Abstract: The present disclosure, in some embodiments, relates to a method of forming an SOI substrate. The method may be performed by epitaxially forming a silicon-germanium (SiGe) layer over a sacrificial substrate and epitaxially forming a first active layer on the SiGe layer. The first active layer has a composition different than the SiGe layer. The sacrificial substrate and is flipped and the first active layer is bonded to an upper surface of a dielectric layer formed over a first substrate. The sacrificial substrate and the SiGe layer are removed and the first active layer is etched to define outermost sidewalls and to expose an outside edge of an upper surface of the dielectric layer. A contiguous active layer is formed by epitaxially forming a second active layer on the first active layer. The first active layer and the second active layer have a substantially same composition.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate including a first semiconductive region of a first conductive type and gate structures over the first semiconductive region, where a gap between the gate structures exposes a portion of the first semiconductive region; and forming a second semiconductive region of a second conductive type in the gap starting from the exposed portion of the first semiconductive region. The forming of the second semiconductive region includes: growing, in a chamber, an epitaxial silicon-rich layer with a first growth rate around a sidewall adjacent to the gate structures that is greater than a second growth rate at a central portion; and, in the chamber, partially removing the epitaxial silicon-rich layer with an etchant with a first etching rate around the sidewall adjacent to the gate structures that is greater than a second etching rate at the central portion.

Abstract: The present disclosure relates to a debonding apparatus. In some embodiments, the debonding apparatus comprises a wafer chuck configured to hold a pair of bonded substrates on a chuck top surface. The debonding apparatus further comprises a pair of separating blades including a first separating blade and a second separating blade placed at edges of the pair of bonded substrates diametrically opposite to each other. The first separating blade has a first thickness that is smaller than a second thickness of the second separating blade. The debonding apparatus further comprises a flex wafer assembly placed above the pair of bonded substrates and configured to pull the pair of bonded substrates upwardly to separate a second substrate from a first substrate of the pair of bonded substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

Abstract: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.

Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

Abstract: The present disclosure relates to a method for debonding a pair of bonded substrates. In the method, a debonding apparatus is provided comprising a wafer chuck, a flex wafer assembly, and a set of separating blades. The pair of bonded substrates is placed upon the wafer chuck so that a first substrate of the bonded substrate pair is in contact with a chuck top surface. The flex wafer assembly is placed above the bonded substrate pair so that its first surface is in contact with an upper surface of a second substrate of the bonded substrate pair. A pair of separating blades having different thicknesses is inserted between the first and second substrates from edges of the pair of bonded substrates diametrically opposite to each other while the second substrate is concurrently pulled upward until the flex wafer assembly flexes the second substrate from the first substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a supporting substrate. The semiconductor device structure also includes a first carrier-trapping layer covering the supporting substrate. The first carrier-trapping layer is doped with a group-IV dopant. The semiconductor device structure further includes an insulating layer covering the first carrier-trapping layer. In addition, the semiconductor device structure includes a semiconductor substrate over the insulating layer. The semiconductor device structure also includes a transistor. The transistor includes a gate stack over the semiconductor substrate and source and drain structures in the semiconductor substrate.

Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

Abstract: A method for fabricating a semiconductor device includes providing a first wafer comprising a substrate and a first semiconductor material layer, bonding the first wafer to a second wafer, the second wafer comprising a sacrificial layer and a second semiconductor material layer, removing the sacrificial layer, patterning the bonded wafers to create a first structure and a second structure, removing the second semiconductor material from the first structure, forming a first type of transistor in the first semiconductor material of the first structure, and forming a second type of transistor in the second semiconductor material of the second structure.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.

Abstract: The present disclosure relates to a method for debonding a pair of bonded substrates. In the method, a debonding apparatus is provided comprising a wafer chuck, a flex wafer assembly, and a set of separating blades. The pair of bonded substrates is placed upon the wafer chuck so that a first substrate of the bonded substrate pair is in contact with a chuck top surface. The flex wafer assembly is placed above the bonded substrate pair so that its first surface is in contact with an upper surface of a second substrate of the bonded substrate pair. A pair of separating blades having different thicknesses is inserted between the first and second substrates from edges of the pair of bonded substrates diametrically opposite to each other while the second substrate is concurrently pulled upward until the flex wafer assembly flexes the second substrate from the first substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

Abstract: A transistor device includes a substrate having a first region and a second region, a first semiconductor layer of a first semiconductor material having a first portion over the first region and a second portion over the second region, the first portion being separated from the second portion, a second semiconductor layer of a second semiconductor material over the second portion of the first semiconductor layer, a first transistor of a first conductivity type, the first transistor disposed within the first region and having a first set of source/drain regions formed in the first semiconductor layer, and a second transistor of a second conductivity type, the second transistor disposed within the second region and having a second set of source/drain regions formed in the second semiconductor layer. The second conductivity type is different than the second conductivity type, and the second semiconductor material is different from the first semiconductor material.

Abstract: The present disclosure provides a method of manufacturing an image sensor device. The method includes: forming an etch stop layer on a first substrate; forming a light-sensing region comprising a light sensing quantum structure being able to detect a wavelength greater than about 1.5 um; forming a semiconductive substrate over the light-sensing region, the semiconductive substrate comprising an active component; forming an isolation structure extended through the light-sensing region; selectively removing the first substrate to expose the etch stop layer; and thinning the etch stop layer thereby exposing the light-sensing region.

Abstract: A method for manufacturing a deep trench isolation (DTI) structure with a tri-layer passivation layer is provided. An etch is performed into a semiconductor substrate to form a trench. A first undoped semiconductor layer is formed by epitaxy lining surfaces of the semiconductor substrate that define the trench. A doped semiconductor layer is formed by epitaxy over and lining the first undoped semiconductor layer in the trench. A second undoped semiconductor layer is formed by epitaxy over and lining the doped semiconductor layer in the trench. A structure resulting from the method is also provided.

Abstract: Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along sidewalls of the recess, thereby forming an enlarged recess. An epitaxial region is formed on sidewalls and a bottom of the enlarged recess, at least a portion of the epitaxial region comprising a second semiconductor material, the second semiconductor material being different from the first semiconductor material. A dielectric region is formed on the epitaxial region, the epitaxial region extending along a sidewall of the dielectric region.

Abstract: Backside illuminated (BSI) image sensor devices are described as having pixel isolation structures formed on a sacrificial substrate. A photolayer is epitaxially grown over the pixel isolation structures. Radiation-detecting regions are formed in the photolayer adjacent to the pixel isolation structures. The pixel isolation structures include a dielectric material. The radiation-detecting regions include photodiodes. A backside surface of the BSI image sensor device is produced by planarized removal of the sacrificial substrate to physically expose the pixel isolation structures or at least optically expose the photolayer.