Abstract: An online concierge system assists users in identifying additional information about items in an image. Image regions are identified in the image that may correspond to unknown items and an item search space is determined for detecting items in the image regions based on a context of the image, such as items in a warehouse or a list of items delivered to a customer. The identified items are used to retrieve relevant item information that is included in a prompt for a language model to extract relevant information for the item. As such, the process may automatically process the image into relevant textual information about the pictured items. Applications may be used to assist vision-impaired users in distinguishing delivered items or quickly identifying and evaluating relevant information about items.

Abstract: An online concierge system trains a fine-tuned generative image model for distinct categories of items based on a generative image model that takes a textual query as input and outputs and an associated image. Training of the fine-tuned generative image model is additionally based on a small set of representative images associated with the various categories, as well as textual tokens associated with the categories. Once trained, the fine-tuned generative image model can be used to generate realistic representative images for items in a database of the online concierge system that are lacking associated images. The fine-tuned model permits the generation of different variants of an item, such as different quantities or amounts, different packaging or packing density, and the like.

Abstract: An online system performs a task in conjunction with the model serving system or the interface system. The system generates a first prompt for input to a machine-learned language model, which specifies contextual information and a first request to generate a theme. The system provides the first prompt to a model serving system for execution by the machine-learned language model, receives a first response, and generates a second prompt. The second prompt specifies the theme and a second request to generate a third prompt for input to an image generation model that includes a third request to generate one or more images of one or more items associated with the theme. The system receives the third prompt by executing the model on the second prompt, provides the third prompt to the image generation model, and receives one or more images for presentation.

Abstract: Responsive to an input query from a user, an online system presents a list of recommended items that are related to the input query. The input query may be formulated as a natural language query. The online system performs an inference task in conjunction with the model serving system to generate one or more additional queries that are related to the input query and/or are otherwise related to the recommended items presented in response to the input query. The additional queries may be presented to the user in conjunction with the list of recommended items.

Abstract: A semiconductor device for reducing a switching loss includes a drain metal. A silicon substrate of a first conductive type is provided on the drain metal. An epitaxial layer of the first conductive type is provided on the silicon substrate of the first conductive type. A pillar of the first conductive type and a pillar of a second conductive type are arranged in the epitaxial layer of the first conductive type. A body region of the second conductive type is provided on a surface of each pillar. A heavily doped source region of the first conductive type and a heavily doped source region of the second conductive type are arranged in the body region of the second conductive type. A gate trench is formed in the pillar of the first conductive type. Discrete gate polycrystalline silicon is provided in the gate trench.

Abstract: A semiconductor device for reducing a switching loss includes a drain metal. A silicon substrate of a first conductive type is provided on the drain metal. An epitaxial layer of the first conductive type is provided on the silicon substrate of the first conductive type. A pillar of the first conductive type and a pillar of a second conductive type are arranged in the epitaxial layer of the first conductive type. A body region of the second conductive type is provided on a surface of each pillar. A heavily doped source region of the first conductive type and a heavily doped source region of the second conductive type are arranged in the body region of the second conductive type. A gate trench is formed in the pillar of the first conductive type. Discrete gate polycrystalline silicon is provided in the gate trench.

Abstract: A silicon carbide diode having a high surge current capability, and including a semiconductor base plate. The semiconductor base plate includes an N-type silicon carbide substrate and an N-type silicon carbide epitaxial layer located on the N-type silicon carbide substrate. The upper portion of the N-type silicon carbide epitaxial layer is provided with a plurality of P-type well regions. The N-type high resistance region is provided under the P-type well region or on the lower surface of the P-type well region. The resistivity of the N-type high resistance region is greater than the resistivity of the N-type silicon carbide epitaxial layer. The N-type high resistance region is provided under the P-type well region, and a plurality of grooves are provided in the P-type well region or a plurality of block-shaped P-type regions uniformly arranged at intervals are provided in the N-type high resistance region.

Abstract: A silicon carbide diode having a high surge current capability, and including a semiconductor base plate. The semiconductor base plate includes an N-type silicon carbide substrate and an N-type silicon carbide epitaxial layer located on the N-type silicon carbide substrate. The upper portion of the N-type silicon carbide epitaxial layer is provided with a plurality of P-type well regions. The N-type high resistance region is provided under the P-type well region or on the lower surface of the P-type well region. The resistivity of the N-type high resistance region is greater than the resistivity of the N-type silicon carbide epitaxial layer. The N-type high resistance region is provided under the P-type well region, and a plurality of grooves are provided in the P-type well region or a plurality of block-shaped P-type regions uniformly arranged at intervals are provided in the N-type high resistance region.