Abstract: A method of producing a dental composition in which a first component has a second component dispersed therein is provided. The first component is a paste including a first polymerizable monomer that is a liquid, the second component includes a solvent in which the first polymerizable monomer is insoluble, and the method includes a step of mixing the first component and the second component.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel, a memory film in contact with the vertical semiconductor channel, and a vertical stack of tubular dielectric spacers laterally surrounding the memory film. The tubular dielectric spacers may include tubular graded silicon oxynitride portions having a composition gradient such that an atomic concentration of nitrogen decreases with a lateral distance from an outer sidewall of the memory film, or may include tubular composite dielectric spacers including a respective tubular silicon oxide spacer and a respective tubular dielectric metal oxide spacer. Each of the electrically conductive layers has a hammerhead-shaped vertical cross-sectional profile.

Abstract: There is provided a method of producing a polymerizable composition that includes a first polymerizable monomer; and a second polymerizable monomer, a polymer of the second polymerizable monomer, or both, the second polymerizable monomer, the polymer of the second polymerizable monomer, or the both being dispersed in the first polymerizable monomer, the method of producing a polymerizable composition includes dissolving the first polymerizable monomer; the second polymerizable monomer, the polymer of the second polymerizable monomer, or the both in a solvent to obtain a solution in a first step; and evaporating the solvent from the solution in a second step, wherein the first polymerizable monomer is a liquid, and wherein the second polymerizable monomer is a solid.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, and memory stack structures extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel, a tunneling dielectric layer, a vertical stack of discrete silicon nitride memory elements located at levels of the electrically conductive layers, and a vertical stack of discrete silicon oxide blocking dielectric structures laterally surrounding the vertical stack of discrete silicon nitride memory elements. Each of the silicon oxide blocking dielectric structures includes a silicon oxynitride surface region, and an atomic concentration of nitrogen atoms within the silicon oxynitride surface region decreases with a lateral distance from an interface between the silicon oxynitride surface region and a respective one of the silicon nitride memory elements.

Abstract: A method of manufacturing a polymerizable composition is capable of imparting antibacterial properties and the like to a cured product of polymerizable composition without deteriorating an appearance of the cured product of the polymerizable composition. The method of manufacturing a polymerizable monomer wherein a solution, that a second polymerizable monomer is dissolved in a first solvent, is dispersed in a first polymerizable monomer, includes mixing the first polymerizable monomer, the second polymerizable monomer, and the first solvent. The first polymerizable monomer is a liquid, and the second polymerizable monomer is a solid.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel, a memory film in contact with the vertical semiconductor channel, and a vertical stack of tubular dielectric spacers laterally surrounding the memory film. The tubular dielectric spacers may include tubular graded silicon oxynitride portions having a composition gradient such that an atomic concentration of nitrogen decreases with a lateral distance from an outer sidewall of the memory film, or may include tubular composite dielectric spacers including a respective tubular silicon oxide spacer and a respective tubular dielectric metal oxide spacer. Each of the electrically conductive layers has a hammerhead-shaped vertical cross-sectional profile.

Abstract: A method of manufacturing a polymerizable composition is capable of imparting antibacterial properties and the like to a cured product of polymerizable composition without deteriorating an appearance of the cured product of the polymerizable composition. The method of manufacturing a polymerizable monomer wherein a solution, that a second polymerizable monomer is dissolved in a first solvent, is dispersed in a first polymerizable monomer, includes mixing the first polymerizable monomer, the second polymerizable monomer, and the first solvent. The first polymerizable monomer is a liquid, and the second polymerizable monomer is a solid.

Abstract: An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a charge storage material layer, a tunneling dielectric layer, and a vertical semiconductor channel Laterally-extending cavities are formed by removing the disposable material layers selective to the silicon nitride layers and the memory opening fill structures. Insulating layers comprising silicon oxide are formed by oxidizing surface portions of the silicon nitride layers and portions of the charge storage material layers that are proximal to the laterally-extending cavities. Remaining portions of the charge storage material layers form vertical stacks of discrete charge storage elements. Remaining portions of the silicon nitride layers are replaced with electrically conductive layers.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, and memory stack structures extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel, a tunneling dielectric layer, a vertical stack of discrete silicon nitride memory elements located at levels of the electrically conductive layers, and a vertical stack of discrete silicon oxide blocking dielectric structures laterally surrounding the vertical stack of discrete silicon nitride memory elements. Each of the silicon oxide blocking dielectric structures includes a silicon oxynitride surface region, and an atomic concentration of nitrogen atoms within the silicon oxynitride surface region decreases with a lateral distance from an interface between the silicon oxynitride surface region and a respective one of the silicon nitride memory elements.

Abstract: An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a charge storage material layer, a tunneling dielectric layer, and a vertical semiconductor channel Laterally-extending cavities are formed by removing the disposable material layers selective to the silicon nitride layers and the memory opening fill structures. Insulating layers comprising silicon oxide are formed by oxidizing surface portions of the silicon nitride layers and portions of the charge storage material layers that are proximal to the laterally-extending cavities. Remaining portions of the charge storage material layers form vertical stacks of discrete charge storage elements. Remaining portions of the silicon nitride layers are replaced with electrically conductive layers.

Abstract: A method for manufacturing a carbon fiber is provided which involves: (1) immersing a carbon fiber composite material (CFC) in an acidic aqueous solution to elute at least a part of a resin component of the CFC, to thereby obtain a substantially fibrous product; and (2) immersing the substantially fibrous product obtained in step (1) in an alkaline aqueous solution to elute at least a part of a resin component of the substantially fibrous product, to thereby obtain a fibrous product. A method for manufacturing a carbon fiber reinforced resin composition is provided which involves manufacturing a carbon fiber by the above method and manufacturing a carbon fiber reinforced resin composition using the resulting carbon fiber. Using these methods, it is possible to recover and recycle a carbon fiber from a carbon fiber composite material (CFC) at a low cost without deteriorating the carbon fiber.

Abstract: There is provided a method of producing a polymerizable composition that includes a first polymerizable monomer; and a second polymerizable monomer, a polymer of the second polymerizable monomer, or both, the second polymerizable monomer, the polymer of the second polymerizable monomer, or the both being dispersed in the first polymerizable monomer, the method of producing a polymerizable composition includes dissolving the first polymerizable monomer; the second polymerizable monomer, the polymer of the second polymerizable monomer, or the both in a solvent to obtain a solution in a first step; and evaporating the solvent from the solution in a second step, wherein the first polymerizable monomer is a liquid, and wherein the second polymerizable monomer is a solid.

Abstract: A method of manufacturing a polymerizable composition is capable of imparting antibacterial properties and the like to a cured product of polymerizable composition without deteriorating an appearance of the cured product of the polymerizable composition. The method of manufacturing a polymerizable monomer wherein a solution, that a second polymerizable monomer is dissolved in a first solvent, is dispersed in a first polymerizable monomer, includes mixing the first polymerizable monomer, the second polymerizable monomer, and the first solvent. The first polymerizable monomer is a liquid, and the second polymerizable monomer is a solid.

Abstract: An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a charge storage material layer, a tunneling dielectric layer, and a vertical semiconductor channel Laterally-extending cavities are formed by removing the disposable material layers selective to the silicon nitride layers and the memory opening fill structures. Insulating layers comprising silicon oxide are formed by oxidizing surface portions of the silicon nitride layers and portions of the charge storage material layers that are proximal to the laterally-extending cavities. Remaining portions of the charge storage material layers form vertical stacks of discrete charge storage elements. Remaining portions of the silicon nitride layers are replaced with electrically conductive layers.

Abstract: According to the tire of the present invention having a tread composed of a rubber composition comprising, based on 100 parts by mass of a rubber component, 1 to 20 parts by mass of an ethylene-propylene-styrene copolymer, wherein the composition ratio thereof is 10 to 60% by mass of ethylene, 10 to 60% by mass of propylene, and 5 to 40% by mass of styrene; and 3 to 100 parts by mass of carbon black, a tire having a tread composed of a rubber composition excellent in chipping resistance can be provided.

Abstract: An alternating stack of insulating layers and spacer material layers is formed located over a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings are formed through the alternating stack. A memory stack structure is formed within each memory opening. Each memory stack structure includes a memory film and a vertical semiconductor channel. A silicon nitride layer is formed over a sidewall of each memory opening as a component of the memory film. A silicon carbon nitride interfacial layer is formed on the silicon nitride layer, and a tunneling dielectric layer is formed on the silicon carbon nitride interfacial layer.

Abstract: The present invention provides a studless winter tire having excellent performance on ice. The present invention relates to a studless winter tire including a tread formed from a rubber vulcanizate, the rubber vulcanizate containing a rubber component, and a short fiber with a degree of fibrillation of 50 to 95%.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings are formed through the alternating stack. Annular recesses are formed by laterally recessing the sacrificial material layers around each memory opening. A tubular aluminum oxide spacer is formed at a periphery of each annular recess. A tubular silicon oxycarbide spacer is selectively deposited on each of the tubular aluminum oxide spacers. The tubular silicon oxycarbide spacers are converted into tubular silicon oxide spacers by an oxidation process. Tubular charge storage spacers are formed on inner sidewalls of the tubular silicon oxide spacers. A vertical semiconductor channel is formed over a respective vertical stack of tubular charge storage spacer within each memory opening. The sacrificial material layers are removed to form backside recesses. Electrically conductive material are deposited in the backside recesses to form electrically conductive layers.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. A memory opening is formed through the alternating stack. A memory film including a silicon nitride layer and a tunneling dielectric layer is formed in the memory opening, and an opening is formed through the memory film. A chemical oxide layer is formed on a physically exposed surface of an underlying semiconductor material portion. A silicon nitride ring can be formed by selectively growing a silicon nitride material from an annular silicon nitride layer portion of the silicon nitride layer while suppressing deposition of the silicon nitride material on the tunneling dielectric layer and on the chemical oxide layer. A vertical semiconductor channel can be formed by depositing a continuous semiconductor material layer on the underlying semiconductor material portion and the tunneling dielectric layer and on the silicon nitride ring.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings are formed through the alternating stack. Annular recesses are formed by laterally recessing the sacrificial material layers around each memory opening. A tubular aluminum oxide spacer is formed at a periphery of each annular recess. A tubular silicon oxycarbide spacer is selectively deposited on each of the tubular aluminum oxide spacers. The tubular silicon oxycarbide spacers are converted into tubular silicon oxide spacers by an oxidation process. Tubular charge storage spacers are formed on inner sidewalls of the tubular silicon oxide spacers. A vertical semiconductor channel is formed over a respective vertical stack of tubular charge storage spacer within each memory opening. The sacrificial material layers are removed to form backside recesses. Electrically conductive material are deposited in the backside recesses to form electrically conductive layers.