Abstract: A defect observation device comprising: a defect determination coordinate creation unit by which the coordinates of a plurality of second defect candidates are determined as overlapping defect candidate coordinates, the plurality of second defect candidates respectively having, in a plurality of second imaging visual field regions overlapping a first imaging visual field region, a circuit pattern which partly overlaps a circuit pattern in the first imaging visual field region, in which a first defect candidate for defect determination among a plurality of defect candidates of a sample is present; a pseudo-reference image generation unit which generates a pseudo-reference image including a circuit pattern of the first defect candidate by superimposing a plurality of images respectively captured at the plurality of overlapping defect candidate coordinates; and a defect determination unit which compares an image for defect determination captured at the coordinates of the first defect candidate with the pseudo-re

Abstract: There is provided a system for managing sharing of a straddle type vehicle, including a position locating unit provided on the straddle type vehicle and configured to locate a position of the straddle type vehicle, a position acquisition unit configured to acquire a position of a peripheral vehicle from the peripheral vehicle present around the straddle type vehicle, and a determination unit configured to determine a parking position at which the straddle type vehicle is parked based on the position of the straddle type vehicle located by the position locating unit and the position of the peripheral vehicle acquired by the position acquisition unit when the straddle type vehicle is parked.

Abstract: An overlay measurement method using a reference image is an effective method for an overlay measurement in a product circuit. However, there is a problem that it is not possible to obtain an ideal reference image in a process of prototyping.

Abstract: The invention is to provide a defect detection device capable of using a compact optical system to detect a plurality of types of defects with high sensitivity and high speed. The defect detection device includes an irradiation system that irradiates light onto an object to be inspected; an optical system that forms scattered light produced by a light irradiation into an image; a microlens array disposed at an image plane of the optical system; an imaging element that is disposed at a position offset from the imaging plane of the optical system and that images light that passes through the microlens array; a mask image storage unit that stores a plurality of mask images generated for each type of defect or each defect direction; and a calculation unit that carries out mask processing on an image obtained from the imaging element using the plurality of mask images and carries out defect detection processing.

Abstract: A versatile template generation unit cuts a first region in which a similarity level to a template image is a first similarity level and a second region in which the similarity level to the template image is a second similarity level different from the first similarity level, from an input image including an alignment mark, to generate a versatile template image.

Abstract: In a device for observing a semiconductor wafer, a positional relationship between an in-wafer region and a background region in an imaging field of view is not constant when an outer peripheral portion of the wafer is imaged, which results in an increase in the quantity of calculation in defect detection and image classification processing and makes it difficult to efficiently perform defect observation and analysis. There is provided a defect observation system for a semiconductor wafer, and the system includes: a stage on which the semiconductor wafer is placed and which is movable in an XY direction, an imaging unit that is configured to image a portion including an edge of the semiconductor wafer, and an image output unit that is configured to, with respect to a plurality of images obtained by imaging, output images in which edges of the wafer are substantially in parallel among the plurality of images.

Abstract: Provided is a defect classification apparatus classifying images of defects of a sample included in images obtained by capturing the sample, the apparatus including an image storage unit for storing the images of the sample acquired by an external image acquisition unit, a defect class storage unit for storing types of defects included in the images of the sample, an image processing unit for extracting images of defects from the images from the sample, processing the extracted images of defects and generating a plurality of defect images, a classifier learning unit for learning a defect classifier using the images of defects of the sample extracted by the image processing unit and data of the plurality of generated defect images, and a defect classification unit for processing the images of the sample by using the classifier learned by the classifier learning unit, to classify the images of defects of the sample.

Abstract: A method for measuring overlay at a semiconductor device on which circuit patterns are formed by a plurality of exposure processes is characterized in including an image capturing step for capturing images of a plurality of areas of the semiconductor device, a reference image setting step for setting a reference image based on a plurality of the images captured in the image capturing step, a difference quantifying step for quantifying a difference between the reference image set in the reference image setting step and the plurality of images captured in the image capturing step, and an overlay calculating step for calculating the overlay based on the difference quantified in the difference quantifying step.

Abstract: A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled.

Abstract: An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.

Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

Abstract: In a device for observing a semiconductor wafer, a positional relationship between an in-wafer region and a background region in an imaging field of view is not constant when an outer peripheral portion of the wafer is imaged, which results in an increase in the quantity of calculation in defect detection and image classification processing and makes it difficult to efficiently perform defect observation and analysis. There is provided a defect observation system for a semiconductor wafer, and the system includes: a stage on which the semiconductor wafer is placed and which is movable in an XY direction, an imaging unit that is configured to image a portion including an edge of the semiconductor wafer, and an image output unit that is configured to, with respect to a plurality of images obtained by imaging, output images in which edges of the wafer are substantially in parallel among the plurality of images.

Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

Abstract: A defect observation device comprising: a defect determination coordinate creation unit by which the coordinates of a plurality of second defect candidates are determined as overlapping defect candidate coordinates, the plurality of second defect candidates respectively having, in a plurality of second imaging visual field regions overlapping a first imaging visual field region, a circuit pattern which partly overlaps a circuit pattern in the first imaging visual field region, in which a first defect candidate for defect determination among a plurality of defect candidates of a sample is present; a pseudo-reference image generation unit which generates a pseudo-reference image including a circuit pattern of the first defect candidate by superimposing a plurality of images respectively captured at the plurality of overlapping defect candidate coordinates; and a defect determination unit which compares an image for defect determination captured at the coordinates of the first defect candidate with the pseudo-re

Abstract: In an optical disc apparatus that records and reproduces data onto and from an optical disc in units of predetermined block, an information divider divides the data so as to reduce an amount of the data included in each of blocks when a recording state of the optical disc does not satisfy a predetermined criterion, and reproduces recording data in units of the block by adding sub-information including a value indicating the amount of the data included in each of the blocks. An error-correction encoder circuit encodes the recording data in a first error-correction code format, and a recorder converts encoded recording data into a recording signal, and records the recording signal onto the optical disc. A quality evaluator circuit produces an evaluation value indicating a recording quality based on a result of reproducing the recording signal recorded on the optical disc.

Abstract: An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.

Abstract: To review minute defects that were buried in roughness scattered light with an observation device provided with a dark-field microscope, a scanning electron microscope (SEM), and a control unit, the present invention configures the dark-field microscope by installing a filter for blocking a portion of the scattered light, an imaging lens for focusing the scattered light that has passed through the filter, and a detector for dividing the image of the scattered light focused by the imaging lens into the polarization directions converted by a wavelength plate and detecting the resulting images, and the control has a calculation unit for determining the position of a defect candidate detected by another inspection device using the plurality of images separated into polarization directions and detected by the detector.

Abstract: A versatile template generation unit cuts a first region in which a similarity level to a template image is a first similarity level and a second region in which the similarity level to the template image is a second similarity level different from the first similarity level, from an input image including an alignment mark, to generate a versatile template image.

Abstract: A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled.

Abstract: To quantify the degree of a defect, and provide information useful for yield management. Disclosed is a defect quantification method wherein: a defect image is classified; a measurement region and a measurement area are set to each of the defect image and a reference image on the basis of defect image classification results, said reference image corresponding to the defect image; and an evaluation value of a defect is calculated using each of the measurement values obtained from each of the measurement areas of the defect image and the reference image, and the defect is quantified.