Patents by Inventor Yukiharu Uraoka

Yukiharu Uraoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190006525
    Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.
    Type: Application
    Filed: December 7, 2016
    Publication date: January 3, 2019
    Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, NISSIN ELECTRIC CO., LTD.
    Inventors: Yukiharu URAOKA, Haruka YAMAZAKI, Mami FUJII, Eiji TAKAHASHI
  • Patent number: 9187570
    Abstract: The present invention provides means useful for making devices, materials and the like that are excellent in photocatalytic activity, electric property or the like. Specifically, the present invention provides a fusion protein comprising a polypeptide portion capable of forming a multimer having an internal cavity, and a first peptide portion capable of binding to a first target substance and a second peptide portion capable of binding to a second target substance; a multimer of the fusion protein; a complex comprising the multimer of the fusion protein; and the like.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: November 17, 2015
    Assignee: Ajinomoto Co., Ltd.
    Inventors: Ippei Inoue, Ichiro Yamashita, Bin Zheng, Hisashi Yasueda, Yukiharu Uraoka, Yasuaki Ishikawa
  • Publication number: 20140150855
    Abstract: A functional material having excellent photocatalytic activity, electric characteristics and the like is provided. A porous structure body 10 comprises a first target material 20 and an aggregate body 30 formed by aggregation of the first material. The aggregate body 30 adheres to the first target material and is located so as to surround the first target material. The aggregate body has a plurality of first pores 32 unevenly distributed near the first target material in the aggregate body and a plurality of second pores 34 scattered over the aggregate body.
    Type: Application
    Filed: February 10, 2014
    Publication date: June 5, 2014
    Applicant: AJINOMOTO CO., INC.
    Inventors: Ippei INOUE, Ichiro Yamashita, Bin Zheng, Hisashi Yasueda, Yukiharu Uraoka, Yasuaki Ishikawa
  • Publication number: 20140045247
    Abstract: The present invention provides means useful for making devices, materials and the like that are excellent in photocatalytic activity, electric property or the like. Specifically, the present invention provides a fusion protein comprising a polypeptide portion capable of forming a multimer having an internal cavity, and a first peptide portion capable of binding to a first target substance and a second peptide portion capable of binding to a second target substance; a multimer of the fusion protein; a complex comprising the multimer of the fusion protein; and the like.
    Type: Application
    Filed: October 16, 2013
    Publication date: February 13, 2014
    Applicant: AJINOMOTO CO., INC.
    Inventors: IPPEI INOUE, ICHIRO YAMASHITA, BIN ZHENG, HISASHI YASUEDA, YUKIHARU URAOKA, YASUAKI ISHIKAWA
  • Publication number: 20120267258
    Abstract: In order to provide a method for electrochemically detecting an analyte which can detect an analyte with high detection sensitivity, when detecting an analyte S trapped on a working electrode, a label binding substance 90 in which a labeling substance 93 and a first binding substance 92 which traps the analyte S are at least retained on a support 91 composed of polypeptide is brought into contact with the analyte. Alternatively, a complex containing the analyte S and a label binding substance 290 in which a labeling substance 293 is retained on a binding substance 291 which binds to the analyte S via a modulator 292 is formed. Then, the labeling substance present on the working electrode is electrochemically detected.
    Type: Application
    Filed: April 20, 2012
    Publication date: October 25, 2012
    Applicants: NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, SYSMEX CORPORATION
    Inventors: Yukiharu URAOKA, Bin Zheng, Seigo SUZUKI, Hiroya KIRIMURA, Masayoshi SEIKE, Shigeki IWANAGA, Nobuyasu HORI
  • Patent number: 7901978
    Abstract: The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: March 8, 2011
    Assignee: National University Corporation Nara Institute of Science and Technology
    Inventors: Yukiharu Uraoka, Takashi Fuyuki, Hiroya Kirimura
  • Publication number: 20090050880
    Abstract: The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
    Type: Application
    Filed: March 28, 2006
    Publication date: February 26, 2009
    Applicant: National University Corporation Nara Institute of Science and Technology
    Inventors: Yukiharu Uraoka, Takashi Fuyuki, Hiroya Kirimura
  • Patent number: 6323663
    Abstract: A retainer board, holding a semiconductor wafer having a plurality of integrated circuit terminals for testing a semiconductor chip, is provided in confronting relation to a probe sheet having a plurality of probe terminals electrically connected to their corresponding integrated circuit terminals. An insulating substrate, having wiring electrically connected to the plural probe terminals, is provided on the probe sheet in opposed relation to the retainer board. An elastic member is interposed between the probe sheet and the insulating substrate. The retainer board and the probe sheet are brought into so closer relationship that each integrated circuit terminal of the semiconductor wafer held by the retainer board is electrically connected to its corresponding probe terminal of the probe sheet.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: November 27, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshirou Nakata, Toshio Yamada, Atsushi Fujiwara, Isao Miyanaga, Shin Hashimoto, Yukiharu Uraoka, Yasushi Okuda, Kenzou Hatada
  • Patent number: 6005401
    Abstract: A retainer board, holding a semiconductor wafer having a plurality of integrated circuit terminals for testing a semiconductor chip, is provided in confronting relation to a probe sheet having a plurality of probe terminals electrically connected to their corresponding integrated circuit terminals. An insulating substrate, having wiring electrically connected to the plural probe terminals, is provided on the probe sheet in opposed relation to the retainer board. An elastic member is interposed between the probe sheet and the insulating substrate. The retainer board and the probe sheet are brought into so closer relationship that each integrated circuit terminal of the semiconductor wafer held by the retainer board is electrically connected to its corresponding probe terminal of the probe sheet.
