Abstract: A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.

Abstract: Devices and methods are described for reducing etching due to galvanic effect within a printed circuit board that may be used, for example, in a data storage device, such as a card-type data storage device. Specifically, a contact trace is coupled to a contact finger that has a substantially larger surface area than the contact trance, and that is configured to couple the data storage device to a host device. The contact trace is electrically isolated from the rest of the circuitry during a fabrication process. The contact finger and an exposed portion of the contact trace are plated with a common material to reduce galvanic etching of the contact trace during fabrication. The contact trace is then connected to an impedance trace though at least one of a component and a bond wire.