Abstract: Various techniques are disclosed for automatically generating sub-cells for a non-final layout of an analog integrated circuit. Device specifications and partition information for the analog integrated circuit is received. Based on the device specifications and the partition information, first cut locations for a first set of cuts to be made along a first direction of a non-final layout of the analog integrated circuit and second cut locations for a second set of cuts to be made along a second direction in the non-final layout are determined. The first set of cuts are made in the non-final layout at the cut locations to produce a temporary layout. The second set of cuts are made in the temporary layout at the cut locations to produce a plurality of sub-cells.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A method for making a desired pattern of a metallic nanostructure of a metal includes: (a) forming the desired pattern of a self-assembled monolayer matrix of a first organic compound on a substrate, the first organic compound having a tail group selected to be active toward deposition of the metal on the self-assembled monolayer matrix; (b) forming an inert layer of a second organic compound on the substrate by contacting an assembly of the substrate and the self-assembled monolayer matrix with a solution containing the second organic compound, the second organic compound having a tail group selected to be inactive toward the deposition of the metal on the inert layer; and (c) depositing the metal on the self-assembled monolayer matrix by contacting an assembly of the substrate, the self-assembled monolayer matrix and the inert layer with a solution containing metal ions, followed by reducing the metal ions.

Abstract: In a process for producing nanocarbon materials, a metal reducing agent and a carbon source are subjected to a chemical reduction reaction under an atmosphere which will not interfere with the reaction and at a temperature preferably lower than 1000° C., such that a nanocarbon material having a graphite-like structure is formed therefrom. Optionally, an additive, e.g. a fullerene compound, or a porous substrate such as zeolite powder, may be used during the production of the nanocarbon material.