Abstract: Disclosed are a modified nanoscale zero-valent iron (nZVI) and a preparation method and an application thereof. The preparation method of the modified nZVI includes the following steps: S1: mixing nZVI, a stabilizer and an oxidant together and stirring in an inert atmosphere to obtain a polymerization precursor solution; and S2: dripping pyrrole into the polymerization precursor solution prepared in the S1, maintaining an inert gas atmosphere for polymerization reaction, and performing cooling, filtration and vacuum drying to obtain the modified nZVI.

Abstract: A method for measuring a thickness of a thin film layer disposed on a piece of glass is implemented using a computer device that stores a thin film image of the thin film layer, a surface dataset associated with a surface of the thin film layer, and a plurality of reference parameter sets each being associated with a specific thickness of the thin film layer, the method including: generating a spectral image dataset that includes spectral data associated with different pixels of the thin film image using a spectral transformation matrix; performing regression analysis on the surface dataset and the spectral image dataset, so as to obtain a thickness parameter set including a plurality of thickness parameters; and determining a thickness of the thin film layer using the thickness parameter set and the plurality of reference parameter sets.

Abstract: A micro-LED display panel includes a substrate, an insulating layer on the substrate, and a plurality of micro-LEDs on the substrate and embedded in the insulating layer. The micro-LEDs define a display area. Each micro-LED includes a bottom surface coupled to a lower electrode and a top surface exposed from the insulating layer and coupled to the upper electrode. Conductive blocks are set outside the display area, the conductive blocks are electrically coupled to a driving circuit on the substrate. Top wires are set on a surface of the insulating layer away from the substrate and each top wire is electrically coupled to at least one upper electrode and at least one conductive block.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a silicon layer, a gate structure, gate spacers, and source/drain structures. The semiconductor fin is over the substrate. The silicon layer is over the semiconductor fin. The gate structure is over the silicon layer, in which the gate structure includes an interfacial layer over the silicon layer, a gate dielectric layer over the interfacial layer, and a gate electrode over the gate dielectric layer. The gate spacers are on opposite sidewalls of the gate structure and in contact with the interfacial layer of the gate structure, in which a bottom surface of the interfacial layer is higher than bottom surfaces of the gate spacers. The source/drain structures are on opposite sides of the gate structure.

Abstract: An electronic device is provided by the present disclosure. The electronic device includes a substrate; a first transistor disposed on the substrate and including a first semiconductor layer and a gate electrode; a first insulating layer disposed between the first semiconductor layer and the gate electrode; a second insulating layer disposed on the first insulating layer, wherein the first semiconductor layer and the gate electrode are located between the substrate and the second insulating layer; a barrier layer disposed on the second insulating layer; and a second transistor disposed on the barrier layer and including a second semiconductor layer, wherein the barrier layer is disposed between the second semiconductor layer and the second insulating layer.

Abstract: A method for processing two-dimensional (2D) nuclear magnetic resonance (NMR) Diffusion Ordered Spectroscopy (DOSY) based on deep learning comprises constructing a simulated dataset by generating simulated data using a mathematical model based on signal characteristics of the 2D NMR DOSY, generating labels for training a deep learning network model, wherein the labels comprise a first two-dimensional matrix, and two dimensions of the first two-dimensional matrix comprise chemical shift and diffusion coefficients, constructing the deep learning network model and setting training parameters of the deep learning network model, training the deep learning network model using the simulated dataset, and testing the deep learning network model.

Abstract: A method for forming a high electron mobility transistor includes the steps of providing a substrate, sequentially forming a buffer layer, a channel layer, a barrier layer, and a semiconductor gate layer on the substrate, forming a metal gate layer on the semiconductor gate layer, forming an insulating layer on the barrier layer, the semiconductor gate layer, and the metal gate layer and a passivation layer on the insulating layer, forming an opening through the passivation layer and the insulating layer to expose the metal gate layer, and forming a gate electrode on the passivation layer and filling the opening.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method includes forming a first dielectric bonding layer over a first dielectric structure, which is disposed on a first substrate and surrounds a first plurality of interconnects. The first dielectric bonding layer is patterned to form a first recess exposing one of the first plurality of interconnects. A first conductive bonding segment is formed within the first recess. A second dielectric bonding layer is formed over a TSV extending through a second substrate. The second dielectric bonding layer is patterned to form a second recess exposing the TSV. A second conductive bonding segment is formed within the second recess. The first substrate is bonded to the second substrate along an interface comprising dielectric and conductive regions. The conductive region includes a conductive interface between the first and second conductive bonding segments.

Abstract: Devices and methods of manufacture for a deep trench layout area-saving semiconductor structure for use with bipolar-CMOS-DMOS (BCD) devices. A semiconductor device may comprise a first BCD device formed within a first perimeter of a first BCD layout area, and a deep trench isolation structure defining the first perimeter of the first BCD layout area, in which the deep trench isolation structure may comprise a first rounded corner that may define a first corner of the first BCD layout area. A semiconductor device may comprise, a substrate, BCD device formed on the substrate, and a deep trench isolation structure laterally surrounding the BCD device. The deep trench isolation structure, with respect to a top-down view, may comprise vertical portions, horizontal portions, a “T”-shaped intersection connecting at least one vertical portion and at least one horizontal portion, and a cross-shaped intersection connecting two vertical portions and two horizontal portions.

