Abstract: A method of reducing a concentration of a nitrogen oxide, the method comprising: contacting a microorganism with a nitrogen oxide-containing sample to reduce the concentration of the nitrogen oxide in the sample, wherein the contacting comprises contacting the microorganism with Fe(II)(L)-NOx in a bioreactor, wherein the Fe(II)(L)-NOx is a complex in which a chelating agent, Fe2+, and NOx are chelated, wherein L is the chelating agent, and wherein NOx is a nitrogen oxide ligand.

Abstract: An optical proximity correction (OPC) whereby corner rounding may be effectively controlled, and a mask manufacturing method performed using the OPC method are provided. According to the OPC method, an inner edge is generated through decomposition of a layout, and a displacement (DISin_frag) of an inner fragment and a displacement (DISsel) of a selected fragment are calculated based on the inner edge to additionally displace a fragment, so as to manufacture a mask layout with minimized corner rounding without violating mask rule check (MRC).

Abstract: An optical proximity correction (OPC) whereby corner rounding may be effectively controlled, and a mask manufacturing method performed using the OPC method are provided. According to the OPC method, an inner edge is generated through decomposition of a layout, and a displacement (DISin_frag) of an inner fragment and a displacement (DISsel) of a selected fragment are calculated based on the inner edge to additionally displace a fragment, so as to manufacture a mask layout with minimized corner rounding without violating mask rule check (MRC).

Abstract: Exemplary embodiments of the present invention relate to eyeglasses that have a transparent display and a controlling method thereof. The eyeglasses that have a transparent display include a lens unit, a frame unit coupled with the lens unit, and a pair of leg units connected to respective sides of the frame unit, wherein each of the lens unit and the frame unit comprises a transparent display.

Abstract: A light emitting diode (LED) driving device is provided. The LED driving device includes a rectifier configured to rectify alternating current (AC) power to generate rectified power; an AC driver configured to control operations of a plurality of LED groups so that the plurality of LED groups receive the rectified power generated by the rectifier; and a light amount controller configured to reduce an amount of current applied to the plurality of LED groups when a peak value of the rectified power is increased, and increase the amount of current applied to the plurality of LED groups when the peak value of the rectified power is reduced.

Abstract: A light emitting diode (LED) driving device is provided. The LED driving device includes a rectifier configured to rectify alternating current (AC) power to generate rectified power; an AC driver configured to control operations of a plurality of LED groups so that the plurality of LED groups receive the rectified power generated by the rectifier; and a light amount controller configured to reduce an amount of current applied to the plurality of LED groups when a peak value of the rectified power is increased, and increase the amount of current applied to the plurality of LED groups when the peak value of the rectified power is reduced.

Abstract: Exemplary embodiments of the present invention relate to eyeglasses that have a transparent display and a controlling method thereof. The eyeglasses that have a transparent display include a lens unit, a frame unit coupled with the lens unit, and a pair of leg units connected to respective sides of the frame unit, wherein each of the lens unit and the frame unit comprises a transparent display.

Abstract: A photoelectric device that reduces optical loss, reduces recombination loss of carriers, and can be manufactured by using a simplified process is provided. The photoelectric device includes a semiconductor substrate, a first semiconductor stack on a first surface of the semiconductor substrate and having a first conductivity, and a second semiconductor stack on the first surface of the semiconductor substrate and having a second conductivity opposite to the first conductivity. Edge portions of the first and second semiconductor stacks face each other with an insulating portion therebetween.

Abstract: Provided is a solar cell including: a semiconductive base layer having a first conductivity type; a semiconductive emitter layer disposed on top of the base layer and having a second conductivity type opposite to the first conductivity type; a front electrode disposed on top of the emitter layer; a passivation layer disposed under the base layer and including a contact hole exposing the base layer; and a rear electrode disposed under the passivation layer and connected with the base layer through the contact hole, wherein the rear electrode comprises a silicon (Si)-aluminum (Al) eutectic alloy powder.

Abstract: The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.

Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Abstract: A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.

Abstract: A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.

Abstract: The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.

Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Abstract: The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.

Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Abstract: In a method of manufacturing a shallow trench isolation (STI) structure using a HF vapor etching process according to some embodiments of the invention, a trench is formed in a semiconductor substrate. A buffer layer and a first insulating layer, which fill the trench, are formed. A portion of the first insulating layer is removed by performing an etching process using HF vapor, thereby removing a void existing in the first insulating layer. A second insulating layer filling the trench is formed on the etched first insulating layer. Other embodiments of the invention are described and claimed.