Abstract: A radio-frequency module includes a mounting substrate having a first main surface and a second main surface on opposite sides of the mounting substrate; an external connection terminal arranged on the first main surface; and a first transmission power amplifier arranged on the first main surface. The first transmission power amplifier includes an amplifier first main surface closest to the first main surface, an amplifier second main surface that faces away from the amplifier first main surface, a first input-output electrode arranged on the amplifier first main surface and through which a radio-frequency signal input into the first transmission power amplifier or a radio-frequency signal output from the first transmission power amplifier is transmitted, and a first ground electrode arranged on the amplifier second main surface.

Abstract: A radio frequency module includes: a first mounting board having a first principal surface and a second principal surface; a second mounting board having a third principal surface facing the second principal surface and a fourth principal surface; a transmission filter having a first mounting surface facing the second principal surface and a first top surface; and a reception filter having a second mounting surface facing the third principal surface and a second top surface; wherein the transmission and reception filters overlap at least partially in a plan view of the first and second mounting boards, an output terminal of the transmission filter is arranged on the first top surface, an input terminal of the reception filter is arranged on the second top surface, and the output and input terminals are connected by a conductive member not routed through the first mounting board or the second mounting board.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

Abstract: A high-frequency module includes a mounting substrate having main surfaces 30a and 30b, a first circuit component mounted on the main surface 30a, a second circuit component mounted on the main surface 30b, an external connection terminal arranged on the main surface 30b side relative to the main surface 30a with respect to the mounting substrate, a long via conductor connected to the first circuit component, passing through the mounting substrate, and having a substantially long shape when the mounting substrate is viewed in a plan view, and a metal block arranged on the main surface 30b side relative to the main surface 30a with respect to the mounting substrate and connecting the long via conductor and the external connection terminal. When the mounting substrate is viewed in a plan view, the first circuit component overlaps the long via conductor and the metal block overlaps the long via conductor.

Abstract: A radio-frequency module includes: a transmitting circuit disposed on a mounting substrate to process a radio-frequency signal input from a transmission terminal and to output a resultant signal to a common terminal; a receiving circuit disposed on the mounting substrate to process a radio-frequency signal input from the common terminal and to output a resultant signal to a reception terminal; a first inductor included in a first transmitting circuit; and a bonding wire connected to the ground and bridging over the first inductor.

Abstract: Provided is a semiconductor device capable of self-repairing cracks or peels occurring in sealing materials. A semiconductor module includes a member including a semiconductor element, an insulating substrate bonded onto one surface of the semiconductor element, and a printed circuit board for coupling with an external circuit connected to the other surface of the semiconductor element, which are sealed with a sealing material. In the semiconductor module, the sealing material includes a first thermosetting resin and a microcapsule particle containing a second thermosetting resin precursor.

Abstract: A semiconductor device including: an insulating substrate; a semiconductor element mounted on the insulating substrate; an internal printed circuit board disposed on the semiconductor element; and a sealing member that seals the semiconductor element, the internal printed circuit board, and at least a portion of the insulating substrate. The sealing member is made of a sealant that includes a resin and a pigment, and that initially has a chromatic, white, or gray color, and the sealing member degrades, thereby causing color of a front surface thereof to change to a degree recognizable by a user after the semiconductor device has been in use under a prescribed condition for a prescribed duration.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

Abstract: A semiconductor device including: an insulating substrate; a semiconductor element mounted on the insulating substrate; an internal printed circuit board disposed on the semiconductor element; and a sealing member that seals the semiconductor element, the internal printed circuit board, and at least a portion of the insulating substrate. The sealing member is made of a sealant that includes a resin and a pigment, and that initially has a chromatic, white, or gray color, and the sealing member degrades, thereby causing color of a front surface thereof to change to a degree recognizable by a user after the semiconductor device has been in use under a prescribed condition for a prescribed duration.

