Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: The present invention discloses a fabrication method and use of a ?40 mm large-size and high-contrast fiber optic image inverter, belonging to the field of manufacturing of fiber optic imaging elements. The light-absorbing glass for preparing the ?40 mm large-size and high-contrast fiber optic image inverter consists of the following components in molar percentage: SiO2 60-69.9, Al2O3 1.0-10.0, B2O3 10.1-15.0, Na2O 1.0-8.0, K2O 3.0-10.0, MgO 0.1-1.0, CaO 0.5-5.0, ZnO 0-0.1, TiO2 0-0.1, ZrO2 0.1-1.0, Fe2O3 3.0-6.5, Co2O3 0.1-0.5, V2O5 0.51-1.5 and MoO3 0.1-1.0. The fiber optic image inverter has the advantages of low crosstalk of stray light, high resolution and high contrast.

Abstract: A cost estimation tool in a system for implementing an operation unit graph on a reconfigurable processor is presented as well as a method of operating a cost estimation tool for estimating a cost of implementing an operation unit graph. The operation unit graph may include first and second logical units that perform first and second data operations and have first and second ports, respectively, coupled by a logical edge, on a reconfigurable processor. The method includes receiving the operation unit graph, determining first and second upper bandwidth limits of the first and second ports, respectively, determining a logical edge bandwidth of the logical edge based on the first and second upper bandwidth limits, determining a timing group for the logical edge, and providing the logical edge bandwidth and the timing group as a cost estimation of implementing the operation unit graph on the reconfigurable processor.

Abstract: A system with a cost estimation tool for estimating a realized bandwidth consumption of a logical edge between a logical producer unit and a logical consumer unit of an operation unit graph during placement and routing of the logical producer unit, the logical consumer unit, and the logical edge onto a reconfigurable processor is presented as well as a method of operating such a cost estimation tool and a non-transitory computer-readable storage medium including instructions that, when executed by a processing unit, cause the processing unit to operate such a cost estimation tool The cost estimation tool may be configured to determine the realized bandwidth consumption of the tentative assignment based on an upper bandwidth limit of the logical edge, an end-to-end bandwidth, a scaling factor of a realized bandwidth, and a congestion estimation of the physical link.

Abstract: A cost estimation tool in a system for implementing an operation unit graph on a reconfigurable processor is presented as well as a method of operating a cost estimation tool for determining scaled logical edge bandwidths in an operation unit graph in preparation of placing and routing the operation unit graph onto a reconfigurable processor. The cost estimation tool may be configured to receive the operation unit graph, divide the operation unit graph in first and second subgraphs, determine maximum latencies of the first and second subgraphs, and determine a scaled logical edge bandwidth of a logical edge that couples a first logical unit of M logical units in the first subgraph with a second logical unit of N logical units in the first subgraph based on M, N, and scaled bandwidth limits of the M and N logical units.

Abstract: A method for training a model, a method for controlling an object, an apparatus, a medium, and a device. The method includes acquiring an interaction sequence generated by an interaction between a first virtual object and a second virtual object in a virtual environment; acquiring a training reward weight parameter corresponding to each interaction sequence; determining a target return value corresponding to each of the sampled data, according to the training reward weight parameter corresponding to the interaction sequence and the return value in the interaction sequence; determining a target loss of the training deep reinforcement learning model, according to an action-value predicted value determined based on a state feature and a decision action of each of the sampled data and the target return value corresponding to the sampled data; and training the training deep reinforcement learning model based on the target loss.

Abstract: The present disclosure discloses an injection molding method for fabricating a transparent device, and belongs to the technical field of material processing. The method comprises: preparing a nano-microsphere structural polymer material from a long-chain polymer material; obtaining a glass transition temperature and a viscous flow transition temperature of the nano-microsphere structural polymer material; obtaining a processing temperature of the nano-microsphere structural polymer material according to the glass transition temperature and the viscous flow transition temperature; drying the nano-microsphere structural polymer material; plasticizing the dried nano-microsphere structural polymer material according to the processing temperature; filling the plasticized nano-microsphere structural polymer material; cooling the filled nano-microsphere structural polymer material; and demolding the cooled nano-microsphere structural polymer material to form a transparent device.

