Abstract: A device is disclosed that includes a cell block, at least one first metal interconnect, and second metal interconnects. The cell block includes a pin disposed at a Nth metal layer in a cell layout. The at least one first metal interconnect is disposed at a (N+1)th metal layer above the Nth metal layer and stacked over the pin, and electrically coupled to the pin. The second interconnects are disposed at a (N+2)th metal layer and stacked over the at least one first metal interconnect, and parallel to each other. The second metal interconnects are electrically coupled to the at least one first metal interconnect, and forming an equivalent tapping point of the pin of the cell block. The equivalent tapping point and the pin are vertically overlapped with each other, and fabrication of the device is initiated after a DRC or a SEM simulation test is passed.

Abstract: A first layer of anisotropic material extends along a first plane and includes anisotropic components being parallel to a second plane non-parallel and non-perpendicular to the first plane. The anisotropic components are arranged in cycloidal or helical patterns. The cycloidal or helical patterns define one or more Bragg planes that are non-parallel and non-perpendicular to the first plane and either substantially parallel or substantially perpendicular to the second plane.

Abstract: An optical system includes a grating including at least one substrate and a grating structure coupled to the at least one substrate. The grating structure is configured to diffract a first light having an incidence angle within a predetermined range. The optical system also includes a polarizer configured to transmit the first light diffracted by the grating structure and block a second light reflected by a surface of the at least one substrate.

Abstract: Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation and modeling of function safety and fault management of an electronic device. A method for simulating a safety circuit includes providing an electronic architectural design to perform one or more functional behaviors of the electronic device in accordance with an electronic design specification. The method further includes modeling the safety circuit of the electronic architectural design and one or more other electronic circuits of the electronic architectural design that communicate with the safety circuit. The method further includes simulating, using the modeling, operation of the safety circuit while the electronic architectural design is performing the one or more functional behaviors. The method also includes determining whether the simulated operation of the safety circuit satisfies the electronic design specification.

Abstract: Methods and systems for determining a systematic defect in a circuit under test is provided. Elements of the circuit under test converted into scan cells. A first scan chain that includes a first plurality of scan cells is formed. Each scan cell of the first plurality of scan cells of the first scan chain are of a first cell type. The first scan chain contains a first scan input and a first scan output. A first test pattern is applied at the scan input and a first test output is collected for the applied first test pattern at the first scan output. The collected first test output is compared with a first expected test output. The first cell type is marked to be a suspect for a systematic defect when the first test output is different from the first expected test output.

Abstract: An optical system includes a grating including at least one substrate and a grating structure coupled to the at least one substrate. The grating structure is configured to diffract a first light having an incidence angle within a predetermined range. The optical system also includes a polarizer configured to transmit the first light diffracted by the grating structure and block a second light reflected by a surface of the at least one substrate.

Abstract: Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation of various loads on one or more batteries of an electronic device resulting from the electronic device performing one or more functional behaviors. Before this electronic simulation occurs, the electronic device is modeled using the high-level software language or the high-level software format. For example, a battery discharge model, a regulator efficiency model, a power delivery network (PDN) model, or a component power model are used to model behaviors of the one or more batteries, regulator circuitry, power delivery network (PDN) circuitry, and other electronic circuits, respectively, of the electronic device.

Abstract: A method includes receiving a source code for executing a plurality of operations associated with a machine learning algorithm, classifying each operation into a fast operation group or a slow operation group, defining a neuron network for executing operations of the slow operation group, and mapping the neuron network to an initial machine learning hardware configuration. The method also includes executing operations of the slow operation group on the initial machine learning hardware configuration, modifying the initial machine learning hardware configuration in response to a determination that the slow group operation fails to produce an expected result in response to at least one set of inputs; and executing a fast group operation using a machine learning software code.

