Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: A tool that suppresses or altogether eliminates arcing between a substrate pedestal and substrate is disclosed. The tool includes a processing chamber, a substrate pedestal for supporting a substrate within the processing chamber, and shower head positioned within the processing chamber. The shower head is arranged to dispense gas that is turned into a plasma, which develops a DC self-bias potential on the substrate surface. The tool also includes a bias control system configured to induce a DC potential to the substrate at a deliberate target electrical potential.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: A substrate support configured to support a substrate having a diameter D comprises a first inner electrode and a second inner electrode that are each D-shaped, define a first outer diameter that is less than D, and are configured to be connected to an electrostatic chuck voltage to clamp the substrate to the substrate support. An outer electrode comprises a ring-shaped outer portion that surrounds the first inner electrode and the second inner electrode and a center portion that pass between the first inner electrode and the second inner electrode to connect to opposite sides of an inner diameter of the ring-shaped outer portion. The inner diameter of the ring-shaped outer portion is greater than the diameter D such that the inner diameter of the ring-shaped outer portion and intersections between the center portion and the ring-shaped outer portion are located radially outside of the diameter D of the substrate.

Abstract: Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.

Abstract: A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.

Abstract: An apparatus to determine occurrence of an anomalous plasma event occurring at or near a process station of a multi-station integrated circuit fabrication chamber is disclosed. In particular embodiments, optical emissions generated responsive to the anomalous plasma event may be detected by at least one photosensor of a plurality of photosensors. A processor may cooperate with the plurality of photosensors to determine that the anomalous plasma event has occurred at or near by a particular process station of the multi-station integrated circuit fabrication chamber.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: A substrate processing tool capable of forming an carbon layer on a substrate by generating a plasma including carbon and non-carbon ions in a processing chamber, suspending the carbon and non-carbon ions in the processing chamber, removing mostly the suspended non-carbon ions from the processing chamber, and bombarding the substrate surface with mostly carbon ions. The one or more steps of the above sequence may be repeated until the carbon layer is of desired thickness.

Abstract: An apparatus for supporting a wafer during a plasma processing operation includes a pedestal configured to have bottom surface and a top surface and a column configured to support the pedestal at a central region of the bottom surface of the pedestal. An electrical insulating layer is disposed over the top surface of the pedestal. An electrically conductive layer is disposed over the top surface of the electrical insulating layer. At least three electrically conductive support structures are distributed on the electrically conductive layer. The at least three support structures are configured to interface with a bottom surface of a wafer to physically support the wafer and electrically connect to the wafer. An electrical connection extends from the electrically conductive layer to connect with a positive terminal of a direct current power supply at a location outside of the pedestal.

Abstract: A plasma tool in which the generation of two or more plasmas in a processing chamber used for processing a substrate is modulated either temporally, spatially, or both. The modulation of the two plasmas is used for the formation of Diamond Like Carbon (DLC) layers on substrates. One plasma is used for forming an amorphous carbon layer, while the second plasma is used for converting the amorphous carbon layer to a DLC by ion bombardment.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: In particular embodiments, anomalous plasma events, which may include formation of an electric arc in a semiconductor processing chamber, may be detected and mitigated. In certain embodiments, a method may include detecting an optical signal emitted by a plasma, converting the optical signal to a voltage signal, and forming an adjusted voltage signal. Responsive to determining that the changes associated with the adjusted voltage signal exceed a threshold, an output power of an RF signal coupled to the chamber may be adjusted. Such adjustment may mitigate formation of the anomalous plasma event occurring within the chamber.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass through the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: An apparatus for supporting a wafer during a plasma processing operation includes a pedestal configured to have bottom surface and a top surface and a column configured to support the pedestal at a central region of the bottom surface of the pedestal. An electrical insulating layer is disposed over the top surface of the pedestal. An electrically conductive layer is disposed over the top surface of the electrical insulating layer. At least three electrically conductive support structures are distributed on the electrically conductive layer. The at least three support structures are configured to interface with a bottom surface of a wafer to physically support the wafer and electrically connect to the wafer. An electrical connection extends from the electrically conductive layer to connect with a positive terminal of a direct current power supply at a location outside of the pedestal.

Abstract: A Chemical Vapor Deposition (CVD) tool that suppresses or altogether eliminates arcing between a substrate pedestal and substrate. The CVD tool includes a Direct Current (DC) bias control system arranged to maintain a substrate pedestal provided in a processing chamber at a same or substantially the same DC bias voltage as developed by a plasma in the processing chamber. By maintaining the substrate pedestal and the substrate having the same potential as the plasma at the same or substantially the same voltage potential, arcing is suppressed or altogether eliminated.