Abstract: A training method for a neural network includes determining first disassembly paths of a plurality of first molecules, and obtaining a first cost dictionary based on the first disassembly paths of the first molecules. The method also includes determining molecular expression information of second molecules based on the first disassembly paths of the first molecules, and determining a plurality of third molecules from the second molecules, each of the third molecules representing a class of the second molecules. The method further includes obtaining a second cost dictionary based on second disassembly paths of the third molecules, and performing training based on the first cost dictionary and the second cost dictionary to obtain a target neural network. The target neural network being configured to output cost value information corresponding to a target molecule according to input molecular expression information of the target molecule.

Abstract: A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure.

Abstract: Packaging methods and structures for lateral high voltage gallium nitride (GaN) devices achieve electrical isolation while also maintaining thermal dissipation. The electrical isolation reduces or eliminates vertical leakage current, improving high voltage performance. The packages may use or be compatible standards such as JEDEC, which reduces packaging cost and facilitates implementation of the packaged devices in conventional circuit design approaches.

Abstract: The present disclosure discloses an injection molding method for fabricating a transparent device, and belongs to the technical field of material processing. The method comprises: preparing a nano-microsphere structural polymer material from a long-chain polymer material; obtaining a glass transition temperature and a viscous flow transition temperature of the nano-microsphere structural polymer material; obtaining a processing temperature of the nano-microsphere structural polymer material according to the glass transition temperature and the viscous flow transition temperature; drying the nano-microsphere structural polymer material; plasticizing the dried nano-microsphere structural polymer material according to the processing temperature; filling the plasticized nano-microsphere structural polymer material; cooling the filled nano-microsphere structural polymer material; and demolding the cooled nano-microsphere structural polymer material to form a transparent device.

Abstract: A packaged GaN semiconductor device with improved heat dissipation is provided. A GaN device is packaged on a printed circuit board (PCB) with a vertical side of the device, and optionally the back side of the device, in thermal contact with the PCB. The packaging is compatible with surface mount technologies such as land grid array (LGA), ball grid array (BGA), and other formats. Thermal contact between the PCB and a vertical side of the device, and optionally the back side of the device, is made through solder. The solder used for the thermal contact may also connect a source terminal of the device, which also improves electrical stability of the device. The packaging is particularly suitable for GaN HEMT devices.

Abstract: Use of gallium nitride (GaN) semiconductor material for power devices is challenging due to low yield caused by high defect density on the wafer. Device layout on the wafer, chip probing, and device packaging increase the yield of large area power devices. Device dies containing a plurality of lower-power sub-devices are used to achieve high power ratings, by connecting only functional sub-devices together in the package, while being tolerant of defective sub-devices by selectively excluding the defective sub-devices. The packages and methods are particularly relevant to GaN power switching devices such as high electron mobility transistors (GaN HEMT).

Abstract: A gate driver circuit for a gallium nitride (GaN) power transistor includes a RS-flipflop that receives a first pulse train at an S input terminal and a second pulse train at an R input terminal, and produces an output pulse train, and an amplifier that amplifies the output pulse train and produces a gate driver signal for the GaN power transistor. The RS-flipflop and the amplifier may be implemented together on a GaN monolithic integrated circuit, optionally together with the GaN power transistor. The GaN power transistor may be a high-side switch of a half-bridge circuit. The RS-flipflop may be implemented with enhancement mode and depletion mode GaN high electron mobility transistors (HEMTs). Embodiments avoid drawbacks of prior hybrid (e.g., silicon-GaN) approaches, such as parasitic inductances from bonding wires and on-board metal traces, especially at high operating frequencies, as well as reduce implementation cost and improve performance.

Abstract: Packaging methods and structures for lateral high voltage gallium nitride (GaN) devices achieve electrical isolation while also maintaining thermal dissipation. The electrical isolation reduces or eliminates vertical leakage current, improving high voltage performance. The packages may use or be compatible standards such as JEDEC, which reduces packaging cost and facilitates implementation of the packaged devices in conventional circuit design approaches.

Abstract: Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

Abstract: Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

Abstract: The invention features a method of vaccinating a mammal against Staphylococcus aureus which includes the steps of: a) identifying a mammal at risk for the development of a Staphylococcus aureus skin or soft tissue infection; and b) administering to said mammal an immunogenic amount of a vaccine that includes a polypeptide including an isolated agglutinin-like sequence (Als) 3 protein (Als3p), or an immunogenic fragment thereof, in a pharmaceutically acceptable medium.

Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.