Patents by Inventor Yue-Lin Huang

Yue-Lin Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell with functions of storage element and selector
    Patent number: 9786842
    Abstract: A single memory cell has the functions of a storage element and a selector. The memory cell includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. The tunneling structure is a stack structure including a first material layer, a second material layer and a third material layer. By adjusting a bias voltage that is applied to the P-type layer and the N-type layer, the tunneling structure is controlled to be in the amorphous state or the crystalline state. Consequently, the memory cell has the memorizing and storing functions. The memory cell has the P-type layer, the tunneling structure and the N-type layer. By adjusting the bias voltage, the function of the selector is achieved.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: October 10, 2017
    Assignee: OPTO TECH CORPORATION
    Inventors: Ming-Yi Yan, Jhih-You Lu, Hsien-Chih Huang, Yun-Shiuan Li, Jiun-Yun Li, I-Chun Cheng, Chih-Ming Lai, Yue-Lin Huang, Lung-Han Peng