Abstract: The present invention provides a socket adapter 10 for an impact wrench to prevent a manipulator ring 60 from being intentionally slid, the socket adapter comprising: a main body 11 including a cylinder section 20 having an engagement hole 21 to be installed in an insertion square 90 of the impact wrench, a shank section 40 configured to attach or detach a socket 80, and a drum section 30 positioned between the cylinder section and the shank section; a ball locking mechanism 50 adapted to switch the socket between a locked state where the socket cannot be detached and an unlocked state where the socket can be attached and detached by protrusion and retraction of a ball 51 housed in the shank section; a manipulator ring 60 slidably fitted on the drum section in the axial direction and configured to control the protrusion and retraction of the ball; and a starting resistance imparting means 70 for increasing the starting resistance of the manipulator ring when the manipulator ring begins to slide from a locking

Abstract: An immunoregulatory agent containing a regulatory agent that regulates Dedicator of cytokinesis 2 (DOCK2)-mediated Rac activation as an active ingredient is provided.

Abstract: It is made possible to monitor the periphery of a target object more accurately, using an imaging device that generates distance image data by sub-range analysis. For a target object present across first and second distance zones adjacent to each other, a first position at a near end position of the first distance zone, a second position at a boundary position between the first and second distance zones, and a third position indicating the position at a far end position of the second distance zone are obtained. Location data of the target object is generated based on location information of the second position with respect to a straight line connecting the first position and third position.

Abstract: Provided is a pharmaceutical composition effective for anti-cancer immunostimulating therapies.

Abstract: The present invention aims to provide a method of producing a fine particulate inorganic oxide dispersion, which makes it possible to easily disperse a fine particulate inorganic oxide while reducing the amount of dispersant used. The present invention relates to a method of producing a fine particulate inorganic oxide dispersion, the method including mixing the following components (A) to (D): (A) at least one fine particulate inorganic oxide selected from the group consisting of zirconium oxide (ZrO2), titanium oxide (TiO2), and barium titanate (BaTiO3), (B) a dispersant, (C) an alkoxysilane compound, and (D) a solvent having the following Hansen solubility parameters: a hydrogen bonding component (dH) of 11 or less and a polar component (dP) of 4 or more; and wet grinding the resulting mixture.

Abstract: Provided is a resin composition for imprinting excellent in imprint properties and optical properties such as high refractive index and low haze. The invention relates to a resin composition for imprinting containing: (A) a polysiloxane resin represented by the following formula (1): (R1SiO3/2)a(R22SiO2/2)b(R33SiO1/2)c(SiO4/2)d wherein R1, R2, and R3 are each independently a hydrogen atom, a hydroxy group, an alkoxy group, a C1-C12 hydrocarbon group, or a C1-C12 substituent having one or more crosslinkable functional groups, with at least one of R1, R2, or R3 being a C1-C12 substituent having one or more crosslinkable functional groups, and when a plurality of R1s, R2s, or R3s are present, they may be different from one another; and a, b, c, and d are numbers satisfying the following conditions: 0.001?a?1.00, 0?b?0.999, 0?c?0.30, 0?d?0.30, and a+b+c+d=1.

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Abstract: A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

Abstract: A distance measuring device includes: a light emitting unit; a pixel array including a plurality of pixels arranged in a matrix; and a control unit calculating the distance to a measuring target. Each of the plurality of pixels includes: an avalanche photodiode; a primary accumulation region for temporarily holding a signal charge; and a plurality of memory elements provided in parallel with respect to the primary accumulation region. The control unit performs a plurality of times of light exposure at timings corresponding to different distance sections within one pulse period of outgoing light from the light emitting unit, allows signal charges generated after the respective times of light exposure to be accumulated in the different memory elements, and reads out the signal charges to calculate the distance to the measuring target.

Abstract: It is made possible to monitor the periphery of a target object more accurately, using an imaging device that generates distance image data by sub-range analysis. For a target object present across first and second distance zones adjacent to each other, a first position at a near end position of the first distance zone, a second position at a boundary position between the first and second distance zones, and a third position indicating the position at a far end position of the second distance zone are obtained. Location data of the target object is generated based on location information of the second position with respect to a straight line connecting the first position and third position.

Abstract: A crystal of a calcium phosphate that is any one selected from the group consisting of octacalcium phosphate, hydroxyapatite, fluorapatite, chlorapatite and carbonate apatite, in which a part of a plurality of calcium ions in a crystal structure of the crystal are replaced with a silver ion or a copper ion.

Abstract: The present invention provides a socket adapter 10 for an impact wrench to prevent a manipulator ring 60 from being intentionally slid, the socket adapter comprising: a main body 11 including a cylinder section 20 having an engagement hole 21 to be installed in an insertion square 90 of the impact wrench, a shank section 40 configured to attach or detach a socket 80, and a drum section 30 positioned between the cylinder section and the shank section; a ball locking mechanism 50 adapted to switch the socket between a locked state where the socket cannot be detached and an unlocked state where the socket can be attached and detached by protrusion and retraction of a ball 51 housed in the shank section; a manipulator ring 60 slidably fitted on the drum section in the axial direction and configured to control the protrusion and retraction of the ball; and a starting resistance imparting means 70 for increasing the starting resistance of the manipulator ring when the manipulator ring begins to slide from a locking

Abstract: A medical polymer material in which a phosphate group having a C—O—P chemical bond including elemental C in a main chain of a structural formula is present on a surface of a polymer material substantially free of phosphate and hydroxy groups except for ends in the structural formula.

Abstract: Provided is a resin composition for imprinting excellent in imprint properties and optical properties such as high refractive index and low haze. The invention relates to a resin composition for imprinting containing: (A) a polysiloxane resin represented by the following formula (1): (R1SiO3/2)a(R22SiO2/2)b(R33SiO1/2)c(SiO4/2)d wherein R1, R2, and R3 are each independently a hydrogen atom, a hydroxy group, an alkoxy group, a C1-C12 hydrocarbon group, or a C1-C12 substituent having one or more crosslinkable functional groups, with at least one of R1, R2, or R3 being a C1-C12 substituent having one or more crosslinkable functional groups, and when a plurality of R1s, R2s, or R3s are present, they may be different from one another; and a, b, c, and d are numbers satisfying the following conditions: 0.001?a?1.00, 0?b?0.999, 0?c?0.30, 0?d?0.30, and a+b+c+d=1.

Abstract: A solid-state image sensor includes at least two or more APDs formed on a substrate. First regions are arranged outside the APDs as viewed in plane. Adjacent ones of the APDs and the first regions are separated from each other through a separation region. A first voltage V21 is applied to a fourth semiconductor layer of the APD, and a second voltage V22 is applied to a fifth semiconductor layer of the first region. The first voltage V21 is higher than the second voltage V22.

Abstract: A photosensor includes a plurality of avalanche photodiodes (APD) provided on a first main surface, a first isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a first direction, and a second isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a second direction different from a direction of the first isolation region. The first isolation region and the second isolation region are depleted. At least one of the first isolation region or the second isolation region is terminated at a first connection portion at which the first isolation region and the second isolation region are connected.

Abstract: An immunoregulatory agent containing a regulatory agent that regulates Dedicator of cytokinesis 2 (DOCK2)-mediated Rac activation as an active ingredient is provided.