Abstract: A transmit-and-receive module includes a wiring substrate, a low-noise amplifier, a power amplifier, an insulating resin, and a conductive shield. The wiring substrate has a first surface and a second surface which is a back side of the first surface. The low-noise amplifier includes a first signal terminal and a first ground terminal. The first signal terminal is surface-mounted on the first surface. The power amplifier includes a second signal terminal and a second ground terminal. The second signal terminal and the second ground terminal are surface-mounted on the first surface. The insulating resin covers the low-noise amplifier and the power amplifier. The conductive shield covers a surface of the insulating resin. The first ground terminal is connected to the conductive shield.

Abstract: A communication module includes a power amplifier that amplifies a transmission signal having a first communication system or a second communication system and outputs an amplified signal to a signal path, a switch circuit that switches between a signal path for the first communication system and a signal path for the second communication system and outputs the amplified signal to one of the signal paths for the first communication system and the second communication system in accordance with a control signal supplied in accordance with the communication system of the transmission signal, and an impedance-matching network disposed between the power amplifier and the switch circuit, the impedance-matching network including a first variable capacitance element. The first variable capacitance element has a capacitance value that is controlled in accordance with the communication system of the transmission signal.

Abstract: A communication module includes a power amplifier that amplifies a transmission signal having a first communication system or a second communication system and outputs an amplified signal to a signal path, a switch circuit that switches between a signal path for the first communication system and a signal path for the second communication system and outputs the amplified signal to one of the signal paths for the first communication system and the second communication system in accordance with a control signal supplied in accordance with the communication system of the transmission signal, and an impedance-matching network disposed between the power amplifier and the switch circuit, the impedance-matching network including a first variable capacitance element. The first variable capacitance element has a capacitance value that is controlled in accordance with the communication system of the transmission signal.

Abstract: A transmit-and-receive module includes a wiring substrate, a low-noise amplifier, a power amplifier, an insulating resin, and a conductive shield. The wiring substrate has a first surface and a second surface which is a back side of the first surface. The low-noise amplifier includes a first signal terminal and a first ground terminal. The first signal terminal is surface-mounted on the first surface. The power amplifier includes a second signal terminal and a second ground terminal. The second signal terminal and the second ground terminal are surface-mounted on the first surface. The insulating resin covers the low-noise amplifier and the power amplifier. The conductive shield covers a surface of the insulating resin. The first ground terminal is connected to the conductive shield.

Abstract: Provided is a semiconductor device capable of self-repairing cracks or peels occurring in sealing materials. A semiconductor module includes a member including a semiconductor element, an insulating substrate bonded onto one surface of the semiconductor element, and a printed circuit board for coupling with an external circuit connected to the other surface of the semiconductor element, which are sealed with a sealing material. In the semiconductor module, the sealing material includes a first thermosetting resin and a microcapsule particle containing a second thermosetting resin precursor.

Abstract: A semiconductor device includes a molded body obtained by sealing, with a sealing material, a member including a semiconductor element, an insulating substrate which is bonded to one surface of the semiconductor element, and a printed circuit board which is used for a connection to an external circuit and is bonded to another surface of the semiconductor element. The sealing material includes a first sealing material which is a nanocomposite resin including an epoxy base resin, a curing agent, and an inorganic filler with an average particle size of 1 nm to 100 nm; and a second sealing material which is a thermosetting resin, a thermoplastic resin, or a mixture thereof without an inorganic filler. The sealing material is less likely to be degraded by thermal oxidation, even when the semiconductor element operates at a high temperature of 175° C. or higher, is crack resistant, and has high reliability and durability.

Abstract: To provide a multiband-support radio-frequency module in which the occurrence of a harmonic signal in an amplifier circuit is suppressed and the output of a radio-frequency signal containing unwanted harmonic components is prevented. A first signal path SL1 and a second signal path SL2 are provided such that they intersect each other at least once in a multilayer substrate 2, as viewed from above. With this configuration, high-output radio-frequency signals output from a first amplifier circuit 31 and a second amplifier circuit 32 can be prevented from interfering with other elements disposed in the multilayer substrate 2. It is thus possible to provide a multiband-support radio-frequency module 1 exhibiting excellent RF characteristics by suppressing the occurrence of harmonic signals in each of the first and second amplifier circuits 31 and 32 and by preventing the output of radio-frequency signals containing unwanted harmonic components.