Abstract: The semiconductor device comprises a capacitor electrode defining openings which are made in each insulating layer, are communicated with one another and have different diameters at least at their coupling portions, the capacitor electrode is formed to extend along the surfaces of the openings.

Abstract: An improved etching method allowing the formation of a silicon nitride film with an adequate film thickness at the sidewall portion of a pattern is disclosed. A silicon nitride film formed to cover a stepped pattern is dry-etched, employing plasma of mixed gases containing CH2F2 and O2. As a result, a sidewall spacer of the silicon nitride film is formed at the sidewall of the pattern in a self-aligned manner.

Abstract: A hard mask insulating layer is formed on a gate electrode which is formed on a main surface of a silicon substrate with a gate insulating layer interposed. An SiN sidewall spacer is directly formed on a thin SiO2 layer which is formed to cover a side surface of the gate electrode. A contact hole is formed to penetrate an interlayer insulating layer formed on an SiN stopper layer and reach the main surface of the silicon substrate.

Abstract: The semiconductor device comprises a capacitor electrode defining openings which are made in each insulating layer, are communicated with one another and have different diameters at least at their coupling portions, the capacitor electrode is formed to extend along the surfaces of the openings.

Abstract: Gas-permeable hard contact lenses are produced by hot press-stretching a crosslined gas-permeable hard contact lens material and then machining the press-stretched material. The gas-permeable hard contact lenses are formed from a crosslinked gas permeable hard contact lens material which is hot press-stretched to have a compression ration of 5 to 50% and a compression-flexure fracture strength of 300 to 1,500 g. Efficiently produced gas-permeable hard contact lenses are produced which are free of optical strains, excellent in transparency, small internal stress and comfortable to wear with improved durability strength.

Abstract: A hard mask insulating layer is formed on a gate electrode which is formed on a main surface of a silicon substrate with a gate insulating layer interposed. An SiN sidewall spacer is directly formed on a thin SiO2 layer which is formed to cover a side surface of the gate electrode. A contact hole is formed to penetrate an interlayer insulating layer formed on an SiN stopper layer and reach the main surface of the silicon substrate.

Abstract: A hard mask insulating layer is formed on a gate electrode which is formed on a main surface of a silicon substrate with a gate insulating layer interposed. An SiN sidewall spacer is directly formed on a thin SiO2 layer which is formed to cover a side surface of the gate electrode. A contact hole is formed to penetrate an interlayer insulating layer formed on an SiN stopper layer and reach the main surface of the silicon substrate.

Abstract: There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode.

Abstract: An improved etching method allowing the formation of a silicon nitride film with an adequate film thickness at the sidewall portion of a pattern is disclosed. A silicon nitride film formed to cover a stepped pattern is dry-etched, employing plasma of mixed gases containing CH.sub.2 F.sub.2 and O.sub.2. As a result, a sidewall spacer of the silicon nitride film is formed at the sidewall of the pattern in a self-aligned manner.

Abstract: A method for producing 2-hydroxyethyl methacrylate polymers comprising polymerizing 2-hydroxyethyl methacrylate or a monomer mixture thereof containing a halogen compound thorough radical polymerization; method for producing hydrogels comprising subjecting the polymers to a water-imparting treatment; method for producing water-containing soft contact lenses comprising molding the polymers into a shape of contact lens and subjecting them to a water-imparting treatment and method for producing polymers comprising treating at least molding surfaces of molds, which form a cavity of contact lens shape, with a halogen compound and polymerizing 2-hydroxyethyl methacrylate or a monomer mixture thereof in the cavity through radical polymerization are disclosed. According to the present invention, water-containing soft contact lenses with high heat resistance and intermediates therefor are obtained from 2-hydroxyethyl methacrylate of high purity.

Abstract: When a compressed air is led into a reference pressure chamber along with a boundary between a resin housing and a terminal, such compressed air may cause a wire breaking. A barrier wall for blocking the compressed air from penetrating toward the wire is disposed. The reference pressure chamber is divided into a main chamber and a subchamber by the barrier wall. Since the barrier wall blocks the compressed air, the compressed air can not reach a silicon gel in the main chamber. Therefore, the wire breaking caused by the compressed air when connecting a connector therewith can be precluded.

Abstract: An image forming apparatus includes a developing device for developing an electrostatic latent image formed in a prescribed region on an image carrier corresponding to an original document with a charged developer to form a developer image on the image carrier, a transfer charger for transferring the developer image onto an image receiving medium from the image carrier, and a pre-transfer charger for applying an electric charge having the same polarity as that of the charged developer to the image carrier before transferring the developer image onto the image receiving medium. The apparatus further includes a controller for controlling the pre-transfer charger so that the electric charge is applied only to a given area extending from a front end of the prescribed region on the image carrier on which the developer image is formed, the given area smaller than the prescribed region.

Abstract: There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode.

Abstract: A semiconductor device is provided for convenient checking of etching states of semiconductor layers, along with a process for its preparation, wherein a test layer is formed on the same wafer where a semiconductor product is manufactured, and concurrently with and under the same formation conditions as formation a target layer forming a part of the semiconductor product, wherein the test layer is formed on a first layer and on a second layer interposed between a portion of the test layer and the first layer, with one of the first and second layers having the same etching properties as the target layer and the other of the first and second layers having different etching characteristics from the target layer.

Abstract: An improved semiconductor memory device in which an electric circuit operates normally is provided. A block of memory cells of a dynamic random access memory is provided on a semiconductor substrate. A dummy storage node is provided near a corner portion of the memory cell block. A dummy cell plate is provided such that it covers the dummy storage node and is electrically insulated from a main cell plate of the DRAM.

Abstract: A pressure sensor has a resin housing containing a pressure sensor positioned between a reference pressure chamber and a pressure to be measured. A terminal extends through the housing toward the sensor. A wire connects the terminal to the sensor. When a connector is connected to the terminal, it may compress air around the terminal. The compressed air may travel along the terminal and break the wire connected to the sensor. To prevent such breakage, a barrier wall is provided to block the compressed air from penetrating toward the wire. The reference pressure chamber is divided into a main chamber and a subchamber by the barrier wall. Since the barrier wall blocks the compressed air, the compressed air can not reach a silicon gel on the sensor and the wire in the main chamber. Therefore, the wire is protected.

Abstract: The nonaqueous electrolyte battery of this invention is provided with a spiral electrode unit comprising a separator laminated between a cathode and an anode rolled into a spiral shape having anode around the outer perimeter. An anode terminal tab disconnects from the outermost one circumference of anode residue after discharge to prevent residual anode deposition on the cathode when power is overdrawn.

Abstract: The oxygen-permeable hard contact lens of this invention produced by polymerizing in a composition composed of 30 to 50% by weight of an alkyl (meth)acrylate, 10 to 40% by weight of a fluorine-containing monomer, 10 to 35% by weight of a silicone (meth)acrylate, 5 to 15% by weight of an unsaturated carboxylic acid and 0.1 to 15% by weight of a di- or tri(meth)acrylate of a dihydric or higher hydric alcohol by raising a temperature continuously or stepwise from 40.degree. to 100.degree. C. and processing the resulting polymer into a lens shape by ordinary mechanical processing and polishing, is excellent in stain resistance, scratch resistance and hydrophilicity.