Patents by Inventor Yu-Hsin Chan

Yu-Hsin Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240088042
    Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 14, 2024
    Inventors: SHU-WEI LI, HAN-TANG HUNG, YU-CHEN CHAN, CHIEN-HSIN HO, SHIN-YI YANG, MING-HAN LEE, SHAU-LIN SHUE
  • Publication number: 20240021468
    Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.
    Type: Application
    Filed: August 8, 2023
    Publication date: January 18, 2024
    Inventors: Yu-Hsin Chan, Cai-Ling Wu, Chang-Wen Chen, Po-Hsiang Huang, Yu-Yu Chen, Kuan-Wei Huang, Jr-Hung Li, Jay Chiu, Ting-Kui Chang
  • Publication number: 20220359263
    Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.
    Type: Application
    Filed: July 22, 2021
    Publication date: November 10, 2022
    Inventors: Yu-Hsin Chan, Cai-Ling Wu, Chang-Wen Chen, Po-Hsiang Huang, Yu-Yu Chen, Kuan-Wei Huang, Jr-Hung Li, Jay Chiu, Ting-Kui Chang
  • Publication number: 20220013407
    Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hsin Chan, Jiing-Feng Yang, Kuan-Wei Huang, Meng-Shu Lin, Yu-Yu Chen, Chia-Wei Wu, Chang-Wen Chen, Wei-Hao Lin, Ching-Yu Chang