Patents by Inventor Yukio Yamauchi

Yukio Yamauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9876033
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: January 23, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Patent number: 9837451
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: December 5, 2017
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20170213853
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Application
    Filed: April 6, 2017
    Publication date: July 27, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei YAMAZAKI, Yukio YAMAUCHI, Hidehito KITAKADO
  • Patent number: 9659524
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: May 23, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 9620573
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: April 11, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Publication number: 20160197105
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Application
    Filed: March 17, 2016
    Publication date: July 7, 2016
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 9293483
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: March 22, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20150255524
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Application
    Filed: May 12, 2015
    Publication date: September 10, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Patent number: 9105523
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: August 11, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Publication number: 20150187822
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Application
    Filed: March 11, 2015
    Publication date: July 2, 2015
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Publication number: 20150138174
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: December 16, 2014
    Publication date: May 21, 2015
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 8994711
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: March 31, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 8941565
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: January 27, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20140347254
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: August 11, 2014
    Publication date: November 27, 2014
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 8830146
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: September 9, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20140209916
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Application
    Filed: March 31, 2014
    Publication date: July 31, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Patent number: 8686553
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: April 1, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Patent number: 8658481
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: February 25, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Publication number: 20140015872
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: September 19, 2013
    Publication date: January 16, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio YAMAUCHI, Takeshi FUKUNAGA
  • Patent number: 8558773
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: October 15, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga