Abstract: A semiconductor device is tested for its function by sandwiching the inventive anisotropic conductive film 1 between a semiconductor device 2 and a circuit board 3, and applying a contact load F of 3-50 gf per one electrode of the device to achieve functionally testable conduction between the device 2 and the board 3. The anisotropic conductive film 1 has a structure wherein plural conductive paths having a total length of 60-500 &mgr;m protrude from the both surfaces of the film substrate made of an insulating resin, and shows an elastic modulus of 0.1-1.0 GPa at 25-150° C. The deformation of the anisotropic conductive film during a test is 5-30 &mgr;m.

Abstract: The present invention provides a thermally conductive sheet that adheres finely to a semiconductor element and a heat dissipating plate, even with a low pressure at which a large-scaled semiconductor element cannot be broken, and that affords fine thermal conductivity, and a semiconductor device using this sheet. The thermally conductive sheet of the present invention has plural metal protrusions on at least one surface of a metal foil, wherein at least a part of gaps between the plural metal protrusions is filled with a resin, and the resin melts and/or fluidizes by heating and/or pressurizing to show an adhesion function. The semiconductor device of the present invention includes the above-mentioned thermally conductive sheet of the present invention and at least a semiconductor element and a heat dissipating plate adhered thereto.

Abstract: The present invention provides a production method of an anisotropic conductive film, which method includes the steps of (a) winding an insulated wire around a core member to form one roll of a winding layer, this insulated wire including a metal conductor wire and a coating layer made from an insulating resin, this coating layer being formed on the wire, placing an insulating resin film on the obtained winding layer, and repeating the winding and the placing to give a laminate alternately having the winding layer having a single row of insulated wires and an insulating resin layer made from the insulating resin film, (b) partially or entirely melting at least one of the coating layer and the insulating resin layer to integrate the winding layer and the insulating resin layer, and (c) slicing the laminate along a plane forming an angle with the insulated wire in a desired film thickness.

Abstract: A semiconductor device is tested for its function by sandwiching the inventive anisotropic conductive film 1 between a semiconductor device 2 and a circuit board 3, and applying a contact load F of 3-50 gf per one electrode of the device to achieve functionally testable conduction between the device 2 and the board 3. The anisotropic conductive film 1 has a structure wherein plural conductive paths having a total length of 60-500 &mgr;m protrude from the both surfaces of the film substrate made of an insulating resin, and shows an elastic modulus of 0.1-1.0 GPa at 25-150° C. The deformation of the anisotropic conductive film during a test is 5-30 &mgr;m.

Abstract: A process of producing a semiconductor device comprises the steps of:

Abstract: A semiconductor device comprising an anisotropic conductive film and a semiconductor element, wherein the film is bonded to the element on the side comprising an electrode, such that the electrode is electrically connectable to an external circuit via a conductive path in the film. According to the present invention, a conventional mounting apparatus can be used for mounting a chip via ACF. Consequently, the productivity of the mounting process for producing a mounted structure of semiconductor element/ACF/circuit board can be improved.

Abstract: A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.

Abstract: A polycarbodiimide represented by the formula (I): wherein R1 is an alkylene group having 2 to 10 carbon atoms, R2 is a divalent aromatic group, R3 is a monovalent aromatic group, k is 0 or an integer of 1 to 30, m is an integer of 2 to 100, and n is 0 or an integer of 1 to 30, a process for preparing the same and uses of the polycarbodiimide. The polycarbodiimide is favorably used in the form of films such as adhesive films for die bonding and adhesive films for underfilling, which can be used in semiconductor devices.

