Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.

Abstract: Approaches, techniques, and mechanisms are disclosed for accessing AI services from one region to another region. An artificial intelligence (AI) service director is configured with mappings from domain names of AI cloud engines to IP addresses of edge nodes of an AI delivery edge network. The AI cloud engines are located in an AI source region. The AI delivery edge network is deployed in a non-AI-source region. An AI application, which accesses AI services using a domain name of an AI cloud engine in the AI cloud engines located in the AI source region, is redirected to an edge node in the edge nodes of the AI delivery edge network located in the non-AI-source region. The AI application is hosted in the non-AI-source region. The AI services is then provided, by way of the edge node located in the non-AI-source region, to the AI application.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for boosting a voltage of an electrode in a processing chamber. An example plasma processing system includes a processing chamber, a plurality of switches, an electrode disposed in the processing chamber, a voltage source, and a capacitive element. The voltage source is selectively coupled to the electrode via one of the plurality of switches. The capacitive element is selectively coupled to the electrode via one of the plurality of switches. The capacitive element and the voltage source are coupled to the electrode in parallel. The plurality of switches are configured to couple the capacitive element and the voltage source to the electrode during a first phase, couple the capacitive element and the electrode to a ground node during a second phase, and couple the capacitive element to the electrode during a third phase.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: The disclosed subject matter relates to a system and method for selecting/recommending ads based on a contextual bandit approach. The disclosed approach leverages various embedding vectors of item, search, page taxonomy trained based on traffic data via advanced deep learning models, and uses model signals (e.g. historical CTR, item price, rating, quality) from other ad placements. The learning mechanism on top of the current methodology to automatic chooses the best feature sets and adjust model performance over time. The contextual bandit model performs better with respect to CTR than the Thompson Sampling model, and achieves lower regret and faster convergence over time.

Abstract: Approaches, techniques, and mechanisms are disclosed for accessing AI services from one region to another region. An artificial intelligence (AI) service director is configured with mappings from domain names of AI cloud engines to IP addresses of edge nodes of an AI delivery edge network. The AI cloud engines are located in an AI source region. The AI delivery edge network is deployed in a non-AI-source region. An AI application, which accesses AI services using a domain name of an AI cloud engine in the AI cloud engines located in the AI source region, is redirected to an edge node in the edge nodes of the AI delivery edge network located in the non-AI-source region. The AI application is hosted in the non-AI-source region. The AI services is then provided, by way of the edge node located in the non-AI-source region, to the AI application.

Abstract: Methods and apparatus for plasma processing substrate are provided herein. The method comprises supplying from an RF power source RF power, measuring at the RF power source a reflected power at the first power level, comparing the measured reflected power to a first threshold, transmitting a result of the comparison to a controller, setting at least one variable capacitor to a first position based on the comparison of the measured reflected power at the first power level to the first threshold, supplying from the RF power source the RF power at a second power level for plasma processing the substrate, measuring at the RF power source the reflected power at the second power level, comparing the measured reflected power at the second power level to a second threshold different from the first threshold, transmitting a result of the comparison, setting at the matching network the at least one variable capacitor to a second position.

Abstract: The present disclosure provides methods for treating a human patient diagnosed with a cancer, comprising administering a therapeutically effective amount of a PR.MTS (protein arginine methyltransferase 5) inhibitor, certain methods comprising (i) administering to the patient initial doses of at least about 0.1 mg per day of the PRMT5 inhibitor that is (1S,2R,3 S,SR)-3-(2-(2-amino-3-bromoquinolin-7-yl)ethyl)-5-(4-amino-7H-pyrrolo[2,3-d]pyrimidin-7-yl)cyclopentane-1,2-diol or a pharmaceutically acceptable addition salt or solvate thereof for an initial dosing period of about 5 to about 20 days; and (ii) administering to the patient subsequent doses of at least about 0.1 mg per day of the PRMT5 inhibitor for one or more subsequent dosing periods of about 5 to about 20 days each. In these methods, a first subsequent dosing period is separated in time from the initial dosing period by at least about 5 days and the subsequent dosing periods are separated in time from each other by at least about 5 days.

Abstract: Embodiments disclosed herein may further comprise a semiconductor processing tool. In an embodiment, the tool comprises a chamber with a chuck within the chamber. In an embodiment, the chuck is an electrostatic chuck. The tool may further comprise a laser configured to propagate a laser beam through a viewport through a chamber wall, with a beam splitter configured to separate the laser beam into a plurality of parallel beams. In an embodiment, the plurality of parallel beams are propagated towards the chuck. In an embodiment, the processing tool further comprises a camera configured to image the plurality of parallel beams, where the plurality of parallel beams are configured to reflect off a substrate on the chuck towards the camera.

Abstract: A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.

Abstract: Embodiments of the present disclosure generally include an apparatus and methods for measuring and controlling in real-time a potential formed on a substrate in a plasma processing chamber during plasma processing. Embodiments of the disclosure include a plasma processing system that includes a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a substrate supporting surface and a dielectric layer disposed between a first electrode and the substrate supporting surface. The plasma processing system further includes a first generator coupled to a second electrode of the plasma processing system, and a sensor disposed a first distance from the substrate supporting surface. The first generator is configured to generate a plasma within the processing volume. The first electrode is disposed a second distance from the substrate supporting surface, and the first distance is less than the second distance.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for controlling ion energy distribution in a processing chamber. One embodiment of the present disclosure is directed to a method for plasma processing. The method generally includes: determining a voltage and/or power associated with a bias signal to be applied to a first electrode of a processing chamber, the voltage being determined based on a pressure inside a processing region of the processing chamber such that the voltage is insufficient to generate a plasma inside the chamber by application of the voltage and/or power to the first electrode; applying the first bias signal in accordance with the determined voltage and/or power to the first electrode; and applying a second bias signal to a second electrode of the processing chamber, wherein the second bias signal is configured to generate a plasma in the processing region and the first bias is applied while the second bias is applied.

Abstract: Embodiments provide reinforcement learning (RL) techniques for transferring machine learning obtained in one domain to another. A neural network (NN) of a source domain may be trained using training data associated with that domain. In some cases, the training data is inaccessible to a target domain for which a similar NN is desired. A number of target NNs may be initialized with a portion of the parameters transferred from the source NN. A computing agent may utilize RL techniques to train the target NNs using training data of the target domain. The target NN with the most beneficial subset of transferred parameters may be selected. By using the RL techniques to identify the most advantageous combination of transferred parameters, a similarly accurate NN may be provided in the target domain at a fraction of the otherwise needed time and without accessing the original training data.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for plasma processing substrate are provided herein. The method comprises supplying from an RF power source RF power, measuring at the RF power source a reflected power at the first power level, comparing the measured reflected power to a first threshold, transmitting a result of the comparison to a controller, setting at least one variable capacitor to a first position based on the comparison of the measured reflected power at the first power level to the first threshold, supplying from the RF power source the RF power at a second power level for plasma processing the substrate, measuring at the RF power source the reflected power at the second power level, comparing the measured reflected power at the second power level to a second threshold different from the first threshold, transmitting a result of the comparison, setting at the matching network the at least one variable capacitor to a second position.

Abstract: The present invention discloses a selenium-doped MXene composite nano-material and a preparation method thereof, comprising the following steps: (1) adding MXene and an organic selenium source into a dispersant, and stirring to prepare a dispersion with a concentration of 1 mg/ml to 100 mg/ml; (2) transferring the dispersion into a reaction kettle, then heating, reacting, and then naturally cooling to a room temperature; (3) washing the product obtained in the step (2) with a cleaning agent, then centrifuging to collect a precipitate, and drying the precipitate under vacuum; and (4) placing the sample obtained in the step (3) into a tubular furnace for calcination, introducing protective gas, heating, and then cooling to a room temperature to obtain the selenium-doped MXene composite nano-material. The material prepared by the present invention has high specific surface area, good electrical conductivity, cycle stability performance, rate performance and high theoretical specific capacity.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for distortion current mitigation. An example plasma processing system includes a voltage source coupled to an input node, which is coupled to an electrode disposed within a processing chamber, wherein the voltage source is configured to generate a pulsed voltage signal at the input node; a signal generator having an output, wherein the RF signal generator is configured to deliver a first RF signal at a first RF frequency to the input node; a bandpass filter coupled between the output of the signal generator and the input node, wherein the bandpass filter is configured to attenuate second RF signals that are outside a range of frequencies including the first RF frequency of the first RF signal; and an impedance matching circuit coupled between the bandpass filter and the input node.

Abstract: A chest binder includes a front part and a back part. The front part includes a front piece including at least one layer of elastic fabric, and a percent elongation of the elastic fabric is between 1% and 5%. The back part includes an X-shaped back piece and a tightenable piece connected to the lower end of the back piece. The back piece includes an inner layer and a surface layer attached to the inner layer to form an integrated structure. The inner layer includes a left back strap and a right back strap. The tightenable piece is connected to the left back strap and the right back strap, and two sides of the tightenable piece are connected to two sides of the front piece, respectively. The front piece includes a left front strap and a right front strap.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pseudo-staircase waveform that includes coupling, during a first phase of generating a waveform, a first voltage supply to an output node; coupling, during a second phase of generating the waveform, a first capacitor between the output node and an electrical ground node; and coupling during a third phase of generating the waveform, the first capacitor and a second capacitor in a series path between the output node and the electrical ground node.

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.