Patents by Inventor Yukihiro Kanechika

Yukihiro Kanechika has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10508035
    Abstract: Aluminum nitride crystal particles, aluminum nitride powders containing the same, production processes for both of them, an organic polymer composition comprising the aluminum nitride crystal particles and a sintered body. Each of the aluminum nitride crystal particles has a flat octahedral shape in a direction where hexagonal faces are opposed to each other, which is composed of two opposed hexagonal faces and 6 rectangular faces, in which the average distance “D” between two opposed corners of each of the hexagonal faces is 3 to 110 ?m, the length “L” of the short side of each of the rectangular faces is 2 to 45 ?m, and L/D is 0.05 to 0.8; each of the hexagonal faces and each of the rectangular faces cross each other to form a curve without forming a single ridge; and the true destiny is 3.20 to 3.26 g/cm3.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: December 17, 2019
    Assignee: TOKUYAMA CORPORATION
    Inventors: Yutaka Fukunaga, Yukihiro Kanechika, Meng Wang, Ken Sugawara
  • Publication number: 20190031510
    Abstract: To provide an aluminum nitride particle having a hexagonal columnar barrel part and bowl-like projection parts at both ends of the columnar part, wherein the long diameter (D) of the barrel part is 10 to 250 ?m, the ratio (L1/D) of the distance (L1) between the apexes of the two projection pars to the long diameter (D) of the barrel part is 0.7 to 1.3, and the percentage of the length or thickness (L2) of the barrel part to the distance (L1) between the apexes of the two projection parts is 10 to 60%. The aluminum nitride particle can provide high heat conductivity and excellent electric insulation to a resin when it is filled into the resin.
    Type: Application
    Filed: January 25, 2017
    Publication date: January 31, 2019
    Applicant: TOKUYAMA CORPORATION
    Inventors: Akimasa KURAMOTO, Kikuo YAMAMOTO, Mou OU, Saiko FUJII, Yukihiro KANECHIKA, Teruhiko NAWATA
  • Patent number: 9944565
    Abstract: After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than ?50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 ?m, a ten-point average roughness Rz of 0.7 to 1.1 ?m and a maximum height Ry of 0.9 to 1.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: April 17, 2018
    Assignees: DOWA METALTECH CO., LTD., TOKUYAMA CORPORATION
    Inventors: Hideyo Osanai, Yukihiro Kitamura, Hiroto Aoki, Yukihiro Kanechika, Ken Sugawara, Yasuko Takeda
  • Patent number: 9403680
    Abstract: A method for producing sintered aluminum nitride granules includes a reduction nitridation step of carrying out the reduction nitridation of porous alumina granules at a temperature of 1400 to 1700° C. inclusive to produce porous aluminum nitride granules; and a sintering step of sintering the porous aluminum nitride granules, which are produced in the reduction nitridation step, at a temperature of 1580 to 1900° C. inclusive.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: August 2, 2016
    Assignee: Tokuyama Corporation
    Inventors: Yutaka Fukunaga, Yukihiro Kanechika
  • Patent number: 9399577
    Abstract: Provided is a method for producing a water-resistant aluminum nitride powder capable of adding a good water-resistant property to an aluminum nitride powder wherein yttria exists on a particle surface. The method is for producing a water-resistant aluminum nitride powder by carrying out a treatment to a particle surface of an aluminum nitride powder, the method including the successive steps of (i) making an aluminum nitride powder contact with an acid solution wherein yttria exists at least on a particle surface of the aluminum nitride powder; and (ii) making the aluminum nitride powder contact with a phosphorous acid compound, wherein the amount of yttria which is extracted when the aluminum nitride powder is filtered, washed with water, and dried after the step (i) and is thereafter subjected to extraction with 1 mol/L hydrochloric acid is no more than 1000 mg per 100 g of the aluminum nitride powder.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: July 26, 2016
    Assignee: TOKUYAMA CORPORATION
    Inventors: Megumu Tamagaki, Yukihiro Kanechika
  • Publication number: 20150376009
    Abstract: A method for producing sintered aluminum nitride granules includes a reduction nitridation step of carrying out the reduction nitridation of porous alumina granules at a temperature of 1400 to 1700° C. inclusive to produce porous aluminum nitride granules; and a sintering step of sintering the porous aluminum nitride granules, which are produced in the reduction nitridation step, at a temperature of 1580 to 1900° C. inclusive.