Abstract: A package includes an Integrated Voltage Regulator (IVR) die, wherein the IVR die includes metal pillars at a top surface of the first IVR die. The package further includes a first encapsulating material encapsulating the first IVR die therein, wherein the first encapsulating material has a top surface coplanar with top surfaces of the metal pillars. A plurality of redistribution lines is over the first encapsulating material and the IVR die. The plurality of redistribution lines is electrically coupled to the metal pillars. A core chip overlaps and is bonded to the plurality of redistribution lines. A second encapsulating material encapsulates the core chip therein, wherein edges of the first encapsulating material and respective edges of the second encapsulating material are vertically aligned to each other. An interposer or a package substrate is underlying and bonded to the IVR die.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A method includes receiving a source code for executing a plurality of operations associated with a machine learning algorithm, classifying each operation into a fast operation group or a slow operation group, defining a neuron network for executing operations of the slow operation group, and mapping the neuron network to an initial machine learning hardware configuration. The method also includes executing operations of the slow operation group on the initial machine learning hardware configuration, modifying the initial machine learning hardware configuration in response to a determination that the slow group operation fails to produce an expected result in response to at least one set of inputs; and executing a fast group operation using a machine learning software code.

Abstract: The present disclosure relates to an integrated antenna structure. The integrated antenna structure includes a radiator and a ground plane disposed between a semiconductor substrate and the radiator. A conductive structure is separated from the ground plane by the semiconductor substrate. The conductive structure is electrically coupled to the ground plane. The semiconductor substrate has a thickness of less than approximately 100 microns.

Abstract: Methods of a scan partitioning a circuit are disclosed. One method includes calculating a power score for circuit cells within a circuit design based on physical cell parameters of the circuit cells. For each of the circuit cells, the circuit cell is assigned to a scan group according to the power score for the circuit cell and a total power score for each scan group. A plurality of scan chains is formed. Each of the scan chains is formed from the circuit cells in a corresponding scan group based at least in part on placement data within the circuit design for each of the circuit cells. Interconnect power consumption can be assessed to determine routing among circuit cells in the scan chains.

Abstract: A clock distribution circuit configured to output a clock signal includes a first circuit configured to use a reference clock signal to provide first and second reference signals, wherein the second reference signal indicates whether the first reference signal is locked with the reference clock signal; a second circuit configured to use the reference clock signal to provide an output signal and an indication signal indicative whether the output signal is locked with the reference clock signal; and a monitor circuit, coupled to the first and second circuits, and configured to use at least one of the first reference signal, the second reference signal, the output signal, and the indication signal to determine whether the second circuit is functioning correctly.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation and modeling of function safety and fault management of an electronic device. A method for simulating a safety circuit includes providing an electronic architectural design to perform one or more functional behaviors of the electronic device in accordance with an electronic design specification. The method further includes modeling the safety circuit of the electronic architectural design and one or more other electronic circuits of the electronic architectural design that communicate with the safety circuit. The method further includes simulating, using the modeling, operation of the safety circuit while the electronic architectural design is performing the one or more functional behaviors. The method also includes determining whether the simulated operation of the safety circuit satisfies the electronic design specification.

Abstract: A network-on-chip (NoC) system includes a default communication path between a master device and a slave device, and a backup communication path between the master device and the slave device. The default communication path is configured to work in a normal operation state of the chip. The backup communication path is configured to replace the default communication path when a fault arises in the default communication path.

Abstract: Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs.

Abstract: An integrated circuit includes a first through fourth devices positioned over a substrate, the first device including first through third transceivers, the second device including a fourth transceiver, the third device including a fifth transceiver, and the fourth device including a sixth transceiver. A first radio frequency interconnect (RFI) includes the first transceiver coupled to the fourth transceiver through a first guided transmission medium, a second RFI includes the second transceiver coupled to the fifth transceiver through a second guided transmission medium, and a third RFI includes the third transceiver coupled to the sixth transceiver by the second guided transmission medium.

Abstract: A package includes an Integrated Voltage Regulator (IVR) die, wherein the IVR die includes metal pillars at a top surface of the first IVR die. The package further includes a first encapsulating material encapsulating the first IVR die therein, wherein the first encapsulating material has a top surface coplanar with top surfaces of the metal pillars. A plurality of redistribution lines is over the first encapsulating material and the IVR die. The plurality of redistribution lines is electrically coupled to the metal pillars. A core chip overlaps and is bonded to the plurality of redistribution lines. A second encapsulating material encapsulates the core chip therein, wherein edges of the first encapsulating material and respective edges of the second encapsulating material are vertically aligned to each other. An interposer or a package substrate is underlying and bonded to the IVR die.