Abstract: As an anisotropic conductive film capable of firmly adhering to an electronic component and a circuit board and achieving good electrical continuity by thermal compression bonding at a low temperature at which the circuit board is not deteriorated, an anisotropic conductive film is provided, which has a plurality of conductive paths 2 insulated from each other and penetrating the film substrate 1A in the direction of the thickness of the film substrate, both ends 2a and 2b of each conductive path being exposed to the top and back faces of the film substrate, wherein the film substrate 1A is mainly composed of a polycarbodiimide copolymer having a structure represented by formula (I) below:

Abstract: An anisotropic conductive film 1 comprising an insulating film 2 and plural conductive paths (3, 4), wherein the plural conductive paths are insulated from each other and penetrate the insulating film 2 in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path 3 capable of contact with an electrode 12 of a semiconductor element 11 and a circuit 14 of a circuit board 13 has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Abstract: An anisotropic conductive film 1 comprising an insulating film 2 and plural conductive paths (3, 4), wherein the plural conductive paths are insulated from each other and penetrate the insulating film 2 in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path 3 capable of contact with an electrode 12 of a semiconductor element 11 and a circuit 14 of a circuit board 13 has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Abstract: A polycarbodiimide represented by the formula (I): 1

Abstract: The present invention provides a production method of an anisotropic conductive film, which method includes the steps of

Abstract: A semiconductor device containing a circuit board, an anisotropic conductive film and a semiconductor element electrically connected to the circuit board via the anisotropic conductive film, wherein the anisotropic conductive film contains a film substrate made from an insulating resin and plural conductive paths insulated from each other, which paths are disposed in and through the film substrate in the thickness direction, and wherein a gap is formed between the surface on the circuit board side of the film substrate and the board surface of the circuit board. The connection part between the anisotropic conductive film and the circuit board, as well as the connection part between the anisotropic conductive film and the semiconductor element do not suffer from interface destruction even when the device is used in an environment associated with radical temperature changes. Thus, a semiconductor device having high connection reliability can be obtained.

Abstract: The object of the present invention to provide an anisotropic conductive film capable of establishing electrical connection at a narrow pitch, maintaining strength in the film surface direction that has not been achieved so far, and improving the adhesion to an objective substance, as well as a preferable production method thereof. At least one coating layer made from an insulating material is formed on a metal thin wire, the wire is wound around a core member, the wire is heated and/or pressurized to weld and/or pressure-weld the coating layers to each other to give a winding block, and the winding block is cut in a predetermined film thickness. In this way, an anisotropic conductive film, wherein conductive paths 2 (=metal thin wires) are insulated from each other and pierce a film substrate 1 in the thickness direction, can be obtained. When the coating layer consists of two layers, the outer layer thereof corresponds to the film substrate 1 and the inner layer corresponds to a coating layer 3.

Abstract: The present invention is characterized, in a semiconductor device with a semiconductor element sealed by resin, in that a metallic foil is bonded through adhesive to the bottom of a lead frame with the semiconductor element mounted thereon, and another metallic foil is fixed to the outer surface of the sealing resin on the side of the semiconductor element. Such a configuration provides a semiconductor device free from warp. In addition, the effect of no warp and metallic foils on the upper and lower surfaces of the semiconductor device provides a reliable semiconductor device with excellent heat dissipation, less influence from moisture absorption and high thermal stress resistance.

Abstract: A sealing label for sealing semiconductor element comprises a metal foil substrate or a heat-resisting organic film substrate having formed thereon a sealing material component layer for sealing a semiconductor element, wherein the sealing material component layer is convexly formed such that the layer has a thick flat portion at the central portion of the substrate as compared with the peripheral portion of the substrate. The use of the sealing label in molding a semiconductor device can provide a semiconductor device having a high quality without substantially having voids in the sealing resin.

Abstract: A thermosetting resin composition for a fixing treatment of electronic parts, which is able to adhere in short time at low temperature, has a heat resistance, is lowly hygroscopic, and hardly produces package cracks, etc.The thermosetting resin composition comprises polycarbodiimide which is soluble in organic solvents and silicone-modified polyimide which is soluble in organic solvents, which are compounded.

Abstract: A semiconductor device with a metal foil and a sealing resin material. Metal foil is formed integrally with the sealing resin layer.

Abstract: A process for producing a metal foil-covered semiconductor device. The metal foil material is one which is, in molding a resin for encapsulating a semiconductor element using a mold, temporarily fixed on a surface of a cavity of the mold, and is adhered on a surface of a semiconductor device by injecting the encapsulating resin into the mold and molding the resin, wherein a contact angle of the face of the metal foil material which is in contact with the encapsulating resin during molding, to water is 110.degree. or less.