    Type: Application
    Filed: February 4, 2013
    Publication date: December 31, 2015
    Inventors: Yutaka Fukunaga, Yukihiro Kanechika
  • Publication number: 20150353355
    Abstract: Aluminum nitride crystal particles, aluminum nitride powders containing the same, production processes for both of them, an organic polymer composition comprising the aluminum nitride crystal particles and a sintered body. Each of the aluminum nitride crystal particles has a flat octahedral shape in a direction where hexagonal faces are opposed to each other, which is composed of two opposed hexagonal faces and 6 rectangular faces, in which the average distance “D” between two opposed corners of each of the hexagonal faces is 3 to 110 ?m, the length “L” of the short side of each of the rectangular faces is 2 to 45 ?m, and L/D is 0.05 to 0.8; each of the hexagonal faces and each of the rectangular faces cross each other to form a curve without forming a single ridge; and the true destiny is 3.20 to 3.26 g/cm3.
    Type: Application
    Filed: February 6, 2014
    Publication date: December 10, 2015
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yutaka FUKUNAGA, Yukihiro KANECHIKA, Meng WANG, Ken SUGAWARA
  • Publication number: 20150284296
    Abstract: After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than ?50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 ?m, a ten-point average roughness Rz of 0.7 to 1.1 ?m and a maximum height Ry of 0.9 to 1.
    Type: Application
    Filed: November 20, 2012
    Publication date: October 8, 2015
    Applicants: TOKUYAMA CORPORATION, DOWA METALTECH CO., LTD
    Inventors: Hideyo Osanai, Yukihiro Kitamura, Hiroto Aoki, Yukihiro Kanechika, Ken Sugawara, Yasuko Takeda
  • Patent number: 9145301
    Abstract: A method for producing an aluminum nitride powder includes mixing an alumina powder having an average particle diameter of not more than 5 ?m; an eutectic melting agent; and a carbon powder are mixed to obtain a mixture thereof, and reductively nitriding the mixture by firing at a higher temperature than a melting point of the eutectic melting agent, while maintaining a nitrogen ratio within a range of 60 to 85 vol % in an atmosphere of mixed gases of nitrogen and carbon monoxide until a nitriding ratio of the alumina powder reaches at least 50%.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: September 29, 2015
    Assignee: Tokuyama Corporation
    Inventors: Yutaka Fukunaga, Yukihiro Kanechika
  • Publication number: 20150225238
    Abstract: Provided is a method for producing a water-resistant aluminum nitride powder capable of adding a good water-resistant property to an aluminum nitride powder wherein yttria exists on a particle surface. The method is for producing a water-resistant aluminum nitride powder by carrying out a treatment to a particle surface of an aluminum nitride powder, the method including the successive steps of (i) making an aluminum nitride powder contact with an acid solution wherein yttria exists at least on a particle surface of the aluminum nitride powder; and (ii) making the aluminum nitride powder contact with a phosphorous acid compound, wherein the amount of yttria which is extracted when the aluminum nitride powder is filtered, washed with water, and dried after the step (i) and is thereafter subjected to extraction with 1 mol/L hydrochloric acid is no more than 1000 mg per 100 g of the aluminum nitride powder.
    Type: Application
    Filed: September 6, 2013
    Publication date: August 13, 2015
    Inventors: Megumu Tamagaki, Yukihiro Kanechika
  • Publication number: 20150086467
    Abstract: A method for producing an aluminum nitride powder includes mixing an alumina powder having an average particle diameter of not more than 5 ?m; an eutectic melting agent; and a carbon powder are mixed to obtain a mixture thereof, and reductively nitriding the mixture by firing at a higher temperature than a melting point of the eutectic melting agent, while maintaining a nitrogen ratio within a range of 60 to 85 vol % in an atmosphere of mixed gases of nitrogen and carbon monoxide until a nitriding ratio of the alumina powder reaches at least 50%.
