Patents by Inventor Yuichiro Yamashita
Yuichiro Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10951866Abstract: An image sensor device includes a plurality of color filter units arranged in an array, each of the color filter units comprising an array of n*m color filters, and n and m are integers equal to or greater than 3. The plurality of color filter units includes a plurality of first color filter units, a plurality of second color filter units, and a plurality of third color filter units. The color filters of the first color filter units are transmissive to light beams within a first wavelength range, the color filters of the second color filter units are transmissive to light beams within a second wavelength range, and the color filters of the third color filter units are transmissive to light beams within a third wavelength range.Type: GrantFiled: July 17, 2017Date of Patent: March 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventor: Yuichiro Yamashita
-
Publication number: 20200321372Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: MASAHIRO KOBAYASHI, Yuichiro Yamashita
-
Publication number: 20200303433Abstract: Image sensor structures are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure surrounding the light sensing region and having an opening region in a top view and a backside isolation structure formed at the backside of the substrate and encompassing the light-sensing region and vertically overlapping the opening region. The image sensor structure further includes a first gate structure formed over the front side of the substrate and overlapping the opening region and the front side isolation structure and a storage node in the substrate adjacent to the first gate structure. In addition, the storage node extends into the opening region.Type: ApplicationFiled: June 4, 2020Publication date: September 24, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yuichiro YAMASHITA, Chun-Hao CHUANG, Hirofumi SUMI
-
Publication number: 20200303431Abstract: An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalk form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalk and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.Type: ApplicationFiled: June 8, 2020Publication date: September 24, 2020Inventors: ALEXANDER KALNITSKY, JHY-JYI SZE, DUN-NIAN YAUNG, CHEN-JONG WANG, YIMIN HUANG, YUICHIRO YAMASHITA
-
Publication number: 20200279969Abstract: A single photon avalanche diode (SPAT) image sensor is disclosed. The SPAT) image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.Type: ApplicationFiled: May 21, 2020Publication date: September 3, 2020Inventors: TZU-JUI WANG, JHY-JYI SZE, YUICHIRO YAMASHITA, KUO-CHIN HUANG
-
Patent number: 10727266Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.Type: GrantFiled: November 26, 2019Date of Patent: July 28, 2020Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yuichiro Yamashita
-
Publication number: 20200227582Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor includes: a substrate having a front surface and a back surface; wherein the substrate includes a sensing region, and the sensing region includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the back surface of the substrate; a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; and a first layer doped with dopants of the first conductivity type between the common node and the sensing node.Type: ApplicationFiled: March 27, 2020Publication date: July 16, 2020Inventor: YUICHIRO YAMASHITA
-
Patent number: 10700117Abstract: Methods for forming an image sensor structure are provided. The method includes forming a light-sensing region in a substrate and forming a storage node adjacent to light-sensing region in the substrate. The method further includes forming a front side isolation structure partially surrounding an upper portion of the light-sensing region and forming a trench fully surrounding a bottom portion of the light-sensing region to expose a bottom surface of the front side isolations structure. The method further includes forming a backside isolation structure in the trench.Type: GrantFiled: November 27, 2018Date of Patent: June 30, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yuichiro Yamashita, Chun-Hao Chuang, Hirofumi Sumi
-
Patent number: 10692914Abstract: An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalls form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalls and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.Type: GrantFiled: January 7, 2019Date of Patent: June 23, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Alexander Kalnitsky, Jhy-Jyi Sze, Dun-Nian Yaung, Chen-Jong Wang, Yimin Huang, Yuichiro Yamashita
-
Patent number: 10672934Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.Type: GrantFiled: January 17, 2018Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tzu-Jui Wang, Jhy-Jyi Sze, Yuichiro Yamashita, Kuo-Chin Huang
-
Patent number: 10636828Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.Type: GrantFiled: March 18, 2019Date of Patent: April 28, 2020Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yuichiro Yamashita
-
Patent number: 10636930Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor includes: a substrate having a front surface and a back surface; wherein the substrate includes a sensing region, and the sensing region includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the back surface of the substrate; a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; and a first layer doped with dopants of the first conductivity type between the common node and the sensing node.Type: GrantFiled: February 14, 2018Date of Patent: April 28, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventor: Yuichiro Yamashita
-
Publication number: 20200098800Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.Type: ApplicationFiled: November 26, 2019Publication date: March 26, 2020Inventors: MASAHIRO KOBAYASHI, Yuichiro Yamashita
-
Publication number: 20200075645Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.Type: ApplicationFiled: November 11, 2019Publication date: March 5, 2020Inventors: Masaaki Minowa, Hidekazu Takahashi, Yuichiro Yamashita, Akira Okita
-
Publication number: 20200066770Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a semiconductor substrate. One or more isolation structures are arranged within one or more trenches disposed along a first surface of the semiconductor substrate. The one or more isolation structures are separated from opposing sides of the image sensing element by non-zero distances. The one or more trenches are defined by sidewalls and a horizontally extending surface of the semiconductor substrate. A doped region is laterally arranged between the sidewalls of the semiconductor substrate defining the one or more trenches and is vertically arranged between the image sensing element and the first surface of the semiconductor substrate.Type: ApplicationFiled: November 5, 2019Publication date: February 27, 2020Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
-
Patent number: 10510789Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.Type: GrantFiled: March 13, 2019Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
-
Patent number: 10504947Abstract: An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.Type: GrantFiled: August 4, 2017Date of Patent: December 10, 2019Assignee: Canon Kabushiki KaishaInventors: Masaaki Minowa, Hidekazu Takahashi, Yuichiro Yamashita, Akira Okita
-
Publication number: 20190355775Abstract: An image sensor is disclosed. The image sensor includes: a common node heavily doped with dopants of a first conductivity type, the common node being within the substrate and abutting the front surface of the substrate; and a sensing node heavily doped with dopants of a second conductivity type opposite to the first conductivity type, the sensing node being within the substrate and abutting the front surface of the substrate; an interconnect structure, wherein the front surface of the substrate faces the interconnect structure; a distributed Bragg reflector (DBR) between the front surface of the substrate and the interconnect structure; a first contact plug passing through the DBR and coupling the common node to the interconnect structure; and a second contact plug passing through the DBR and coupling the sensing node to the interconnect structure.Type: ApplicationFiled: August 1, 2019Publication date: November 21, 2019Inventor: YUICHIRO YAMASHITA
-
Patent number: 10418398Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.Type: GrantFiled: January 3, 2018Date of Patent: September 17, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
-
Patent number: 10373993Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.Type: GrantFiled: January 3, 2018Date of Patent: August 6, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki