Patents by Inventor Yuji NISHINO

Yuji NISHINO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11367611
    Abstract: There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: June 21, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuji Nishino, Jun Sato
  • Patent number: 11264266
    Abstract: A substrate processing method is implemented in a substrate processing apparatus including a processing chamber, a turntable on which a substrate is placed inside the processing chamber, and first and second gas supplies that supply first and second gases, respectively. The substrate processing method deposits a film, generated by a reaction between the first gas and the second gas, on the substrate in a first state where the substrate rotates and the turntable undergoes a clockwise orbital rotation around a rotating shaft so that the substrate passes through a region supplied with the first gas and thereafter passes through a region supplied with the second gas, and deposits the film on the substrate in a second state where the substrate rotates and the turntable undergoes a counterclockwise orbital rotation.
    Type: Grant
    Filed: January 7, 2020
    Date of Patent: March 1, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Yuji Nishino
  • Publication number: 20200234997
    Abstract: A substrate processing method is implemented in a substrate processing apparatus including a processing chamber, a turntable on which a substrate is placed inside the processing chamber, and first and second gas supplies that supply first and second gases, respectively. The substrate processing method deposits a film, generated by a reaction between the first gas and the second gas, on the substrate in a first state where the substrate rotates and the turntable undergoes a clockwise orbital rotation around a rotating shaft so that the substrate passes through a region supplied with the first gas and thereafter passes through a region supplied with the second gas, and deposits the film on the substrate in a second state where the substrate rotates and the turntable undergoes a counterclockwise orbital rotation.
    Type: Application
    Filed: January 7, 2020
    Publication date: July 23, 2020
    Inventors: Hitoshi KATO, Yuji NISHINO
  • Publication number: 20190287787
    Abstract: There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 19, 2019
    Inventors: Yuji NISHINO, Jun SATO