Patents by Inventor Yu KURIOKA

Yu KURIOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20230018824
    Abstract: A process of forming a gate insulating film in a silicon carbide semiconductor device. The process includes performing a first stage of a nitriding heat treatment by a gas containing oxygen and nitrogen, followed by depositing an oxide film, and then performing a second stage of the nitriding heat treatment by a gas containing nitric oxide and nitrogen. The amount of nitrogen at the treatment starting point of the first stage of the nitriding heat treatment is greater than the amount of nitrogen at the treatment starting point of the second stage of the nitriding heat treatment. The amount of nitrogen at the treatment ending point of the second stage of the nitriding heat treatment is greater than the amount of nitrogen at the treatment ending point of the first stage of the nitriding heat treatment.
    Type: Application
    Filed: May 31, 2022
    Publication date: January 19, 2023
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Yu KURIOKA