transmission unit, a reception chain and a processing unit. The transmission unit transmits a transmission signal to detect the gesture. The reception chain receives a gesture signal to generate a feature map data. The processing unit is coupled to the reception chain for receiving the feature map data and utilizes an identification algorithm to recognize gesture according to the feature map data to generate a gesture controlling signal. The signal transmission unit receives and transmits the gesture controlling signal to an electronic device. The processing unit receives a controlling action generated by the electronic device according to the gesture controlling signal via the signal transmission unit.

Abstract: A range Doppler angle detection method executed by a range Doppler angle detection device includes steps of: receiving a first sensing signal and a second sensing signal; performing 1D Fast Fourier Transform (FFT) and 2D FFT to the first sensing signal for calculating one first 2D FFT map; performing the 1D FFT and the 2D FFT to the second sensing signal for calculating one second 2D FFT map; picking up one column of the first 2D FFT map and one column of the second 2D FFT map according to a given Doppler index; performing the 3D FFT to the picked column of the first 2D FFT map and the picked column of the second 2D FFT map for calculating a range Doppler angle. Therefore, a computation loading of the gesture recognition function can be reduced.

Abstract: A generic gesture detecting method executed by a generic gesture detecting device includes steps of: receiving a current sensing signal from a sensing unit; generating a current image according to the current sensing signal; determining whether the current image is similar with a stored image stored in a memory unit; when the current image is similar with the stored image, detecting the current image and the stored image to be a gesture signal; when the current image is different from the stored image, storing the current image into the memory unit, and returning to the step of receiving a current sensing signal. Since the generic gesture detecting device can automatically detect the gesture signal, the user may not need to enable a detecting time period before implementing a command motion. Therefore, the user can make the command motion without enabling the detecting time period, and the convenience can be increased.

Abstract: A range Doppler angle detection method executed by a range Doppler angle detection device includes steps of: receiving a first sensing signal and a second sensing signal; performing 1D Fast Fourier Transform (FFT) and 2D FFT to the first sensing signal for calculating one first 2D FFT map; performing the 1D FFT and the 2D FFT to the second sensing signal for calculating one second 2D FFT map; picking up one column of the first 2D FFT map and one column of the second 2D FFT map according to a given Doppler index; performing the 3D FFT to the picked column of the first 2D FFT map and the picked column of the second 2D FFT map for calculating a range Doppler angle. Therefore, a computation loading of the gesture recognition function can be reduced.

Abstract: A rotary screw compressor includes a compressor assembly and a drive motor assembly. The compressor assembly includes a compressor housing, a first screw rotor and a second screw rotor installed in the compressor housing and engaged with each other. An end of the first screw rotor is an engaging end. The drive motor assembly includes a motor housing, a motor rotor, a motor stator and a centering bushing installed in the motor housing, and the motor stator installed on an outer side of the motor rotor and capable of driving the motor rotor to rotate, and the centering bushing is passed and connected to the inner circumference of the motor rotor and has an end sheathed on the engaging end, so that the motor rotor can drive the first screw rotor to rotate through the centering bushing and the engaging end.

Abstract: A performing device of an impulse-like gesture recognition system executes an impulse-like gesture recognition method. A performing procedure of the impulse-like gesture recognition method includes steps of: receiving a sensing signal from a sensing unit; determining a prediction with at least one impulse-like label according to the sensing frames by a deep learning-based model; and classifying at least one gesture event according to the prediction. The gesture event is classified to determine the motion of the user. Since the at least one impulse-like label is used to label at least one detection score of the deep learning-based model, the detection score is non-decreasing, reaction time of the at least one gesture event for an incoming gesture is fast, rapid consecutive gestures are easily decomposed, and an expensive post-processing is not needed.