Abstract: A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.

Abstract: A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a low temperature, particularly at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: V1-xMxSn4Bi2Se7-yTey??[Chemical Formula 1] In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, and y is greater than 0 and less than or equal to 1.

Abstract: The present invention relates to a novel chalcogen-containing compound that exhibits excellent phase stability even at a temperature corresponding to the driving temperature of a thermoelectric element, and has a high output factor and thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index (ZT) through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: V1-xMxSn4-yPbyBi2Se7-zTez??[Chemical Formula 1] In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than or equal to 1.

Abstract: A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

Abstract: The present invention provides a novel compound semiconductor that has improved thermoelectric figure of merit as well as excellent electric conductivity, and thus, can be applied for various uses such as thermoelectric conversion material of a thermoelectric conversion device, a solar battery, and the like, and a method for preparing the same.

Abstract: The present invention provides a novel compound semiconductor that has improved thermoelectric figure of merit as well as excellent electric conductivity, and thus, can be applied for various uses such as thermoelectric conversion material of a thermoelectric conversion device, a solar battery, and the like, and a method for preparing the same.

Abstract: A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: MyV1-ySnxSb2Tex+3, wherein V is vacancy, M is at least one alkali metal, x?6, and 0<y?0.4.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V1-2xSn4Bi2-xAg3xSe7, wherein V is vacancy and 0<x<0.5.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a low temperature, particularly at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: V1-xMxSn4Bi2Se7-yTey ??[Chemical Formula 1] In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, and y is Greater than 0 and less than or equal to 1.

Abstract: The present invention relates to a P-type skutterudite thermoelectric material, a method for preparing the same, and a thermoelectric device including the same. More specifically, the present invention relates to a P-type skutterudite thermoelectric material into which a specific filler and charge compensator are introduced, and which exhibits high thermoelectric performance, a method for preparing the same, and a thermoelectric device including the same.

Abstract: The present invention provides a novel compound semiconductor that has improved thermoelectric figure of merit as well as excellent electric conductivity, and thus, can be applied for various uses such as thermoelectric conversion material of a thermoelectric conversion device, a solar battery, and the like, and a method for preparing the same.

Abstract: A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: MyV1-ySnxSb2Tex+3, wherein V is vacancy, M is at least one alkali metal, x?6, and 0<y?0.4.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index (ZT) through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: V1-xMxSn4-yPbyBi2Se7-zTez ??[Chemical Formula 1] In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than or equal to 1.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V1-2xSn4Bi2-xAg3xSe7, wherein V is vacancy and 0<x<0.5.

Abstract: The present invention relates to a novel chalcogen-containing compound that exhibits excellent phase stability even at a temperature corresponding to the driving temperature of a thermoelectric element, and has a high output factor and thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same.

Abstract: A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

Abstract: The present invention relates to a P-type skutterudite thermoelectric material, a method for preparing the same, and a thermoelectric device including the same. More specifically, the present invention relates to a P-type skutterudite thermoelectric material into which a specific filler and charge compensator are introduced, and which exhibits high thermoelectric performance, a method for preparing the same, and a thermoelectric device including the same.