Patents by Inventor Yumi Nakajima

Yumi Nakajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8187773
    Abstract: A method for generating data on mask pattern used to form a device pattern formed on a reflective exposure mask, wherein data on the mask pattern is generated based on a position correction amount table used to correct an amount of transfer position error occurring depending on at least one of pattern size and pattern pitch of the mask pattern when the mask pattern is transferred onto an exposure target member.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: May 29, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yumi Nakajima, Masaru Suzuki, Takashi Sato
  • Publication number: 20120068372
    Abstract: According to one embodiment, a nanoimprint template using a pattern transcription to a substrate by a nanoimprint technique, the template includes a transcription pattern and an alignment mark on a main surface of a main body, wherein the alignment mark comprises a polarizer.
    Type: Application
    Filed: September 15, 2011
    Publication date: March 22, 2012
    Inventors: Akiko Mimotogi, Ryoichi Inanami, Kentaro Kasa, Masato Suzuki, Manabu Takakuwa, Yohko Furutono, Yumi Nakajima
  • Publication number: 20120040293
    Abstract: A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.
    Type: Application
    Filed: October 27, 2011
    Publication date: February 16, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ryoichi Inanami, Yumi Nakajima, Masamitsu Itoh
  • Patent number: 8071263
    Abstract: A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: December 6, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ryoichi Inanami, Yumi Nakajima, Masamitsu Itoh
  • Publication number: 20110159440
    Abstract: In one embodiment, a method for cleaning a reticle stage of an extreme ultraviolet exposure apparatus is disclosed. The method can include pressing a particle catching layer of a cleaning reticle onto the reticle stage, and the cleaning reticle includes the particle catching layer formed on a substrate. The method can include peeling the cleaning reticle from the reticle stage. The method can include removing the particle catching layer from the substrate. I addition, the method can include forming a new particle catching layer on the substrate having the particle catching layer removed.
    Type: Application
    Filed: December 17, 2010
    Publication date: June 30, 2011
    Inventors: Yumi NAKAJIMA, Suigen Kyoh, Ryoichi Inanami
  • Publication number: 20110151357
    Abstract: According to one embodiment, a monitoring pattern is transferred to a wafer by irradiation with EUV light by using a reflective mask including the monitoring pattern. Then, the line width of the monitoring pattern transferred to the wafer is measured, and a flare intensity distribution to be generated on the wafer is calculated in accordance with the reflecting region area of the mask and the layout direction of the monitoring pattern. After that, the measured line width of the monitoring pattern is corrected based on the calculated flare intensity distribution. Finally, the exposure dose of the monitoring pattern on the wafer is obtained from the corrected line width.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 23, 2011
    Inventors: Yumi NAKAJIMA, Takashi Sato
  • Publication number: 20100055584
    Abstract: An exposure device according to an embodiment includes an exposure light source for irradiating a reflective mask with an exposure light, an alignment light source for irradiating the reflective mask with an alignment light and an optical element having a structure that a light path of the exposure light extending from the alignment light source to the reflective mask shares at least part in common with a light path of the alignment light extending from the alignment light source to the reflective mask.
    Type: Application
    Filed: August 26, 2009
    Publication date: March 4, 2010
    Inventors: Takashi SATO, Kazuya Fukuhara, Yumi Nakajima
  • Publication number: 20100021826
    Abstract: A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer.
    Type: Application
    Filed: June 24, 2009
    Publication date: January 28, 2010
    Inventors: Ryoichi INANAMI, Yumi NAKAJIMA, Masamitsu ITOH
  • Publication number: 20100003608
    Abstract: A method for generating data on mask pattern used to form a device pattern formed on a reflective exposure mask, wherein data on the mask pattern is generated based on a position correction amount table used to correct an amount of transfer position error occurring depending on at least one of pattern size and pattern pitch of the mask pattern when the mask pattern is transferred onto an exposure target member.
    Type: Application
    Filed: June 29, 2009
    Publication date: January 7, 2010
    Inventors: Yumi Nakajima, Masaru Suzuki, Takashi Sato
  • Publication number: 20090095711
    Abstract: A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.
    Type: Application
    Filed: September 25, 2008
    Publication date: April 16, 2009
    Inventors: Takeshi Koshiba, Yumi Nakajima, Tetsuro Nakasugi, Kazuo Tawarayama, Ikuo Yoneda, Hiroyuki Mizuno