Abstract: Provided are actuation devices, virtual reality devices formed from the actuation devices, and related virtual reality methods. The devices may comprise a plurality of spatially distributed actuators, each actuator configured for interacting with a biological skin surface; a wireless controller configured to receive operative command signals to control each of the actuators; and a wireless power system to power the actuators. Also provided are unique layouts of multiple interconnected devices to achieve large area coverage.

Abstract: The present invention provides a computer-implemented method performed in an electronic device, wherein the computer-implemented method comprises the steps of: determining if an operating system of the electronic device enables a gaming mode; and if it is determined that the operating system of the electronic device enables the gaming mode, controlling a wireless communication module of the electronic device to not perform at least one operation that will decrease throughput of the wireless communication module; and if it is determined that the operating system of the electronic device does not enable the gaming mode, at least one operation that will decrease throughput of the wireless communication module is allowed to be executed by the wireless communication module.

Abstract: A beam measurement method, a network-side device, a terminal device, and a storage medium are provided. The method includes: sending configuration information to a terminal device, where the configuration information includes information related to channel state information reference signal CSI-RS resources that are used for beam measurement on an unlicensed frequency band UFB; and sending the CSI-RS resource to the terminal device based on the configuration information, so that the terminal device performs beam measurement on the UFB based on the configuration information and the CSI-RS resource.

Abstract: In an approach for using an open source of existing text labeling models to label sentences that need to be clustered with multiple external tags and then to use the tags as auxiliary information to perform the clustering at a dual level, a processor receives a set of text, wherein the set of text contains one or more sentences. A processor tags each sentence of the set of text with one or more tags using a plurality of open-source text classification models. A processor performs a preliminary clustering of one or more nodes under strict conditions using a canopy clustering algorithm.

Abstract: A fault detection method comprises the following steps. Receiving a first original sequence comprising a plurality of first data. Receiving a second original sequence comprising a plurality of second data. Aligning the first original sequence with the second original sequence according to trends of value changing of the first data and the second data. Performing an average operation on the aligned first original sequence and second original sequence to establish a standard sequence. Performing a difference operation between the first original sequence and the standard sequence to obtain a first total difference value. Performing a difference operation between the second original sequence and the standard sequence to obtain a second total difference value. When the first total difference value and/or the second total difference value is greater than an upper limit value, determining that the first original sequence and/or the second total difference value is abnormal.

Abstract: Embodiments of this application provide a method for subscribing to event streams. The method includes: A first device generates a first message used to subscribe to event streams, where the first message includes a group identifier, and the group identifier corresponds to a plurality of event streams; and the first device sends the first message to a second device, to obtain data of the plurality of event streams corresponding to the group identifier.

Abstract: The present disclosure provides GLP-1R agonists, and compositions, methods, and kits thereof. Such compounds are generally useful for treating a GLP-1R mediated disease or condition in a human.

Abstract: A delay estimation system estimates a delay of a DUT for an emulation system. The delay estimation system receives logic blocks of the DUT and a combinatorial path connecting one or more of the logic blocks. The system applies a delay model to a feature vector representing the combinatorial path, where the delay model can determine a delay of the combinatorial path. The delay model may be a machine learning model. The system generates a timing graph using the determined delay and provides the timing graph to a compiler to perform placement and routing of the DUT.

Abstract: Training data models using machine learning can include training a computer data model of data distribution using a training data set. The training data set includes training data and additional training data, and the training data and the additional training data being represented by layers of data representing the data distribution of the training data set. The computer data model using the additional training data is iteratively trained for each of the layers of the training data set. Statistical noise is added randomly to each of the layers of the training data set. Data variations are detected in each of the layers of the additional training data. The data variations are diluted in each of the additional layers of the training data, and the computer data model is retrained for the training data set using the diluted data variations in each of the layers of the additional training data.

Abstract: A computer-implemented process for modifying a training dataset includes the following operations. The training dataset is benchmarked using a State Of The Art (SOTA) neural network to determine a benchmark for the training dataset. The training set is divided into a plurality of slices. A sequence of a plurality of atomic operations are selected using a selection strategy generator operating on one of the plurality of slices. The sequence of the plurality of atomic operations is applied to modify the one of the plurality of slices to generate a revised one of the plurality of slices. Reverse reinforcement learning is performed on the revised one of the plurality of slices using the benchmark and the SOTA neural network. The training dataset is modified by replacing the one of the plurality of slices with the revised one of the plurality of slices to generate a modified training dataset.

Abstract: An embodiment of an adaptive video encoder may include technology to determine headset-related information including at least one of focus-related information and motion-related information, and determine one or more video encode parameters based on the headset-related information. Other embodiments are disclosed and claimed.