Patents by Inventor Yuan Xiao

Yuan Xiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF IDENTIFYING A VALUE OF AN UNKNOWN CIRCUIT COMPONENT IN AN ANALOG CIRCUIT
    Publication number: 20150370956
    Abstract: A method for identifying a value of an unknown circuit component for an analog signal having a known output profile in which a simulation list of the analog circuit is first created including the component with the unknown value. A transfer function for the known output value is then created using a programmed processor and the transfer function is then solved by the processor for the value of the unknown component. For nonlinear circuit components, a linear model is substituted for the nonlinear components prior to creating the simulation list.
    Type: Application
    Filed: June 23, 2014
    Publication date: December 24, 2015
    Inventors: Yuan Xiao, Donald J. McCune, Can Wang, Heming Chen, Sujit Phatak, Yasuhiro Ito
  • Semiconductor device and fabrication method thereof
    Patent number: 9209289
    Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a substrate structure, wherein the substrate structure includes a substrate and a fin-shaped barrier layer formed on a surface of the substrate; forming a quantum well (QW) material layer on a surface of the fin-shaped barrier layer; and forming a barrier material layer on the QW material layer.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: December 8, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: De Yuan Xiao
  • ELECTRIC MOTOR
    Publication number: 20150311762
    Abstract: An electric motor includes a stator and a rotor. The stator includes a stator core, a stator winding, a first insulating frame, a number of first insulating elements, and a number of second insulating elements. The stator core includes a number of teeth. Adjacent teeth form a winding passage defining a winding opening. Each first insulating element is assembled within the corresponding winding passage. Two end portions of each second insulating element are placed over the corresponding winding opening.
    Type: Application
    Filed: April 23, 2015
    Publication date: October 29, 2015
    Inventors: Jie CHAI, San Yuan XIAO
  • TRANSMISSION MODULE ASSEMBLY
    Publication number: 20150280376
    Abstract: A transmission module assembly comprises a cover and an electrical connector received in the cover. The cover includes a body defining a receiving cavity and a mating section extending forwardly from the body. The connector includes an insulating elongated housing and a number of terminals retained in the housing. Each terminal includes an engaging portion extending forwardly beyond the body into the mating section, a tail portion extending upwardly beyond the housing and a connecting portion retained in the housing. There is a gap between the body and the housing for pouring sealant thereinto. A tuber is defined between the housing and the body, and a pair of stoppers positioned at the body abut forwardly against two lateral sides of the housing in an elongated direction, which can prevent the housing from deforming when temperature changes.
    Type: Application
    Filed: March 31, 2015
    Publication date: October 1, 2015
    Inventors: XUE-YUAN XIAO, ZHANG-LAN XUE, ZI-QIANG ZHU
  • Permanent Magnet Brushless Motor
    Publication number: 20150280535
    Abstract: A permanent magnet brushless motor has a stator and a rotor. The stator has a yoke and s teeth extending from the yoke, forming a stator core, where s is an integer greater than four. Coils of a stator winding are wound about the teeth. The rotor has a shaft, a rotor core fixed to the shaft and a permanent magnet mounted to the rotor core. The permanent magnet forms p magnetic poles, where p is an even number greater than 2 but less than s. Each section of the permanent magnet corresponding to a respective magnetic pole is divided into n equal parts by n?1 magnet grooves, where n is an integer greater than 1 and p*n is an integral multiple of s. The magnet grooves significantly increase the detent torque of the motor.
    Type: Application
    Filed: March 16, 2015
    Publication date: October 1, 2015
    Inventors: Bo YANG, Gang LIU, Tao ZHANG, San Yuan XIAO, Wai Chiu TANG
  • SIGNAL TRANSMISSION MODULE WITH RELIABLE SEALING STRUCTURE
    Publication number: 20150280353
    Abstract: A signal transmission module includes a shell and a connector. The shell includes a box and a mating portion. The connector includes an insulative housing received in the box and a set of contacts. Each contact includes a middle portion, a contacting portion extending into the mating portion and a tail portion. A gap is formed between the insulative housing and the box for sealant being injected. The signal transmission module further includes a horizontal channel located between the insulative housing and the box for the sealant entering into and a vertical channel connecting the horizontal channel.
