Patents by Inventor Yu-Hung Lai

Yu-Hung Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190012956
    Abstract: A light emitting module including a circuit carrier and a plurality of light emitting devices is provided. The circuit carrier includes a first circuit layer, a second circuit layer, a dielectric layer and a plurality of conductive vias. The first circuit layer and the second circuit layer are located at two opposite sides of the dielectric layer. The conductive vias pass through the dielectric layer and two opposite end portions of each of the conductive vias are respectively connected to the first circuit layer and the second circuit layer. The light emitting devices are electrically bonded to the first circuit layer. Moreover, the light emitting devices are disposed in a device disposing area of the circuit carrier and the conductive vias are arranged outside the device disposing area. A display device is also provided.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 10, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Po-Jen Su, Hsuan-Wei Mai
  • Publication number: 20190006559
    Abstract: A micro light emitting diode including an epitaxial layer, an insulation layer, a first electrode, and a second electrode is provided. The insulation layer is located on a surface of the epitaxial layer and has a first through hole and a second through hole. The first electrode is electrically connected to a first-type semiconductor layer of the epitaxial layer through the first through hole and has a plurality of first-electrode flat portions. The first-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. The second electrode is electrically connected to a second-type semiconductor layer of the epitaxial layer through the second through hole and has a plurality of second-electrode flat portions. The second-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. A display panel is also provided.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 3, 2019
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Patent number: 10170455
    Abstract: A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: January 1, 2019
    Assignee: PlayNitride Inc.
    Inventors: Tzu-Yang Lin, Yu-Hung Lai, Yu-Yun Lo
  • Patent number: 10164152
    Abstract: A light emitting diode (LED) chip has an inclined notch. The inclined notch has at least one inclined surface. The LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The inclined surface is inclined with respect to the light emitting layer. The first electrode is electrically connected to the first-type doped semiconductor layer. The second electrode is electrically connected to the second-type doped semiconductor layer. The inclined notch is disposed in the light emitting layer.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: December 25, 2018
    Assignee: PlayNitride Inc.
    Inventors: Tzu-Yang Lin, Yu-Hung Lai, Yun-Li Li, Yu-Yun Lo
  • Publication number: 20180364222
    Abstract: A Janus particle includes a low-dimensional substrate and biomolecules. A surface of the low-dimensional substrate includes a biomolecule-modified region, wherein the biomolecules are attached on the surface of the low-dimensional substrate and in the biomolecule-modified region. The relationship between the surface area of the biomolecule-modified region and the total surface area of the low-dimensional substrate is represented as follows: (?)AS?AB?(½)AS where AB represents the surface area of the biomolecule-modified region, and AS represents the total surface area of the low-dimensional substrate.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 20, 2018
    Inventors: Chang-Shu Kuo, Yu-Hung Lai
  • Publication number: 20180333945
    Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed after the micro devices contact the receiving substrate. At least a portion of the micro devices are transferred from the carrier substrate onto the receiving substrate after changing the temperature of at least one of the carrier substrate and the receiving substrate.
    Type: Application
    Filed: July 26, 2018
    Publication date: November 22, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Pei-Hsin Chen
  • Publication number: 20180337214
    Abstract: A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.
    Type: Application
    Filed: June 8, 2018
    Publication date: November 22, 2018
    Applicant: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yu-Hung Lai, Yi-Min Su, Yu-Yun Lo, Tzu-Yang Lin
  • Patent number: 10121772
    Abstract: A display apparatus includes a driving substrate, a plurality of light-emitting devices, and a plurality of metal common electrodes. The light-emitting devices are dispersedly disposed on the driving substrate, and each of the light-emitting devices includes an epitaxial structure and a first type electrode and a second type electrode disposed on the epitaxial structure. The metal common electrodes are dispersedly disposed on the driving substrate and in contact with a portion of the second type electrode of each of the light-emitting devices to form an ohmic contact.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: November 6, 2018
    Assignee: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yu-Hung Lai, Yi-Min Su
  • Publication number: 20180294387
    Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed, so that at least a portion of the micro devices are released from the carrier substrate and transferred onto the receiving substrate. A number of the at least a portion of the micro devices is between 1000 and 2000000.
    Type: Application
    Filed: June 2, 2017
    Publication date: October 11, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yun-Li Li, Tzu-Yang Lin, Yu-Hung Lai, Pei-Hsin Chen
  • Publication number: 20180277591
    Abstract: A micro LED including an epitaxial stack layer, a first electrode and a second electrode is provided. A lower surface of the first electrode is in contact with an upper surface of a first semiconductor layer of the epitaxial stack layer. An upper surface of the second electrode is in contact with a lower surface of a second semiconductor layer of the epitaxial stack layer. The lower surface of the first electrode substantially coincides with the upper surface of the first semiconductor layer. The upper surface of the second electrode substantially coincides with the lower surface of the second semiconductor layer. Furthermore, a display panel is also provided.
