Patents by Inventor Yueh-Chang Lin

Yueh-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240243004
    Abstract: A semiconductor structure includes a substrate having a first device region and a second device region in proximity to the first device region. A first trench isolation structure is disposed in the substrate between the first device region and the second device region. The first trench isolation structure includes a first bottom surface within the first device region and a second bottom surface within the second device region. The first bottom surface is lower than the second bottom surface. The first trench isolation structure includes a first top surface within the first device region and a second top surface within the second device region. The first top surface is coplanar with the second top surface.
    Type: Application
    Filed: February 13, 2023
    Publication date: July 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Ling Wang, Ping-Hung Chiang, Ta-Wei Chiu, Chia-Wen Lu, Wei-Lun Huang, Yueh-Chang Lin