Patents by Inventor Yukie Suzuki

Yukie Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200326572
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Application
    Filed: June 26, 2020
    Publication date: October 15, 2020
    Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
  • Patent number: 10753248
    Abstract: A three-way catalyst article, and its use in an exhaust system for internal combustion engines, is disclosed. The catalyst article for treating exhaust gas comprises: a substrate; and a catalytic region on the substrate; wherein the catalytic region comprises a platinum group metal (PGM) component, an oxide, and a rare earth metal component; wherein the oxide is an inorganic oxide, an oxygen storage component (OSC) material, or a mixture thereof; wherein the rare earth metal component concentration by element on the surface of the oxide per unit specific surface area of the oxide is 1 ?mol/m2 to 20 ?mol/m2.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: August 25, 2020
    Assignee: Johnson Matthey Public Limited Company
    Inventors: Tomotaka Hirota, Yasunori Kurashima, Shuhei Nagaoka, Yukie Ohtsuka, Satoshi Sumiya, Takayuki Suzuki, Takashi Yamada
  • Patent number: 10745832
    Abstract: A material shape simulation apparatus for simulating deformation of a three-dimensional woven fiber material is provided and includes: an orientation vector field generation unit generating a model shape orientation vector field on three-dimensional meshes of a model shape of a three-dimensional woven fiber material obtained by stacking sheets of two-dimensional woven fabric made of X-yarn and Y-yarn and binding them with Z-yarn; a parameterization unit that searches for a gradient vector for calculating a material shape orientation vector field, being an orientation vector field of a material shape before deformation of the model shape, from the model shape orientation vector field; and an orientation vector updating unit that updates the model shape orientation vector field by applying a condition of preserving a volume between the model shape orientation vector field and the material shape orientation vector field and a condition that neither the X-yarn nor the Y-yarn expands or contracts.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: August 18, 2020
    Assignees: IHI CORPORATION, The University of Tokyo
    Inventors: Hiroyuki Hishida, Koichi Inagaki, Takeshi Nakamura, Fumiaki Watanabe, Kotaro Morioka, Yutaka Ohtake, Hiromasa Suzuki, Yukie Nagai
  • Patent number: 10712625
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: July 14, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
  • Patent number: 10678107
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: June 9, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
  • Patent number: 10650173
    Abstract: A design support apparatus supporting designing of a product which uses a fiber material includes a processor that creates a predicted shape model by predicting a shape of the product before a deformation processing. The processor: creates a 3-dimensional shape model of the product; creates curved shape models by separating the 3-dimensional shape model into two or more fiber layers; sets a correspondence relationship between the curved shape models; creates an orientation vector field in the curved shape models; and predicts the shape of the product before the deformation processing by developing the curved shape models on a flat surface based on the correspondence relationship between the curved shape models and the orientation vector field in the curved shape models, and creates the predicted shape model based on the predicted shape.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: May 12, 2020
    Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki Hishida, Koichi Inagaki, Takeshi Nakamura, Fumiaki Watanabe, Kotaro Morioka, Yutaka Ohtake, Hiromasa Suzuki, Yukie Nagai
  • Publication number: 20200133041
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Application
    Filed: December 24, 2019
    Publication date: April 30, 2020
    Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
  • Publication number: 20190265528
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Application
    Filed: May 14, 2019
    Publication date: August 29, 2019
    Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
  • Patent number: 10338447
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: July 2, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
  • Patent number: 10236271
    Abstract: It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: March 19, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
  • Patent number: 10079312
    Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.
    Type: Grant
    Filed: April 25, 2017
    Date of Patent: September 18, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Kosei Noda, Yoshiaki Oikawa
  • Patent number: 9887291
    Abstract: A change in electrical characteristics is suppressed and reliability is improved in a semiconductor device provided with a transistor including an oxide semiconductor. A semiconductor device includes a transistor. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a first buffer film over the oxide semiconductor film, a second buffer film over the oxide semiconductor film, a source electrode electrically connected with the oxide semiconductor film, and a drain electrode electrically connected with the oxide semiconductor film. The source electrode is electrically connected with the oxide semiconductor film through the first buffer film. The drain electrode is electrically connected with the oxide semiconductor film through the second buffer film.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: February 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Yukie Suzuki, Yoshiaki Oikawa
  • Publication number: 20180011358
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Application
    Filed: September 8, 2017
    Publication date: January 11, 2018
    Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Hideaki KUWABARA, Hajime KIMURA
  • Publication number: 20170265507
    Abstract: [Problem] There exists a need for salt-free/sugar-free Rosaceae fruits, such as apricots and plums, extracts thereof, and products utilizing these, that have good storage properties. [Solution] By bringing about self-digestion of fruit at 65° C. or below, preferably at 45 to 60° C., the organic acid concentration is improved, and solubilization of pectin is promoted, making possible the manufacture of salt-free self-digested fruits and extracts thereof having good physical properties and storage properties, as well as making possible the manufacture of salt-free processed food products, cosmetics, or fermented food products, utilizing salt-free seasonings containing comparable concentrations of pectin and organic acids, or these salt-free self-digested fruits and salt-free self-digested fruit extracts.
    Type: Application
    Filed: December 11, 2014
    Publication date: September 21, 2017
    Applicant: REGALO Lab Co., LTD.
    Inventor: Yukie SUZUKI
  • Patent number: 9766526
    Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: September 19, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura
  • Publication number: 20170229585
    Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.
    Type: Application
    Filed: April 25, 2017
    Publication date: August 10, 2017
    Inventors: Shunpei YAMAZAKI, Yukie SUZUKI, Kosei NODA, Yoshiaki OIKAWA
  • Patent number: 9653614
    Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: May 16, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Kosei Noda, Yoshiaki Oikawa
  • Patent number: 9564688
    Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: February 7, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukie Suzuki, Yasuyuki Arai, Shunpei Yamazaki
  • Publication number: 20160261048
    Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.
    Type: Application
    Filed: May 16, 2016
    Publication date: September 8, 2016
    Inventors: Yukie SUZUKI, Yasuyuki ARAI, Shunpei YAMAZAKI
  • Patent number: 9397311
    Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: July 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yasuo Nakamura, Yukie Suzuki, Yoshitaka Moriya