    Type: Application
    Filed: May 4, 2017
    Publication date: September 27, 2018
    Applicant: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yu-Hung Lai, Yi-Min Su, Yu-Yun Lo, Tzu-Yang Lin
  • Patent number: 10079265
    Abstract: A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: September 18, 2018
    Assignee: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yu-Hung Lai, Yi-Min Su, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20180261647
    Abstract: Disclosed are an epitaxial wafer and a display device that includes a display substrate, a first sub pixel unit and a second sub pixel unit. The first sub pixel unit is disposed on the display substrate and has a first light emitting area. The second sub pixel unit is disposed on the display substrate and has a second light emitting area. The first sub pixel unit and the second sub pixel unit belong to same color type. The first sub pixel unit and the second sub pixel unit are formed from an epitaxial structure on the epitaxial wafer. The first sub pixel unit and the second sub pixel unit are formed and transferred to the display substrate from the epitaxial wafer. The first light emitting area and the second light emitting area are related to at least the photoluminescence measurement result of the epitaxial wafer.
    Type: Application
    Filed: April 25, 2017
    Publication date: September 13, 2018
    Inventor: Yu-Hung LAI
  • Publication number: 20180240941
    Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.
    Type: Application
    Filed: April 23, 2018
    Publication date: August 23, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yu-Chu Li, Yu-Hung Lai, Tzu-Yang Lin
  • Publication number: 20180226450
    Abstract: A light emitting unit has a first electrode, a second electrode and an epitaxial structure disposed between the first electrode and the second electrode. The epitaxial structure has a light emission layer, a first type semiconductor layer disposed between the light emission layer and the first electrode, and a second type semiconductor layer disposed between the light emission layer and the second electrode. A first surface of the second type semiconductor layer is facing the light emission layer. The second type semiconductor layer has a second surface opposite to the first surface and the second surface has at least one recess. At least portion of the second electrode is disposed within the at least one recess. A display device has a substrate, a first electrode connection layer, a second electrode connection layer, and a plurality of aforementioned light emitting units.
    Type: Application
    Filed: April 17, 2017
    Publication date: August 9, 2018
    Inventor: Yu-Hung LAI
  • Patent number: 10043785
    Abstract: A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. The orthogonal projection area of each of the conductive bumps on the substrate is 1.05 times to 1.5 times of the orthogonal projection area of each of the micro light emitting chips on the substrate.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: August 7, 2018
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Tzu-Yang Lin
  • Patent number: 10026722
    Abstract: A light emitting component includes an epitaxial structure, a first electrode and a second electrode. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is connected to the first type semiconductor layer and at least part of the first electrode is located at a first side of the epitaxial structure. The second electrode is connected to the second type semiconductor layer and located at the first side of the epitaxial structure. A part of the second electrode is located between the second type semiconductor layer and a part of the first electrode.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: July 17, 2018
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Yu-Hung Lai, Tzu-Yang Lin
  • Publication number: 20180198020
    Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 12, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20180197461
    Abstract: A display panel including a backplane and a plurality of micro LEDs is provided. The backplane includes a plurality of sub-pixels. Each of the sub-pixels has N sets of bonding pad. Each set of bonding pads includes a first electrical pad and X second electrical pads. N is an integer of 1˜3, X is an integer of 2˜4. The micro LEDs are respectively disposed in the sub-pixels, and the micro LED is electrically connected to one corresponding set of bonding pads of the N bonding pad sets. A first electrical carrier and a second electrical carrier are provided by the backplane to each of the micro LEDs through the one corresponding set of bonding pads.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 12, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Tzu-Yang Lin, Yun-Li Li, Yu-Yun Lo
  • Publication number: 20180198024
    Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, side surface and a second surface opposite to the first surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacted the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on the first surface and the side surface, and is electrically connected to the second type doped semiconductor layer and contacted the second type doped semiconductor layer on a portion of the side surface. A length of a diagonal of the micro light-emitting diode chip is greater than 1 micrometer and is less than or equal to 140 micrometers.
    Type: Application
    Filed: January 9, 2018
    Publication date: July 12, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20180190878
    Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.
    Type: Application
    Filed: December 14, 2017
    Publication date: July 5, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yun-Li Li, Yu-Hung Lai, Tzu-Yang Lin