Patents by Inventor Yukinao Kaga

Yukinao Kaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10559485
    Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: February 11, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Yukinao Kaga, Ryosuke Yoshida
  • Patent number: 10388530
    Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: August 20, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Kazuhiro Harada, Yukinao Kaga, Hideharu Itatani, Hiroshi Ashihara
  • Patent number: 10366894
    Abstract: A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: July 30, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yukinao Kaga, Arito Ogawa
  • Publication number: 20190157089
    Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 23, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
  • Publication number: 20190093222
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuyuki OKUDA, Masayoshi MINAMI, Yoshinobu NAKAMURA, Kosuke TAKAGI, Yukinao KAGA, Yuji TAKEBAYASHI
  • Publication number: 20190096663
    Abstract: A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Yukinao KAGA, Kazuhiro HARADA, Motomu DEGAI
  • Publication number: 20190093224
    Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Ryosuke YOSHIDA, Yukinao KAGA, Yuji TAKEBAYASHI, Masanori SAKAI, Atsushi HIRANO
  • Publication number: 20180374734
    Abstract: A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.
    Type: Application
    Filed: August 10, 2018
    Publication date: December 27, 2018
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Atsushi HIRANO, Yuji TAKEBAYASHI, Yukinao KAGA, Masanori SAKAI, Masakazu SHIMADA
  • Publication number: 20180350638
    Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.
    Type: Application
    Filed: August 9, 2018
    Publication date: December 6, 2018
    Inventors: Yukinao KAGA, Ryosuke YOSHIDA
  • Publication number: 20180247819
    Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).
    Type: Application
    Filed: April 24, 2018
    Publication date: August 30, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
  • Patent number: 9972500
    Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: May 15, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
  • Publication number: 20170287716
    Abstract: A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.
    Type: Application
    Filed: June 15, 2017
    Publication date: October 5, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventor: Yukinao KAGA
  • Patent number: 9650715
    Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: May 16, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yukinao Kaga, Tatsuyuki Saito, Masanori Sakai, Takashi Yokogawa
  • Publication number: 20170047227
    Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Application
    Filed: October 26, 2016
    Publication date: February 16, 2017
    Inventors: Yukinao KAGA, Arito OGAWA, Atsuro SEINO, Atsuhiko ASHITANI, Ryohei MAENO, Masanori SAKAI
  • Patent number: 9508555
    Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: November 29, 2016
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
  • Patent number: 9472398
    Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: October 18, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
  • Patent number: 9466477
    Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: October 11, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
  • Patent number: 9416446
    Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: August 16, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
  • Publication number: 20160196978
    Abstract: A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.
    Type: Application
    Filed: March 11, 2016
    Publication date: July 7, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yukinao KAGA, Arito OGAWA
  • Patent number: 9340873
    Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 17, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa