Patents by Inventor Yuh-Han Shing

Yuh-Han Shing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5645900
    Abstract: Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.
    Type: Grant
    Filed: October 25, 1994
    Date of Patent: July 8, 1997
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Tiong P. Ong, Yuh-han Shing
  • Patent number: 5639551
    Abstract: A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition.The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride.The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.
    Type: Grant
    Filed: October 3, 1995
    Date of Patent: June 17, 1997
    Assignee: California Institute of Technology
    Inventors: Tiong P. Ong, Yuh-Han Shing
  • Patent number: 5597625
    Abstract: A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition.The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride.The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.
    Type: Grant
    Filed: October 3, 1995
    Date of Patent: January 28, 1997
    Assignee: California Institute of Technology
    Inventors: Tiong P. Ong, Yuh-Han Shing
  • Patent number: 5427827
    Abstract: Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.
    Type: Grant
    Filed: May 21, 1992
    Date of Patent: June 27, 1995
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Yuh-Han Shing, Frederick S. Pool
  • Patent number: 4623601
    Abstract: A photoconductive device of decreased resistivity is provided by using at least one zinc oxide transparent conductive layer in conjunction with a thin film amorphous silicon photoconductor. The zinc oxide layer can be used as the front contact, the back contact or both the front and back contacts of the photoconductive device.
    Type: Grant
    Filed: June 4, 1985
    Date of Patent: November 18, 1986
    Assignee: Atlantic Richfield Company
    Inventors: Steven C. Lewis, Robert B. Love, Stephen C. Miller, Yuh-han Shing, John W. Sibert, David P. Tanner, Nang T. Tran
  • Patent number: 4611091
    Abstract: A thin film photovoltaic device having first layer of copper indium selenide, a second layer of cadmium sulfide having a thickness less than 2500 angstroms, and a third layer of conducting wide bandgap semiconductor such as zinc oxide. The transparent third layer allows good transmission of blue light to the junction region while fully depleting the junction area to improve device voltage.
    Type: Grant
    Filed: December 6, 1984
    Date of Patent: September 9, 1986
    Assignee: Atlantic Richfield Company
    Inventors: Uppala V. Choudary, Yuh-Han Shing, Richard R. Potter, James H. Ermer, Vijay K. Kapur