Patents by Inventor Yukie Suzuki
Yukie Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240402555Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: August 13, 2024Publication date: December 5, 2024Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 12066730Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: August 8, 2023Date of Patent: August 20, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Publication number: 20240027863Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: August 8, 2023Publication date: January 25, 2024Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 11726378Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: November 30, 2021Date of Patent: August 15, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Publication number: 20230211715Abstract: A vehicle entrance structure includes a body panel disposed in a rear part on a peripheral region of an entrance of a vehicle body, and configured to be exposed when a vehicle door is open. The body panel includes an assist surface having a predetermined area to support a hand of a user boarding or getting off of the vehicle. The assist surface is disposed at a higher level than a seat surface of an in-vehicle seat disposed beside the entrance.Type: ApplicationFiled: December 23, 2022Publication date: July 6, 2023Inventors: Tomoo NAKAMOTO, Noriyo INAGAKI, Yukie SUZUKI, Kan HAYASHIDA
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Publication number: 20220091453Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: November 30, 2021Publication date: March 24, 2022Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 11194207Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: June 26, 2020Date of Patent: December 7, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Publication number: 20200326572Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 10712625Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: December 24, 2019Date of Patent: July 14, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Patent number: 10678107Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: May 14, 2019Date of Patent: June 9, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Publication number: 20200133041Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: December 24, 2019Publication date: April 30, 2020Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Publication number: 20190265528Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: May 14, 2019Publication date: August 29, 2019Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Patent number: 10338447Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: September 8, 2017Date of Patent: July 2, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Patent number: 10236271Abstract: It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.Type: GrantFiled: July 10, 2014Date of Patent: March 19, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
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Patent number: 10079312Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.Type: GrantFiled: April 25, 2017Date of Patent: September 18, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Kosei Noda, Yoshiaki Oikawa
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Patent number: 9887291Abstract: A change in electrical characteristics is suppressed and reliability is improved in a semiconductor device provided with a transistor including an oxide semiconductor. A semiconductor device includes a transistor. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a first buffer film over the oxide semiconductor film, a second buffer film over the oxide semiconductor film, a source electrode electrically connected with the oxide semiconductor film, and a drain electrode electrically connected with the oxide semiconductor film. The source electrode is electrically connected with the oxide semiconductor film through the first buffer film. The drain electrode is electrically connected with the oxide semiconductor film through the second buffer film.Type: GrantFiled: March 18, 2015Date of Patent: February 6, 2018Assignee: Semiconductor Energy Laboratory Co., LTD.Inventors: Yukie Suzuki, Yoshiaki Oikawa
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Publication number: 20180011358Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: ApplicationFiled: September 8, 2017Publication date: January 11, 2018Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
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Publication number: 20170265507Abstract: [Problem] There exists a need for salt-free/sugar-free Rosaceae fruits, such as apricots and plums, extracts thereof, and products utilizing these, that have good storage properties. [Solution] By bringing about self-digestion of fruit at 65° C. or below, preferably at 45 to 60° C., the organic acid concentration is improved, and solubilization of pectin is promoted, making possible the manufacture of salt-free self-digested fruits and extracts thereof having good physical properties and storage properties, as well as making possible the manufacture of salt-free processed food products, cosmetics, or fermented food products, utilizing salt-free seasonings containing comparable concentrations of pectin and organic acids, or these salt-free self-digested fruits and salt-free self-digested fruit extracts.Type: ApplicationFiled: December 11, 2014Publication date: September 21, 2017Applicant: REGALO Lab Co., LTD.Inventor: Yukie SUZUKI
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Patent number: 9766526Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.Type: GrantFiled: September 21, 2015Date of Patent: September 19, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
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Publication number: 20170229585Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.Type: ApplicationFiled: April 25, 2017Publication date: August 10, 2017Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Kosei NODA, Yoshiaki OIKAWA