Abstract: The present technology relates to a solid-state imaging apparatus capable of suppressing occurrence of color mixing, a method for manufacturing the solid-state imaging apparatus, and an electronic device. The solid-state imaging apparatus includes a plurality of pixels arranged in a pixel region. Each of the pixels has: a first optical filter layer disposed on a photoelectric conversion unit; a second optical filter layer disposed on the first optical filter layer; and a separation wall separating at least a part of the first optical filter layer for each of the pixels. Either the first optical filter layer or the second optical filter layer in at least one of the pixels is formed by an infrared cut filter, while the other is formed by a color filter. The present technology can be applied to a CMOS image sensor including a visible light pixel.

Abstract: An imaging device and electronic apparatus incorporating an imaging device are provided. The imaging device includes a substrate and a plurality of photoelectric conversion units formed in the substrate. Each photoelectric conversion unit in the plurality of photoelectric conversion units is associated with at least one corresponding color filter in the plurality of color filters. The imaging device further includes a plurality of infrared light filters, wherein at least some of the photoelectric conversion units in the plurality of photoelectric conversion units are associated with at least one corresponding infrared light filter in the plurality of infrared light filters.

Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

Abstract: An imaging device and electronic apparatus incorporating an imaging device are provided. The imaging device includes a substrate and a plurality of photoelectric conversion units formed in the substrate. Each photoelectric conversion unit in the plurality of photoelectric conversion units is associated with at least one corresponding color filter in the plurality of color filters. The imaging device further includes a plurality of infrared light filters, wherein at least some of the photoelectric conversion units in the plurality of photoelectric conversion units are associated with at least one corresponding infrared light filter in the plurality of infrared light filters.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: A light-shielding body that shields incident light from an adjacent pixel is easily formed even in a case where the pixel is made finer. An imaging element is provided with a photoelectric conversion unit, an insulating film, an incident light transmitting film, and a light-shielding body. The photoelectric conversion unit is formed in a semiconductor substrate to perform photoelectric conversion of incident light from a subject and is arranged in a plurality of pixels. The insulating film is arranged on a plurality of pixels to insulate the semiconductor substrate. The incident light transmitting film is arranged adjacent to the insulating film of the plurality of pixels and transmits the incident light. The light-shielding body is arranged in a groove formed in the incident light transmitting film on a peripheral edge of each of the plurality of pixels to shield the incident light.

Abstract: The present technology relates to a solid-state imaging apparatus capable of suppressing occurrence of color mixing, a method for manufacturing the solid-state imaging apparatus, and an electronic device. The solid-state imaging apparatus includes a plurality of pixels arranged in a pixel region. Each of the pixels has: a first optical filter layer disposed on a photoelectric conversion unit; a second optical filter layer disposed on the first optical filter layer; and a separation wall separating at least a part of the first optical filter layer for each of the pixels. Either the first optical filter layer or the second optical filter layer in at least one of the pixels is formed by an infrared cut filter, while the other is formed by a color filter. The present technology can be applied to a CMOS image sensor including a visible light pixel.

Abstract: The present technology relates to a solid-state imaging apparatus capable of suppressing occurrence of color mixing, a method for manufacturing the solid-state imaging apparatus, and an electronic device. The solid-state imaging apparatus includes a plurality of pixels arranged in a pixel region. Each of the pixels has: a first optical filter layer disposed on a photoelectric conversion unit; a second optical filter layer disposed on the first optical filter layer; and a separation wall separating at least a part of the first optical filter layer for each of the pixels. Either the first optical filter layer or the second optical filter layer in at least one of the pixels is formed by an infrared cut filter, while the other is formed by a color filter. The present technology can be applied to a CMOS image sensor including a visible light pixel.

Abstract: An imaging device and electronic apparatus incorporating an imaging device are provided. The imaging device includes a substrate and a plurality of photoelectric conversion units formed in the substrate. Each photoelectric conversion unit in the plurality of photoelectric conversion units is associated with at least one corresponding color filter in the plurality of color filters. The imaging device further includes a plurality of infrared light filters, wherein at least some of the photoelectric conversion units in the plurality of photoelectric conversion units are associated with at least one corresponding infrared light filter in the plurality of infrared light filters.

Abstract: The present technology relates to a solid-state imaging element, a manufacturing method of the same, and an electronic device that achieve the extension of a dynamic range by making a difference in light-receiving sensitivity between low-sensitivity pixels and high-sensitivity pixels without changing spectral characteristics. The solid-state imaging element includes a pixel array portion in which two kinds of pixels different in light-receiving sensitivity, high-sensitivity pixels and low-sensitivity pixels are arrayed. The low-sensitivity pixels have a gray filter on or under a color filter to decrease light transmission factor in a visible-light region by a predetermined ratio. The present technology is applicable to solid-state imaging elements and the like, for example.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

Abstract: The present technology relates to a solid-state imaging apparatus capable of suppressing occurrence of color mixing, a method for manufacturing the solid-state imaging apparatus, and an electronic device. The solid-state imaging apparatus includes a plurality of pixels arranged in a pixel region. Each of the pixels has: a first optical filter layer disposed on a photoelectric conversion unit; a second optical filter layer disposed on the first optical filter layer; and a separation wall separating at least a part of the first optical filter layer for each of the pixels. Either the first optical filter layer or the second optical filter layer in at least one of the pixels is formed by an infrared cut filter, while the other is formed by a color filter. The present technology can be applied to a CMOS image sensor including a visible light pixel.

Abstract: The present technology relates to a solid-state imaging element, a manufacturing method of the same, and an electronic device that achieve the extension of a dynamic range by making a difference in light-receiving sensitivity between low-sensitivity pixels and high-sensitivity pixels without changing spectral characteristics. The solid-state imaging element includes a pixel array portion in which two kinds of pixels different in light-receiving sensitivity, high-sensitivity pixels and low-sensitivity pixels are arrayed. The low-sensitivity pixels have a gray filter on or under a color filter to decrease light transmission factor in a visible-light region by a predetermined ratio. The present technology is applicable to solid-state imaging elements and the like, for example.