    Type: Grant
    Filed: April 14, 1997
    Date of Patent: December 21, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshirou Nakata, Toshio Yamada, Atsushi Fujiwara, Isao Miyanaga, Shin Hashimoto, Yukiharu Uraoka, Yasushi Okuda, Kenzou Hatada
  • Patent number: 5945834
    Abstract: A retainer board, holding a semiconductor wafer having a plurality of integrated circuit terminals for testing a semiconductor chip, is provided in confronting relation to a probe sheet having a plurality of probe terminals electrically connected to their corresponding integrated circuit terminals. An insulating substrate, having wiring electrically connected to the plural probe terminals, is provided on the probe sheet in opposed relation to the retainer board. An elastic member is interposed between the probe sheet and the insulating substrate. The retainer board and the probe sheet are brought into so closer relationship that each integrated circuit terminal of the semiconductor wafer held by the retainer board is electrically connected to its corresponding probe terminal of the probe sheet.
    Type: Grant
    Filed: February 29, 1996
    Date of Patent: August 31, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshirou Nakata, Toshio Yamada, Atsushi Fujiwara, Isao Miyanaga, Shin Hashimoto, Yukiharu Uraoka, Yasushi Okuda, Kenzou Hatada
  • Patent number: 5650336
    Abstract: A plurality of different constant currents are implanted into an element of a semiconductor device such as a gate oxide film and a metal wire, a charge-to-breakdown (or a breakdown time) is measured from a result of current implantation, a relationship between a constant current value and the charge-to-breakdown (or a breakdown time) is determined, and a time-sequence change in the current during application of a constant voltage is presumed. Next, of a time-sequence change characteristic of the current during application of the constant voltage, current values during the respective minute periods are approximated to a constant current value. Consumption ratios of the life time due to the respective current values are calculated based on a relationship between the constant current value and the charge-to-breakdown (or a breakdown time).
    Type: Grant
    Filed: September 18, 1995
    Date of Patent: July 22, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koji Eriguchi, Yukiharu Uraoka
  • Patent number: 5598100
    Abstract: A luminescence amount detecting part detects a weak optical radiation which a transistor in a semiconductor integrated circuit emits owing to a hot carrier effect. An output thereof is image-processed by an image processing part. An information storage part stores information on a transistor width and information on a switching frequency at an execution of a test pattern into each transistor. A switching time calculating part evaluates a switching time of the transistor from respective outputs of the image processing part and the information storage part to output a result. Thus the switching time can be evaluated easily without a electron beam tester whose operation is complicated. A delay time can be evaluated by detecting a luminescence amount which changes depending on a gate voltage, instead of measuring a gate voltage.
    Type: Grant
    Filed: November 1, 1995
    Date of Patent: January 28, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshinori Maeda, Yukiharu Uraoka
  • Patent number: 5504431
    Abstract: A luminescence amount detecting part detects a weak optical radiation which a transistor in a semiconductor integrated circuit emits owing to a hot carrier effect. An output thereof is image-processed by an image processing part. An information storage part stores information on a transistor width and information on a switching frequency at an execution of a test pattern into each transistor. A switching time calculating part evaluates a switching time of the transistor from respective outputs of the image processing part and the information storage part to output a result. Thus the switching time can be evaluated easily without a electron beam tester whose operation is complicated. A delay time can be evaluated by detecting a luminescence amount which changes depending on a gate voltage, instead of measuring a gate voltage.
    Type: Grant
    Filed: December 4, 1992
    Date of Patent: April 2, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshinori Maeda, Yukiharu Uraoka