Patents by Inventor Yukihiro Kanechika

Yukihiro Kanechika has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7973481
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: July 5, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yasuyuki Yamamoto, Yukihiro Kanechika, Masakatsu Maeda
  • Patent number: 7960915
    Abstract: A cement for bonding an arc tube body made of an aluminum nitride sintered body and an electrode support made of molybdenum achieves high gas tightness in the obtainable arc tube without impairing the excellent translucency of the aluminum nitride sintered body. The cement contains a molybdenum powder and an aluminum nitride powder, and the total amount of metalloid elements, rare-earth elements and metal elements (except the rare-earth elements and aluminum element) corresponding to the following conditions (1) and (2) is 300 ppm or less: (1) metal elements having a melting point of 2000° C. or lower, and (2) metal elements having an ion radius smaller than that of aluminum.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: June 14, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7876053
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Grant
    Filed: June 20, 2005
    Date of Patent: January 25, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yasuyuki Yamamoto, Yukihiro Kanechika, Masakatsu Maeda
  • Publication number: 20100259160
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Application
    Filed: April 26, 2010
    Publication date: October 14, 2010
    Applicant: Tokuyama Corporation
    Inventors: Yasuyuki YAMAMOTO, Yukihiro KANECHIKA, Masakatsu MAEDA
  • Publication number: 20100255304
    Abstract: The present invention provides an aluminum nitride single crystal forming polygonal columns, the polygonal columns having the following properties [a] to [c]: [a] the content of a metal impurity is below the detection limit, [b] the average bottom area is from 5×103 to 2×105 ?m2, and [c] the average height is 50 ?m to 5 mm. The above aluminum nitride single crystal forming polygonal columns is preferably obtainable by sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.
    Type: Application
    Filed: November 18, 2008
    Publication date: October 7, 2010
    Applicants: MEIJO UNIVERSITY, TOKUYAMA CORPORATION
    Inventors: Hiroshi Amano, Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20100233393
    Abstract: A process for producing an aluminum nitride sintered body having improved light transmission properties includes the step of subjecting an ordinary aluminum nitride sintered body to thermal treatment in an inert atmosphere at a temperature of from 1300 to 1400° C. for at least 1 hr. A cover for light sources is produced by the process and includes a hollow aluminum nitride sintered body having a light transmittance in the visible light region of at least 87%, which body is obtainable by thermally treating a hollow aluminum nitride sintered body in an inert atmosphere at a temperature of 1300 to 1400° C. for at least 1 hr.
    Type: Application
    Filed: March 13, 2007
    Publication date: September 16, 2010
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20100183860
    Abstract: [Problems] To provide a method of producing, easily and in a high yield, a reformed aluminum nitride sintered body having very excellent light transmission property which can be favorably used as a light-transmitting cover particularly for light sources having high luminous efficiencies. [Means for Solution] An aluminum nitride sintered body having a concentration of metal impurities excluding aluminum of not more than 150 ppm, an oxygen concentration of not more than 0.5% by weight and a relative density of not less than 95% is used as a starting material. The aluminum nitride sintered body is heat-treated in an oxidizing atmosphere in a temperature region of 1400 to 2000° C. to increase the oxygen concentration by not less than 0.03% by weight.
    Type: Application
    Filed: September 2, 2008
    Publication date: July 22, 2010
    Inventors: Yuriko Kaito, Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7737461
    Abstract: A light-emitting element storing package which ensures the efficient reflection of light emitted by a light-emitting element by a reflector frame and thereby improves the brightness of the emitted light, and a method of manufacturing the same are provided. In a light-emitting element storing package includes: an insulating substrate consisting of a ceramic board, a reflector frame composed of a ceramic material, joined to the upper surface of the substrate along its outer edge and having an inner wall surface defining a light-reflecting surface, and a wiring pattern layer formed on the upper surface of the substrate for connection with a light-emitting element, a light-emitting element storing concave portion, which is defined by the substrate and the reflector frame, and in which the light-emitting element is mounted on the wiring pattern layer, the reflector frame is mainly composed of nitride ceramics and its light-reflecting surface is composed of white ceramics.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: June 15, 2010
    Assignee: Tokuyama Corporation
    Inventors: Masakatsu Maeda, Yasuyuki Yamamoto, Yukihiro Kanechika
  • Publication number: 20100093514
    Abstract: A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less.