    Type: Application
    Filed: March 31, 2015
    Publication date: October 1, 2015
    Inventors: Xue-Yuan XIAO, Jia-Wei GU, Zhang-Lan XUE, Zi-Qiang ZHU
  • Transistor device and fabrication method
    Patent number: 9136183
    Abstract: Fabrication methods for junctionless transistor and complementary junctionless transistor. An isolation layer doped with a first-type ion is formed on a semiconductor substrate and an active layer doped with a second-type ion is formed on the isolation layer. The active layer includes a first portion between a second portion and a third portion of the active layer. Portions of the isolation layer under the second and third portions of the active layer are removed to suspend the second and third portions of the active layer. A gate structure is formed on the first portion of the active layer. A source and a drain are formed by doping the second portion and the third portion of the active layer with the second-type ion on both sides of the gate structure. The source and the drain have a same doping type as the first portion of the active layer.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: September 15, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: De Yuan Xiao
  • Screw retaining mechanism and PV junction box assembled with the screw retaining mechanism
    Patent number: 9099855
    Abstract: A screw retaining mechanism includes a hollow stud and a nut is matched with the hollow stud. The hollow stud has a plurality of elastic plates extending from a free end thereof and along a peripheral wall thereof. An opening is located between two adjacent elastic plates. An inner wall of the nut has a plurality of tubers protruding in the axial direction to match into the opening. The elastic plate defines a first side face and a second side face opposite to the first side face. Said first side face is used to guide the tubers into the opening and the second side face prevent the tuber fall off from the stud.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: August 4, 2015
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Xue-Yuan Xiao, Zhang-Lan Xue, Zi-Qiang Zhu
  • THREE-DIMENSIONAL QUANTUM WELL TRANSISTOR
    Publication number: 20150214302
    Abstract: Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.
    Type: Application
    Filed: April 10, 2015
    Publication date: July 30, 2015
    Inventor: DE YUAN XIAO
  • Three-dimensional quantum well transistor
    Patent number: 9093354
    Abstract: Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.
    Type: Grant
    Filed: April 10, 2015
    Date of Patent: July 28, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: De Yuan Xiao
  • METHOD AND APPARATUS FOR BYPASSING CASCADED H-BRIDGE (CHB) POWER CELLS AND POWER SUB CELL FOR MULTILEVEL INVERTER
    Publication number: 20150171733
    Abstract: Multilevel power converters, power cells and methods are presented for selectively bypassing a power stage of a multilevel inverter circuit, in which a single relay or contactor includes one or more normally closed output control contacts coupled between a given power cell switching circuit and the given power cell output, along with a normally open bypass contact coupled across the power stage output, with a local or central controller energizing the coil of the relay or contactor of a given cell to bypass that cell.
    Type: Application
    Filed: February 23, 2015
    Publication date: June 18, 2015
    Applicant: ROCKWELL AUTOMATION TECHNOLOGIES, INC.
    Inventors: Navid R. Zargari, Yuan Xiao, Lixiang Wei, Zhongyuan Cheng
  • Power converter and integrated DC choke therefor
    Patent number: 9054599
    Abstract: A power conversion system with multiple parallel connected motor drives including a plurality of rectifiers and a corresponding inverters connected by windings of a single common mode choke.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: June 9, 2015
    Assignee: Rockwell Automation Technologies, Inc.
    Inventors: Lixiang Wei, Yuan Xiao, Navid Zargari, Richard Lukaszewski
  • Method and apparatus for detecting power converter capacitor degradation using negative sequence currents
    Patent number: 9054589
    Abstract: Power converters and control techniques are presented in which capacitor degradation is detected according to negative sequence current by computing an uncompensated negative sequence current and a negative sequence voltage, compensating the negative sequence current based on the negative sequence voltage, comparing the compensated or uncompensated negative sequence current with an automatically calculated threshold and selectively identifying suspected degradation of one or more capacitors if the compensated negative sequence current exceeds the threshold value. The method can be used for power converters, control devices or protection relays for shunt capacitors or filters used in power systems.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: June 9, 2015
    Assignee: Rockwell Automation Technologies, Inc.