    Type: Application
    Filed: March 27, 2013
    Publication date: March 26, 2015
    Applicant: Tokuyama Corporation
    Inventors: Yutaka Fukunaga, Yukihiro Kanechika
  • Patent number: 8921980
    Abstract: An aluminum nitride single crystal in the form of polygonal columns, the polygonal columns having the following properties [a] to [c]: [a] the content of a metal impurity is below a detection limit, [b] the average bottom area is from 5×103 to 2×105 ?m2, and [c] the average height is 50 ?m to 5 mm. The above aluminum nitride single crystal is preferably obtainable in a method including the steps of sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.
    Type: Grant
    Filed: November 18, 2008
    Date of Patent: December 30, 2014
    Assignees: Meijo University, Tokuyama Corporation
    Inventors: Hiroshi Amano, Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 8703041
    Abstract: [Problems] To provide a method of producing, easily and in a high yield, a reformed aluminum nitride sintered body having very excellent light transmission property which can be favorably used as a light-transmitting cover particularly for light sources having high luminous efficiencies. [Means for Solution] An aluminum nitride sintered body having a concentration of metal impurities excluding aluminum of not more than 150 ppm, an oxygen concentration of not more than 0.5% by weight and a relative density of not less than 95% is used as a starting material. The aluminum nitride sintered body is heat-treated in an oxidizing atmosphere in a temperature region of 1400 to 2000° C. to increase the oxygen concentration by not less than 0.03% by weight.
    Type: Grant
    Filed: September 2, 2008
    Date of Patent: April 22, 2014
    Assignee: Tokuyama Corporation
    Inventors: Yuriko Kaito, Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 8597743
    Abstract: Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 ?m and 20 ?m, and also has an arithmetic mean surface height Ra of 1 ?m or less and a maximum height Rz of 10 ?m or less in the unpolished condition after firing.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: December 3, 2013
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 8148283
    Abstract: A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: April 3, 2012
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7973481
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: July 5, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yasuyuki Yamamoto, Yukihiro Kanechika, Masakatsu Maeda
  • Patent number: 7960915
    Abstract: A cement for bonding an arc tube body made of an aluminum nitride sintered body and an electrode support made of molybdenum achieves high gas tightness in the obtainable arc tube without impairing the excellent translucency of the aluminum nitride sintered body. The cement contains a molybdenum powder and an aluminum nitride powder, and the total amount of metalloid elements, rare-earth elements and metal elements (except the rare-earth elements and aluminum element) corresponding to the following conditions (1) and (2) is 300 ppm or less: (1) metal elements having a melting point of 2000° C. or lower, and (2) metal elements having an ion radius smaller than that of aluminum.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: June 14, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7876053
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Grant
    Filed: June 20, 2005
    Date of Patent: January 25, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yasuyuki Yamamoto, Yukihiro Kanechika, Masakatsu Maeda
  • Publication number: 20100259160
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Application
    Filed: April 26, 2010
    Publication date: October 14, 2010
    Applicant: Tokuyama Corporation
    Inventors: Yasuyuki YAMAMOTO, Yukihiro KANECHIKA, Masakatsu MAEDA
  • Publication number: 20100255304
    Abstract: The present invention provides an aluminum nitride single crystal forming polygonal columns, the polygonal columns having the following properties [a] to [c]: [a] the content of a metal impurity is below the detection limit, [b] the average bottom area is from 5×103 to 2×105 ?m2, and [c] the average height is 50 ?m to 5 mm. The above aluminum nitride single crystal forming polygonal columns is preferably obtainable by sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.
    Type: Application
    Filed: November 18, 2008
    Publication date: October 7, 2010
    Applicants: MEIJO UNIVERSITY, TOKUYAMA CORPORATION
    Inventors: Hiroshi Amano, Yukihiro Kanechika, Masanobu Azuma