    Type: Application
    Filed: February 4, 2008
    Publication date: April 15, 2010
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20100015370
    Abstract: A process for producing integrated bodies from an aluminum nitride sintered body and a high-melting point metal member includes the steps of: (I) forming an aluminum nitride porous layer on a planned joint surface of the aluminum nitride sintered body; and (II) causing a mixture paste including aluminum nitride and a high-melting point metal to be present between the aluminum nitride porous layer and a planned joint surface of the high-melting point metal member while impregnating the porous layer with the mixture paste, and sintering the aluminum nitride and high-melting point metal in the mixture paste.
    Type: Application
    Filed: October 22, 2007
    Publication date: January 21, 2010
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20090174303
    Abstract: A cement for bonding an arc tube body made of an aluminum nitride sintered body and an electrode support made of molybdenum achieves high gas tightness in the obtainable arc tube without impairing the excellent translucency of the aluminum nitride sintered body. The cement contains a molybdenum powder and an aluminum nitride powder, and the total amount of metalloid elements, rare-earth elements and metal elements (except the rare-earth elements and aluminum element) corresponding to the following conditions (1) and (2) is 300 ppm or less: (1) metal elements having a melting point of 2000° C. or lower, and (2) metal elements having an ion radius smaller than that of aluminum.
    Type: Application
    Filed: December 15, 2006
    Publication date: July 9, 2009
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20090173437
    Abstract: [Problem] It is an object to provide a joining method, whereby even ceramics having an extremely small dielectric loss factor such as aluminum nitride can be joined efficiently and tightly. [Means for Resolution] A method of joining ceramics of the present invention is a method of heating ceramics of the same kind or different kinds by inducing self-heating of the ceramics by electromagnetic wave irradiation and thereby joining the ceramics together, and includes preheating a surface to be joined of the ceramic by a heating means that includes an auxiliary heating means other than the self-heating.
    Type: Application
    Filed: March 27, 2007
    Publication date: July 9, 2009
    Inventors: Yukihiro Kanechika, Masanobu Azuma, Masaki Yasuoka, Koji Watari
  • Patent number: 7553788
    Abstract: An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: June 30, 2009
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20090155625
    Abstract: [Problem] It is an object to provide a joining method that enables to join aluminum nitride sinters together efficiently and tightly. [Means for solution] A method of joining an aluminum nitride sinter includes placing an inclusion including a sintering aid between a surface to be joined of one aluminum nitride sinter and a surface to be joined of the other aluminum nitride sinter, and heating the inclusion by electromagnetic wave irradiation, thereby joining the aluminum nitride sinters together.
    Type: Application
    Filed: March 29, 2007
    Publication date: June 18, 2009
    Inventors: Yukihiro Kanechika, Masanobu Azuma, Masaki Yasuoka, Koji Watari
  • Publication number: 20090041961
    Abstract: Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 ?m and 20 ?m, and also has an arithmetic mean surface height Ra of 1 ?m or less and a maximum height Rz of 10 ?m or less in the unpolished condition after firing.
    Type: Application
    Filed: August 4, 2006
    Publication date: February 12, 2009
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20080300128
    Abstract: An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
    Type: Application
    Filed: August 13, 2008
    Publication date: December 4, 2008
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20080284309
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Application
    Filed: June 20, 2005
    Publication date: November 20, 2008
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yasuyuki Yamamoto, Yukihiro Kanechika, Masakatsu Maeda
  • Publication number: 20080076658
    Abstract: [Object] It is an object of the present invention to provide an aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. [Solution means] The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
    Type: Application
    Filed: September 26, 2006
    Publication date: March 27, 2008
    Applicant: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7319080
    Abstract: An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 ?m, and having a pore area ratio of not larger than 1×10?7, a pore density of not larger than 0.05 pores/mm2 of pores having diameters of not smaller than 1 ?m, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: January 15, 2008
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Toshikatsu Miki, Ayako Kai
  • Publication number: 20070272938
    Abstract: A light-emitting element storing package which ensures the efficient reflection of light emitted by a light-emitting element by a reflector frame and thereby improves the brightness of the emitted light, and a method of manufacturing the same are provided. The light-emitting element storing package includes: an insulating substrate consisting of a ceramic board, a reflector frame composed of a ceramic material, joined to the upper surface of the substrate along its outer edge and having an inner wall surface defining a light-reflecting surface, and a wiring pattern layer formed on the upper surface of the substrate for connection with a light-emitting element, a light-emitting element storing concave portion, which is defined by the substrate and the reflector frame, and in which the light-emitting element is mounted on the wiring pattern layer, the reflector frame is mainly composed of nitride ceramics and its light-reflecting surface is composed of white ceramics.
    Type: Application
    Filed: August 3, 2005
    Publication date: November 29, 2007
    Applicant: Tokuyama Corporation
    Inventors: Masakatsu Maeda, Yasuyuki Yamamoto, Yukihiro Kanechika