    Inventors: Zhongyuan Cheng, Yuan Xiao, Ghodratollah Esmaeili Rineh, Manish Pande, Navid Zargari
  • PERMANENT MAGNET ROTOR
    Publication number: 20150145367
    Abstract: A rotor for a brushless motor includes a shaft, a rotor core and a number of permanent magnets. The rotor core includes inner and outer annular portions. The inner annular portion has a central hole for receiving the shaft. The outer annular portion includes a number of sector segments arranged in a ring, with adjacent sector segments defining a slot there between for receiving a corresponding permanent magnet. Radially outer ends of adjacent sector segments are interconnected by a connector. The sector segments include first sector segments and second sector segments arranged alternately. The first sector segments are separated from the inner annular portion. The second sector segments are each connected to the inner annular portion by connecting arms.
    Type: Application
    Filed: November 28, 2014
    Publication date: May 28, 2015
    Inventors: Yue LI, Chui You ZHOU, Jie CHAI, Kwong Yip POON, San Yuan XIAO, Han HE
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150129926
    Abstract: A field effect transistor is provided. The field effect transistor includes a semiconductor region formed on a substrate, wherein the semiconductor region comprises an undoped channel region, a source region including a first dopant type, and a drain region including a second dopant type, and wherein the channel region is formed of a group III-V compound semiconductor material. The field effect transistor further includes a high-K gate formed on the channel region, wherein the high-K gate is configured to generate electron tunneling between the source region and the drain region when a gate voltage is applied, and wherein a first contact surface between the source region and the channel region and a second contact surface between the drain region and the channel region are inclined.
    Type: Application
    Filed: February 14, 2014
    Publication date: May 14, 2015
    Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: De Yuan XIAO
  • Three-dimensional quantum well transistor and fabrication method
    Patent number: 9029222
    Abstract: Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: May 12, 2015
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: De Yuan Xiao
  • Method and apparatus for bypassing Cascaded H-Bridge (CHB) power cells and power sub cell for multilevel inverter
    Patent number: 9007787
    Abstract: Bypassing methods and apparatus are presented along with power cells and sub cells for multilevel inverters in which DC current flow into a DC link capacitance is interrupted and a bypass switch is closed across a power cell or sub cell output to selectively bypass a power stage of a multilevel inverter.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: April 14, 2015
    Assignee: Rockwell Automation Technologies, Inc.
    Inventors: Navid Zargari, Yuan Xiao, Lixiang Wei
  • Junction box for photovoltaic module
    Patent number: 8998635
    Abstract: A junction box includes a cable connecting box, a cover covering the cable connecting box and a cable electrically connecting with the cable connecting box. The cable connecting box including an insulative box and a wire connecting module, the insulative box comprising a plurality of walls extending upwardly and a receiving cavity surround by the walls, the walls including a front wall defining a plurality of mounting holes for the cable passing through. The cover includes a plurality of separating walls extending downwardly from a peripheral of the cover to engage with the walls of the insulative box and a pretending wall being parallel to the separating wall and located in front of the front wall. The adding pretending wall provides a longer distance for the junction box to ensure a safe creepage distance for the user to use the junction box.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: April 7, 2015
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Yuan Xiao, Hong-Qiang Han, Zi-Qiang Zhu
  • Junction box having improved clips
    Patent number: 8963000
    Abstract: A junction box (100) includes a cable connecting box, a cover (2) covering the cable connecting box, and a cable (4) connecting with the cable connecting box. The cable (4) connecting box has an insulative block (5), a number of contacting foils (6), and a number of diodes (31) connecting adjacent contacting foils (6). The junction box (100) further includes a plurality of clips (9) mounted in the insulative block (5) and electrically connecting with the contacting foils (6). The clip (9) includes a clamp spring (91) and an elastic plate (92) received in the clamp spring (91) to resist the clamping spring (91). As a result, the clamp spring (91) will not resist the cable connecting box so as to improve an using life of the junction box (100).
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: February 24, 2015
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Xue-Yuan Xiao, Hong-Qiang Han, Zi-Qiang Zhu
  • SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20150034906
    Abstract: A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate. A QW material layer is formed on the surface of the fin-shaped buffer layer. A barrier material layer is formed on the QW material layer. The QW material layer is suitable for forming an electron gas therein. Thereby the short-channel effect is improved, while high mobility of the semiconductor device is guaranteed. In addition, according to the present disclosure, thermal dissipation of the semiconductor device may be improved, and thus performance and stability of the device may be improved.
    Type: Application
    Filed: May 19, 2014
    Publication date: February 5, 2015
    Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: De Yuan XIAO