Patents by Inventor Yueh-Ting YANG

Yueh-Ting YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10930527
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: February 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
  • Publication number: 20200312685
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.
    Type: Application
    Filed: June 12, 2020
    Publication date: October 1, 2020
    Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
  • Patent number: 10741426
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
  • Publication number: 20190096714
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.
    Type: Application
    Filed: February 27, 2018
    Publication date: March 28, 2019
    Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
  • Patent number: 10029918
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The lithium iron phosphate powders are represented by the following formula (II): LiFe(1-a)MaPO4 ??(II) wherein, M, and a are defined in the specification, the lithium iron phosphate powders are composed of plural flake powders, the length of each of the flake powders is 0.1-10 ?m, and a ratio of the length and the thickness of each of the flake powder is in a range from 11 to 400.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: July 24, 2018
    Assignee: National Tsing Hua University
    Inventors: Lih-Hsin Chou, Bing-Kai Chen, Hsin-Hsu Chu, Yueh-Ting Yang
  • Publication number: 20180118569
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The lithium iron phosphate powders are represented by the following formula (II): LiFe(1-a)MaPO4 ??(II) wherein, M, and a are defined in the specification, the lithium iron phosphate powders are composed of plural flake powders, the length of each of the flake powders is 0.1-10 ?m, and a ratio of the length and the thickness of each of the flake powder is in a range from 11 to 400.
    Type: Application
    Filed: December 22, 2017
    Publication date: May 3, 2018
    Inventors: Lih-Hsin CHOU, Bing-Kai CHEN, Hsin-Hsu CHU, Yueh-Ting YANG
  • Patent number: 9884765
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The lithium iron phosphate powders are represented by the following formula (II): LiFe(1-a)MaPO4??(II) wherein, M, and a are defined in the specification, the lithium iron phosphate powders are composed of plural flake powders, the length of each of the flake powders is 0.1-10 ?m, and a ratio of the length and the thickness of each of the flake powder is in a range from 11 to 400.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: February 6, 2018
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Lih-Hsin Chou, Bing-Kai Chen, Hsin-Hsu Chu, Yueh-Ting Yang
  • Publication number: 20150232338
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The lithium iron phosphate powders are represented by the following formula (II): LiFe(1-a)MaPO4??(II) wherein, M, and a are defined in the specification, the lithium iron phosphate powders are composed of plural flake powders, the length of each of the flake powders is 0.1-10 ?m, and a ratio of the length and the thickness of each of the flake powder is in a range from 11 to 400.
    Type: Application
    Filed: May 6, 2015
    Publication date: August 20, 2015
    Inventors: Lih-Hsin CHOU, Bing-Kai CHEN, Hsin-Hsu CHU, Yueh-Ting YANG
  • Patent number: 9059464
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The lithium iron phosphate powders are represented by the following formula (II): LiFe(1-a)MaPO4??(II) wherein, M, and a are defined in the specification, the lithium iron phosphate powders are composed of plural flake powders, the length of each of the flake powders is 0.1-10 ?m, and a ratio of the length and the thickness of each of the flake powder is in a range from 11 to 400.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: June 16, 2015
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Lih-Hsin Chou, Bing-Kai Chen, Hsin-Hsu Chu, Yueh-Ting Yang
  • Publication number: 20140045066
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The ferrous (II) phosphate powders are represented by the following formula (I): Fe(3-x)Mx(PO4)2.yH2O??(I) wherein, M, x, and y are defined in the specification, the ferrous (II) phosphate powders are composed of plural flake powders, and the length of each of the flake powders is 0.2-10 ?m.
    Type: Application
    Filed: October 18, 2013
    Publication date: February 13, 2014
    Applicant: National Tsing Hua University
    Inventors: Lih-Hsin CHOU, Hsin-Hsu CHU, Bing-Kai CHEN, Yueh-Ting YANG
  • Patent number: 8586242
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The ferrous (II) phosphate powders are represented by the following formula (I): Fe(3-x)Mx(PO4)2.yH2O??(I) wherein, M, x, and y are defined in the specification, the ferrous (II) phosphate powders are composed of plural flake powders, and the length of each of the flake powders is 0.2-10 ?m.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: November 19, 2013
    Assignee: National Tsing Hua University
    Inventors: Lih-Hsin Chou, Hisn-Hsu Chu, Bing-Kai Chen, Yueh-ting Yang
  • Publication number: 20130266864
    Abstract: Ferrous (II) phosphate (Fe3(PO4)2) powders, lithium iron phosphate (LiFePO4) powders for a Li-ion battery and methods for manufacturing the same are provided. The ferrous (II) phosphate powders are represented by the following formula (I): Fe(3-x)Mx(PO4)2.yH2O??(I) wherein, M, x, and y are defined in the specification, the ferrous (II) phosphate powders are composed of plural flake powders, and the length of each of the flake powders is 0.2-10 ?m.
    Type: Application
    Filed: June 3, 2013
    Publication date: October 10, 2013
    Inventors: Lih-Hsin CHOU, Hsin-Hsu CHU, Bing-Kai CHEN, Yueh-Ting YANG