Abstract: A vaporization device includes a vaporization amount adjusting plate that covers a surface of a solid raw material, and an exhaust passage that exhausts a carrier gas that flows while being faced with the vaporization amount adjusting plate. The vaporization amount adjusting plate has a plurality of through holes. An aperture ratio per unit area in the adjusting plate varies along a flowing direction of the carrier gas. The carrier gas is vaporized from the solid raw material and carries a predetermined raw material that has passed through the plurality of through holes.

Abstract: A substrate processing apparatus according to an aspect of the present disclosure is an apparatus that deposits a film on a substrate disposed in a processing chamber, and includes a process gas supply configured to supply, into the processing chamber, a process gas including a source gas and a carrier gas that carries the source gas, a vacuum pump configured to exhaust an interior of the processing chamber, and a purge gas supply configured to supply a purge gas into the vacuum pump. The purge gas includes a first gas that is identical to the carrier gas.

Abstract: A trap device including an exhaust gas introduction pipe configured to allow an exhaust gas to flow and be led out from an outlet; a fin member provided in a position where the fin member faces the outlet and is hit by the exhaust gas led out from the outlet; an exhaust path forming member covering at least a portion of the exhaust gas introduction pipe and including an exhaust path configured to exhaust the exhaust gas such that the exhaust gas is turned back, via the fin member, in an opposite direction to a direction of flow of the exhaust gas in the exhaust gas introduction pipe; and a cooling jacket configured to cool the fin member is provided. The fin member includes a fin extending in the opposite direction to the direction of the flow of the exhaust gas in the exhaust gas introduction pipe.

Abstract: In order to provide an absorbance analysis apparatus for DCR gas that can measure a concentration of a DCR gas by separating absorbance of the DCR gas alone even in a mixed gas consisting of the DCR gas and CO gas whose absorption spectrum overlaps each other, the absorbance analysis apparatus for DCR gas comprises a DCR filter 31 that is configured to transmit a light in a first wavenumber domain including an absorbance peak of the DCR gas, a CO filter 32 that is configured to transmit a light in a second wavenumber domain that is different from the first wavenumber domain, and a DCR gas volume calculator 4 that is configured to calculate volume of the DCR gas based on a first absorbance measured by the light transmitted through the DCR filter 31 and a second absorbance measured by the light transmitted through the CO filter 32.

Abstract: A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.

Abstract: A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru3(CO)12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru3(CO)12 and the CO gas from the raw material container through the source line; and controlling a pressure in the source line such that the pressure in the source line is a predetermined first pressure or more, and closing the first valve to stop supplying of Ru3(CO)12 and the CO gas to the chamber.

Abstract: A source gas supply method for supplying a source gas to a processing part through a line by a carrier gas is provided. The source gas is generated by vaporizing a film forming source by heating a source container in which the film forming source is stored and a filling gas is filled. The method comprises replacing the filling gas in the source container with a replacement gas that does not deteriorate the source gas, determining whether or not the replacement with the replacement gas has been performed by measuring a pressure in the line using a pressure gauge, and heating the source container and supplying the source gas when it is determined that the replacement with the replacement gas has been performed.

Abstract: A film forming apparatus embeds ruthenium in a substrate having a recess. The film forming apparatus includes: a processing container; a gas supplier configured to supply gas; and a gas exhauster configured to exhaust gas, wherein the gas supplier includes a first supply line configured to supply a ruthenium raw-material gas into the processing container and a second supply line configured to supply a gas containing ozone gas into the processing container, and wherein the gas exhauster includes a first exhaust line including a first exhaust apparatus and configured to exhaust a gas containing a ruthenium raw-material gas from an interior of the processing container by using the first exhaust apparatus, and a second exhaust line including a second exhaust apparatus different from the first exhaust apparatus and configured to exhaust the gas containing ozone gas by using the second exhaust apparatus.

Abstract: There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

Abstract: In order to provide an absorbance analysis apparatus for DCR gas that can measure a concentration of a DCR gas by separating absorbance of the DCR gas alone even in a mixed gas consisting of the DCR gas and CO gas whose absorption spectrum overlaps each other, the absorbance analysis apparatus for DCR gas comprises a DCR filter 31 that is configured to transmit a light in a first wavenumber domain including an absorbance peak of the DCR gas, a CO filter 32 that is configured to transmit a light in a second wavenumber domain that is different from the first wavenumber domain, and a DCR gas volume calculator 4 that is configured to calculate volume of the DCR gas based on a first absorbance measured by the light transmitted through the DCR filter 31 and a second absorbance measured by the light transmitted through the CO filter 32.

Abstract: A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.

Abstract: A valve device includes: valves configured to control a flow of processing gases supplied to a process vessel; a housing in which first flow paths through which the processing gases flow are formed; a heat diffuser configured to cover the housing and diffuse heat of the housing; a heating part configured to cover the housing covered with the heat diffuser and heat the housing via the heat diffuser; a supply configured to supply a coolant to a second flow path formed between the housing and the heat diffuser; and a controller configure to control the heating part to heat the housing to a first temperature when a predetermined process is performed on a target substrate, and before a start of a cleaning process of the process vessel, control the heating part to stop heating of the housing and control the supply to supply the coolant to the second flow path.

Abstract: A film forming apparatus for forming a film on a substrate includes a chamber, a substrate support, a gas supply unit, a gas injection member, and a filter. The substrate support is disposed in the chamber to support a substrate placed thereon and maintain the substrate at a film forming temperature. The gas supply unit is configured to supply a gas containing a film forming source gas. The gas injection member is disposed to face the substrate support and has a gas injection area for injecting the gas containing the film forming source gas supplied from the gas supply unit. Further, the filter is disposed to cover at least the gas injection area on a surface of the gas injection member opposite to a surface facing the substrate support, the filter being configured to trap particles in the gas containing the film forming source gas while the gas passes therethrough.

Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Abstract: A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.

Abstract: A valve device includes: valves configured to control a flow of processing gases supplied to a process vessel; a housing in which first flow paths through which the processing gases flow are formed; a heat diffuser configured to cover the housing and diffuse heat of the housing; a heating part configured to cover the housing covered with the heat diffuser and heat the housing via the heat diffuser; a supply configured to supply a coolant to a second flow path formed between the housing and the heat diffuser; and a controller configure to control the heating part to heat the housing to a first temperature when a predetermined process is performed on a target substrate, and before a start of a cleaning process of the process vessel, control the heating part to stop heating of the housing and control the supply to supply the coolant to the second flow path.

Abstract: A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.

Abstract: There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Abstract: A gas supply apparatus is capable of intermittently supplying a source gas into a processing container via a buffer tank and a first high speed opening/closing valve. The gas supply apparatus includes: an evacuation line connected to a second side of the buffer tank and configured to evacuate the inside of the buffer tank; and a second high speed opening/closing valve provided on the evacuation line.